FR2708786B1 - Micro-usinage par faisceau ionique focalisé avec auto-masquage. - Google Patents

Micro-usinage par faisceau ionique focalisé avec auto-masquage.

Info

Publication number
FR2708786B1
FR2708786B1 FR9407913A FR9407913A FR2708786B1 FR 2708786 B1 FR2708786 B1 FR 2708786B1 FR 9407913 A FR9407913 A FR 9407913A FR 9407913 A FR9407913 A FR 9407913A FR 2708786 B1 FR2708786 B1 FR 2708786B1
Authority
FR
France
Prior art keywords
masking
machining
micro
self
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9407913A
Other languages
English (en)
Other versions
FR2708786A1 (fr
Inventor
Christopher Graham Talbot
Douglas Masnaghetti
Hongyu Ximen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schlumberger Technologies Inc
Original Assignee
Schlumberger Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schlumberger Technologies Inc filed Critical Schlumberger Technologies Inc
Publication of FR2708786A1 publication Critical patent/FR2708786A1/fr
Application granted granted Critical
Publication of FR2708786B1 publication Critical patent/FR2708786B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00—Electron-beam welding or cutting
    • B23K15/02—Control circuits therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electron Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
FR9407913A 1993-06-28 1994-06-28 Micro-usinage par faisceau ionique focalisé avec auto-masquage. Expired - Fee Related FR2708786B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8453293A 1993-06-28 1993-06-28

Publications (2)

Publication Number Publication Date
FR2708786A1 FR2708786A1 (fr) 1995-02-10
FR2708786B1 true FR2708786B1 (fr) 1996-08-09

Family

ID=22185548

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9407913A Expired - Fee Related FR2708786B1 (fr) 1993-06-28 1994-06-28 Micro-usinage par faisceau ionique focalisé avec auto-masquage.

Country Status (4)

Country Link
US (1) US5616921A (fr)
JP (2) JP2864347B2 (fr)
DE (1) DE4421517A1 (fr)
FR (1) FR2708786B1 (fr)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5825035A (en) * 1993-03-10 1998-10-20 Hitachi, Ltd. Processing method and apparatus using focused ion beam generating means
US5916424A (en) * 1996-04-19 1999-06-29 Micrion Corporation Thin film magnetic recording heads and systems and methods for manufacturing the same
JP3544438B2 (ja) * 1996-09-30 2004-07-21 セイコーインスツルメンツ株式会社 イオンビームによる加工装置
US5956565A (en) * 1996-11-14 1999-09-21 Matsushita Electronics Corporation Analysis apparatus and analysis methods for semiconductor devices
US5840630A (en) * 1996-12-20 1998-11-24 Schlumberger Technologies Inc. FBI etching enhanced with 1,2 di-iodo-ethane
JPH117608A (ja) 1997-04-25 1999-01-12 Fujitsu Ltd 磁気ヘッド及びその製造方法
US6332962B1 (en) 1997-06-13 2001-12-25 Micrion Corporation Thin-film magnetic recording head manufacture using selective imaging
CA2260440C (fr) * 1998-01-28 2007-08-28 Chipworks Inc. Systeme et methode automatiques d'imagerie par faisceau ionique focalise
EP1319733A3 (fr) * 1998-02-06 2003-07-23 Richardson Technologies Inc Procédé et système pour le dépôt d'objet tridimensionnel
ATE246269T1 (de) * 1998-02-06 2003-08-15 Richardson Technologies Inc Verfahren zum abscheiden dreidimensionaler objekte
US6031229A (en) * 1998-05-20 2000-02-29 Schlumberger Technologies, Inc. Automatic sequencing of FIB operations
US6262430B1 (en) * 1998-07-30 2001-07-17 Advanced Micro Devices, Inc. Integrated system for frontside navigation and access of multi-layer integrated circuits
US6069079A (en) * 1998-09-04 2000-05-30 Advanced Micro Devices, Inc. Exposure of desired node in a multi-layer integrated circuit using FIB and RIE
US6268608B1 (en) * 1998-10-09 2001-07-31 Fei Company Method and apparatus for selective in-situ etching of inter dielectric layers
US7773340B2 (en) * 1999-02-23 2010-08-10 Advanced Research Corporation Patterned magnetic recording head having a gap pattern with substantially elliptical or substantially diamond-shaped termination pattern
US20030093894A1 (en) * 1999-02-23 2003-05-22 Dugas Matthew P. Double layer patterning and technique for making a magnetic recording head
US6269533B2 (en) * 1999-02-23 2001-08-07 Advanced Research Corporation Method of making a patterned magnetic recording head
US6496328B1 (en) * 1999-12-30 2002-12-17 Advanced Research Corporation Low inductance, ferrite sub-gap substrate structure for surface film magnetic recording heads
FR2805925B1 (fr) * 2000-03-01 2004-10-22 X Ion Procede de controle de l'uniformite de traitement d'une surface par un faisceau de particules et equipement de mise en oeuvre
US6751516B1 (en) 2000-08-10 2004-06-15 Richardson Technologies, Inc. Method and system for direct writing, editing and transmitting a three dimensional part and imaging systems therefor
WO2002025692A1 (fr) * 2000-09-20 2002-03-28 Fei Company Controle en temps reel permettant a la fois l'imagerie et l'exposition dans des systemes a faisceau de particule chargee
US6621081B2 (en) 2001-01-10 2003-09-16 International Business Machines Corporation Method of pole tip sample preparation using FIB
US6514866B2 (en) * 2001-01-12 2003-02-04 North Carolina State University Chemically enhanced focused ion beam micro-machining of copper
EP1423870A2 (fr) 2001-08-27 2004-06-02 Nptest, Inc. Procede de micro-usinage du cuivre par faisceau de particules chargees
US6670610B2 (en) * 2001-11-26 2003-12-30 Applied Materials, Inc. System and method for directing a miller
US20050103272A1 (en) 2002-02-25 2005-05-19 Leo Elektronenmikroskopie Gmbh Material processing system and method
DE10208043B4 (de) * 2002-02-25 2011-01-13 Carl Zeiss Nts Gmbh Materialbearbeitungssystem und Materialbearbeitungsverfahren
US7029595B1 (en) * 2002-08-21 2006-04-18 Advanced Micro Devices, Inc. Selective etch for uniform metal trace exposure and milling using focused ion beam system
US6958248B1 (en) * 2003-02-28 2005-10-25 Credence Systems Corporation Method and apparatus for the improvement of material/voltage contrast
US7060196B2 (en) * 2003-10-03 2006-06-13 Credence Systems Corporation FIB milling of copper over organic dielectrics
US8144424B2 (en) 2003-12-19 2012-03-27 Dugas Matthew P Timing-based servo verify head and magnetic media made therewith
US7283317B2 (en) * 2004-01-30 2007-10-16 Advanced Research Corporation Apparatuses and methods for pre-erasing during manufacture of magnetic tape
US20100321824A1 (en) * 2004-02-18 2010-12-23 Dugas Matthew P Magnetic recording head having secondary sub-gaps
US7049157B2 (en) * 2004-03-11 2006-05-23 Taiwan Semiconductor Manufacturing Co., Ltd. Calibration standard for critical dimension verification of sub-tenth micron integrated circuit technology
WO2005109405A1 (fr) * 2004-05-04 2005-11-17 Advanced Research Corporation Structure integree a film mince comportant des ecartements auxiliaires et des poles auxiliaires pour formation d’un motif arbitraire des ecartements entre les contacts, tetes d’enregistrement magnétique et procede de fabrication de ces elements
US7115426B2 (en) * 2004-08-05 2006-10-03 Credence Systems Corporation Method and apparatus for addressing thickness variations of a trench floor formed in a semiconductor substrate
JP4664041B2 (ja) * 2004-10-27 2011-04-06 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置及び試料作製方法
GB2434248B (en) * 2006-01-12 2010-04-14 Zeiss Carl Smt Ltd Charged particle beam device
US7535000B2 (en) * 2006-05-23 2009-05-19 Dcg Systems, Inc. Method and system for identifying events in FIB
DE102006043895B9 (de) * 2006-09-19 2012-02-09 Carl Zeiss Nts Gmbh Elektronenmikroskop zum Inspizieren und Bearbeiten eines Objekts mit miniaturisierten Strukturen
DE102007054073A1 (de) * 2007-11-13 2009-05-14 Carl Zeiss Nts Gmbh System und Verfahren zum Bearbeiten eines Objekts
WO2009094516A1 (fr) * 2008-01-23 2009-07-30 Advanced Research Corporation Têtes d'enregistrement comprenant des guides de bande intégrés et supports magnétiques constitués de telles têtes d'enregistrement
US20090227095A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Counterdoping for solar cells
US8068302B2 (en) * 2008-03-28 2011-11-29 Advanced Research Corporation Method of formatting magnetic media using a thin film planar arbitrary gap pattern magnetic head
EP2124244B1 (fr) * 2008-05-21 2011-08-03 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Outil de mesure à précision très élevée avec boucle de contrôle
JP2010025848A (ja) * 2008-07-23 2010-02-04 Sumitomo Electric Ind Ltd 断面観察方法
EP2367195B1 (fr) * 2008-10-31 2014-03-12 FEI Company Mesure d'épaisseur d'échantillon et détermination de fin de procédé
US8536526B2 (en) * 2008-12-29 2013-09-17 International Business Machines Corporation Methods of operating a nanoprober to electrically probe a device structure of an integrated circuit
US8767331B2 (en) * 2009-07-31 2014-07-01 Advanced Research Corporation Erase drive system and methods of erasure for tape data cartridge
JP5409685B2 (ja) * 2011-03-31 2014-02-05 株式会社日立ハイテクノロジーズ イオンビーム装置および加工方法
GB201308436D0 (en) * 2013-05-10 2013-06-19 Oxford Instr Nanotechnology Tools Ltd Metrology for preparation of thin samples
JP6210493B2 (ja) * 2014-03-14 2017-10-11 日本電子株式会社 荷電粒子ビーム照射装置及び荷電粒子ビーム照射方法
KR102301793B1 (ko) * 2014-12-18 2021-09-14 삼성전자주식회사 이미지 생성 방법 및 이를 수행하기 위한 이미징 시스템
US20220122805A1 (en) * 2019-01-22 2022-04-21 Techinsights Inc. Ion beam delayering system and method, and endpoint monitoring system and method therefor
US11440151B2 (en) 2019-06-07 2022-09-13 Applied Materials Israel Ltd. Milling a multi-layered object
US10971618B2 (en) 2019-08-02 2021-04-06 Applied Materials Israel Ltd. Generating milled structural elements with a flat upper surface
US11276557B2 (en) 2019-09-17 2022-03-15 Applied Materials Israel Ltd. Forming a vertical surface
US11315754B2 (en) * 2020-04-27 2022-04-26 Applied Materials Israel Ltd. Adaptive geometry for optimal focused ion beam etching
US11636997B2 (en) * 2020-07-01 2023-04-25 Applied Materials Israel Ltd. Uniform milling of adjacent materials using parallel scanning fib

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS532599B2 (fr) * 1972-10-30 1978-01-30
US3787720A (en) * 1973-03-28 1974-01-22 Hughes Aircraft Co Semiconductor vidicon and process for fabricating same
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法
EP0199585B1 (fr) * 1985-04-23 1990-07-04 Seiko Instruments Inc. Appareil pour le dépôt d'un matériau électriquement conducteur et/ou isolant sur un substrat
AT386297B (de) * 1985-09-11 1988-07-25 Ims Ionen Mikrofab Syst Ionenstrahlgeraet und verfahren zur ausfuehrung von aenderungen, insbes. reparaturen an substraten unter verwendung eines ionenstrahlgeraetes
US4717681A (en) * 1986-05-19 1988-01-05 Texas Instruments Incorporated Method of making a heterojunction bipolar transistor with SIPOS
US4961178A (en) * 1986-10-21 1990-10-02 Matsushita Electric Industrial Co., Ltd. Method of erasable recording and reading of information
US5035787A (en) * 1987-07-22 1991-07-30 Microbeam, Inc. Method for repairing semiconductor masks and reticles
JPH01154064A (ja) * 1987-12-10 1989-06-16 Fujitsu Ltd 微細パターンの形成方法
JP2569139B2 (ja) * 1988-08-24 1997-01-08 株式会社日立製作所 イオンビーム加工方法
JPH0262039A (ja) * 1988-08-29 1990-03-01 Hitachi Ltd 多層素子の微細加工方法およびその装置
US5140164A (en) * 1991-01-14 1992-08-18 Schlumberger Technologies, Inc. Ic modification with focused ion beam system
US5439763A (en) * 1991-03-19 1995-08-08 Hitachi, Ltd. Optical mask and method of correcting the same

Also Published As

Publication number Publication date
FR2708786A1 (fr) 1995-02-10
JP2864347B2 (ja) 1999-03-03
JPH10321180A (ja) 1998-12-04
US5616921A (en) 1997-04-01
DE4421517A1 (de) 1995-01-05
JPH07176287A (ja) 1995-07-14

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Legal Events

Date Code Title Description
RN Application for restoration
FC Decision of inpi director general to approve request for restoration
ST Notification of lapse
TP Transmission of property
CA Change of address
CD Change of name or company name
TP Transmission of property