FR2738984B1 - Procede et dispositif de mesure d'un flux d'ions dans un plasma - Google Patents

Procede et dispositif de mesure d'un flux d'ions dans un plasma

Info

Publication number
FR2738984B1
FR2738984B1 FR9511181A FR9511181A FR2738984B1 FR 2738984 B1 FR2738984 B1 FR 2738984B1 FR 9511181 A FR9511181 A FR 9511181A FR 9511181 A FR9511181 A FR 9511181A FR 2738984 B1 FR2738984 B1 FR 2738984B1
Authority
FR
France
Prior art keywords
plasma
measuring
ion flow
ion
flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9511181A
Other languages
English (en)
Other versions
FR2738984A1 (fr
Inventor
Jean Paul Booth
Nicholas St John Braithwaite
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR9511181A priority Critical patent/FR2738984B1/fr
Priority to PCT/FR1996/001451 priority patent/WO1997011587A1/fr
Priority to JP51243797A priority patent/JP3937453B2/ja
Priority to US08/836,036 priority patent/US5936413A/en
Priority to DE69605643T priority patent/DE69605643T2/de
Priority to EP96931869A priority patent/EP0792571B1/fr
Publication of FR2738984A1 publication Critical patent/FR2738984A1/fr
Application granted granted Critical
Publication of FR2738984B1 publication Critical patent/FR2738984B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0081—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by electric means
FR9511181A 1995-09-19 1995-09-19 Procede et dispositif de mesure d'un flux d'ions dans un plasma Expired - Lifetime FR2738984B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR9511181A FR2738984B1 (fr) 1995-09-19 1995-09-19 Procede et dispositif de mesure d'un flux d'ions dans un plasma
PCT/FR1996/001451 WO1997011587A1 (fr) 1995-09-19 1996-09-18 Procede et dispositif de mesure d'un flux d'ions dans un plasma
JP51243797A JP3937453B2 (ja) 1995-09-19 1996-09-18 プラズマ中のイオン流の測定方法及び装置
US08/836,036 US5936413A (en) 1995-09-19 1996-09-18 Method and device for measuring an ion flow in a plasma
DE69605643T DE69605643T2 (de) 1995-09-19 1996-09-18 Verfahren und vorrichtung zur messung eines zonenflusses in einem plasma
EP96931869A EP0792571B1 (fr) 1995-09-19 1996-09-18 Procede et dispositif de mesure d'un flux d'ions dans un plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9511181A FR2738984B1 (fr) 1995-09-19 1995-09-19 Procede et dispositif de mesure d'un flux d'ions dans un plasma

Publications (2)

Publication Number Publication Date
FR2738984A1 FR2738984A1 (fr) 1997-03-21
FR2738984B1 true FR2738984B1 (fr) 1997-11-21

Family

ID=9482863

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9511181A Expired - Lifetime FR2738984B1 (fr) 1995-09-19 1995-09-19 Procede et dispositif de mesure d'un flux d'ions dans un plasma

Country Status (6)

Country Link
US (1) US5936413A (fr)
EP (1) EP0792571B1 (fr)
JP (1) JP3937453B2 (fr)
DE (1) DE69605643T2 (fr)
FR (1) FR2738984B1 (fr)
WO (1) WO1997011587A1 (fr)

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US6646386B1 (en) 1999-07-20 2003-11-11 Tokyo Electron Limited Stabilized oscillator circuit for plasma density measurement
US6741944B1 (en) * 1999-07-20 2004-05-25 Tokyo Electron Limited Electron density measurement and plasma process control system using a microwave oscillator locked to an open resonator containing the plasma
TW484015B (en) * 1999-07-21 2002-04-21 Tokyo Electron Ltd Electron density measurement and plasma process control system using changes in the resonant frequency of an open resonator containing the plasma
US6861844B1 (en) 1999-07-21 2005-03-01 Tokyo Electron Limited Electron density measurement and plasma process control system using changes in the resonant frequency of an open resonator containing the plasma
JP2001203097A (ja) * 2000-01-17 2001-07-27 Canon Inc プラズマ密度計測装置および方法並びにこれを利用したプラズマ処理装置および方法
JP4633881B2 (ja) * 2000-02-21 2011-02-16 株式会社日立製作所 プラズマ処理装置及びそれを用いた処理方法
US6653852B1 (en) 2000-03-31 2003-11-25 Lam Research Corporation Wafer integrated plasma probe assembly array
JP3670206B2 (ja) * 2000-11-06 2005-07-13 アルプス電気株式会社 プラズマ処理装置又はプラズマ処理システムの性能評価方法、保守方法、性能管理システム、及び性能確認システム、並びにプラズマ処理装置
JP4455887B2 (ja) * 2002-03-28 2010-04-21 東京エレクトロン株式会社 電気的特性を利用して、プラズマ反応炉内の膜の状態を判断するシステムおよび方法
JP3773189B2 (ja) * 2002-04-24 2006-05-10 独立行政法人科学技術振興機構 窓型プローブ、プラズマ監視装置、及び、プラズマ処理装置
US6894474B2 (en) 2002-06-07 2005-05-17 Applied Materials, Inc. Non-intrusive plasma probe
US6972582B2 (en) * 2003-02-10 2005-12-06 Solid State Measurements, Inc. Apparatus and method for measuring semiconductor wafer electrical properties
US6902646B2 (en) * 2003-08-14 2005-06-07 Advanced Energy Industries, Inc. Sensor array for measuring plasma characteristics in plasma processing environments
US20050284570A1 (en) * 2004-06-24 2005-12-29 Doran Daniel B Diagnostic plasma measurement device having patterned sensors and features
US20060043063A1 (en) * 2004-09-02 2006-03-02 Mahoney Leonard J Electrically floating diagnostic plasma probe with ion property sensors
US7578301B2 (en) 2005-03-28 2009-08-25 Lam Research Corporation Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system
US7319316B2 (en) 2005-06-29 2008-01-15 Lam Research Corporation Apparatus for measuring a set of electrical characteristics in a plasma
US7479207B2 (en) 2006-03-15 2009-01-20 Lam Research Corporation Adjustable height PIF probe
DE102006014106B3 (de) * 2006-03-24 2007-08-30 RUHR-UNIVERSITäT BOCHUM Vorrichtung und Verfahren zur Messung der Dichte eines Plasmas
US7413672B1 (en) * 2006-04-04 2008-08-19 Lam Research Corporation Controlling plasma processing using parameters derived through the use of a planar ion flux probing arrangement
US7829468B2 (en) * 2006-06-07 2010-11-09 Lam Research Corporation Method and apparatus to detect fault conditions of plasma processing reactor
EP2114112B1 (fr) * 2008-04-29 2015-09-23 Plasmetrex GmbH Appareil pour procédés industriels au plasma
US8849585B2 (en) * 2008-06-26 2014-09-30 Lam Research Corporation Methods for automatically characterizing a plasma
CN102084475B (zh) * 2008-07-07 2013-01-30 朗姆研究公司 用于等离子体处理室中的包括真空间隙的面向等离子体的探针装置
CN102714167B (zh) * 2008-07-07 2015-04-22 朗姆研究公司 用于检测等离子处理室内的原位电弧放电事件的被动电容耦合静电(cce)探针装置
TWI458850B (zh) * 2008-07-07 2014-11-01 Lam Res Corp 用來鑑定電漿處理腔室中之薄膜之特性的射頻偏壓電容耦合靜電探針裝置
KR20110039239A (ko) * 2008-07-07 2011-04-15 램 리써치 코포레이션 플라즈마 처리 챔버에서의 스트라이크 단계를 검출하기 위한 용량 결합형 정전 (ｃｃｅ) 프로브 장치 및 그 방법
JP5734185B2 (ja) 2008-07-07 2015-06-17 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ処理チャンバ内のプラズマ不安定性事象を検出するための構成、及び、プラズマ不安定性事象を検出する方法
CN102084474B (zh) * 2008-07-07 2012-11-14 朗姆研究公司 在等离子体处理室中检测去夹紧的电容耦合静电(cce)探针装置及其方法
IES20090733A2 (en) * 2009-09-22 2011-03-30 Donal O'sullivan Sensor for measuring plasma parameters
US20120197570A1 (en) * 2011-01-27 2012-08-02 Mehran Ramezani Measurement of Parameters Within an Integrated Circuit Chip Using a Nano-Probe
US20120283973A1 (en) 2011-05-05 2012-11-08 Imec Plasma probe and method for plasma diagnostics
US9404183B2 (en) 2012-06-08 2016-08-02 Novellus Systems, Inc. Diagnostic and control systems and methods for substrate processing systems using DC self-bias voltage
CN102928701A (zh) * 2012-10-24 2013-02-13 上海市电力公司 用于直流输电下离子流场分布特性测量的测量***
KR101999720B1 (ko) * 2012-11-20 2019-07-16 삼성디스플레이 주식회사 기판 정전기 검사 장치 및 기판 제조 방법
TWI635197B (zh) * 2013-06-10 2018-09-11 諾發系統有限公司 用於使用直流自偏壓之基板處理系統的診斷及控制系統與方法
DE102013110722A1 (de) * 2013-09-27 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Plasma-ionengestütztes Beschichtungsverfahren und Plasmasonde
WO2016177740A1 (fr) 2015-05-04 2016-11-10 ECOLE POLYTECHNIQUE FéDéRALE DE LAUSANNE Procédé et dispositif pour déterminer des caractéristiques de plasma
US11867643B2 (en) 2019-01-31 2024-01-09 Korea Research Institute Of Standards And Science Planar-type plasma diagnosis apparatus, wafer-type plasma diagnosis apparatus in which planar-type plasma diagnosis apparatus is buried, and electrostatic chuck in which planar-type plasma diagnosis apparatus is buried

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US2696584A (en) * 1948-06-02 1954-12-07 Kurt S Lion Electric circuit
US4006404A (en) * 1976-01-30 1977-02-01 The United States Of America As Represented By The Secretary Of The Navy Pulsed plasma probe
US4336532A (en) * 1980-05-22 1982-06-22 Radiation Engineering Inc. Integrated nuclear radiation detector and monitor
JPS60126832A (ja) * 1983-12-14 1985-07-06 Hitachi Ltd ドライエツチング方法および装置
SU1733975A1 (ru) * 1988-05-18 1992-05-15 Научно-производственное объединение им.С.А.Лавочкина Способ определени электронной температуры плазмы тлеющего разр да
US5339039A (en) * 1992-09-29 1994-08-16 Arizona Board Of Regents On Behalf Of The University Of Arizona Langmuir probe system for radio frequency excited plasma processing system
US5467013A (en) * 1993-12-07 1995-11-14 Sematech, Inc. Radio frequency monitor for semiconductor process control

Also Published As

Publication number Publication date
DE69605643T2 (de) 2000-04-06
JP3937453B2 (ja) 2007-06-27
EP0792571A1 (fr) 1997-09-03
DE69605643D1 (de) 2000-01-20
JPH10509557A (ja) 1998-09-14
US5936413A (en) 1999-08-10
WO1997011587A1 (fr) 1997-03-27
FR2738984A1 (fr) 1997-03-21
EP0792571B1 (fr) 1999-12-15

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