FR2706080B1 - Transistor bipolaire à hétérojonction à sous-collecteur/collecteur enterré. - Google Patents

Transistor bipolaire à hétérojonction à sous-collecteur/collecteur enterré.

Info

Publication number
FR2706080B1
FR2706080B1 FR9306737A FR9306737A FR2706080B1 FR 2706080 B1 FR2706080 B1 FR 2706080B1 FR 9306737 A FR9306737 A FR 9306737A FR 9306737 A FR9306737 A FR 9306737A FR 2706080 B1 FR2706080 B1 FR 2706080B1
Authority
FR
France
Prior art keywords
collector
sub
heterojunction transistor
buried
bipolar heterojunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9306737A
Other languages
English (en)
Other versions
FR2706080A1 (fr
Inventor
Garcia Jean-Charles
Blanck Herve
Maurel Philippe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR9306737A priority Critical patent/FR2706080B1/fr
Publication of FR2706080A1 publication Critical patent/FR2706080A1/fr
Application granted granted Critical
Publication of FR2706080B1 publication Critical patent/FR2706080B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234Bipolar junction transistors [BJT]
    • H01L29/6631Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318Heterojunction transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/737Hetero-junction transistors
    • H01L29/7371Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
FR9306737A 1993-06-04 1993-06-04 Transistor bipolaire à hétérojonction à sous-collecteur/collecteur enterré. Expired - Fee Related FR2706080B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9306737A FR2706080B1 (fr) 1993-06-04 1993-06-04 Transistor bipolaire à hétérojonction à sous-collecteur/collecteur enterré.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9306737A FR2706080B1 (fr) 1993-06-04 1993-06-04 Transistor bipolaire à hétérojonction à sous-collecteur/collecteur enterré.

Publications (2)

Publication Number Publication Date
FR2706080A1 FR2706080A1 (fr) 1994-12-09
FR2706080B1 true FR2706080B1 (fr) 1995-07-21

Family

ID=9447786

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9306737A Expired - Fee Related FR2706080B1 (fr) 1993-06-04 1993-06-04 Transistor bipolaire à hétérojonction à sous-collecteur/collecteur enterré.

Country Status (1)

Country Link
FR (1) FR2706080B1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4380774A (en) * 1980-12-19 1983-04-19 The United States Of America As Represented By The Secretary Of The Navy High-performance bipolar microwave transistor
DE3679618D1 (de) * 1985-08-26 1991-07-11 Matsushita Electric Ind Co Ltd Halbleiterbauelement mit einem abrupten uebergang und verfahren zu seiner herstellung mittels epitaxie.
EP0300803B1 (fr) * 1987-07-24 1994-06-22 Matsushita Electric Industrial Co., Ltd. Transistor bipolaire à haute fréquence et son procédé de fabrication
DE4000599A1 (de) * 1990-01-11 1991-07-18 Standard Elektrik Lorenz Ag Heterobipolar-transistor mit reduzierter basis-kollektor-kapazitaet

Also Published As

Publication number Publication date
FR2706080A1 (fr) 1994-12-09

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Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse