FR2706080B1 - Transistor bipolaire à hétérojonction à sous-collecteur/collecteur enterré. - Google Patents
Transistor bipolaire à hétérojonction à sous-collecteur/collecteur enterré.Info
- Publication number
- FR2706080B1 FR2706080B1 FR9306737A FR9306737A FR2706080B1 FR 2706080 B1 FR2706080 B1 FR 2706080B1 FR 9306737 A FR9306737 A FR 9306737A FR 9306737 A FR9306737 A FR 9306737A FR 2706080 B1 FR2706080 B1 FR 2706080B1
- Authority
- FR
- France
- Prior art keywords
- collector
- sub
- heterojunction transistor
- buried
- bipolar heterojunction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
- H01L29/66318—Heterojunction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9306737A FR2706080B1 (fr) | 1993-06-04 | 1993-06-04 | Transistor bipolaire à hétérojonction à sous-collecteur/collecteur enterré. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9306737A FR2706080B1 (fr) | 1993-06-04 | 1993-06-04 | Transistor bipolaire à hétérojonction à sous-collecteur/collecteur enterré. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2706080A1 FR2706080A1 (fr) | 1994-12-09 |
FR2706080B1 true FR2706080B1 (fr) | 1995-07-21 |
Family
ID=9447786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9306737A Expired - Fee Related FR2706080B1 (fr) | 1993-06-04 | 1993-06-04 | Transistor bipolaire à hétérojonction à sous-collecteur/collecteur enterré. |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2706080B1 (fr) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4380774A (en) * | 1980-12-19 | 1983-04-19 | The United States Of America As Represented By The Secretary Of The Navy | High-performance bipolar microwave transistor |
DE3679618D1 (de) * | 1985-08-26 | 1991-07-11 | Matsushita Electric Ind Co Ltd | Halbleiterbauelement mit einem abrupten uebergang und verfahren zu seiner herstellung mittels epitaxie. |
EP0300803B1 (fr) * | 1987-07-24 | 1994-06-22 | Matsushita Electric Industrial Co., Ltd. | Transistor bipolaire à haute fréquence et son procédé de fabrication |
DE4000599A1 (de) * | 1990-01-11 | 1991-07-18 | Standard Elektrik Lorenz Ag | Heterobipolar-transistor mit reduzierter basis-kollektor-kapazitaet |
-
1993
- 1993-06-04 FR FR9306737A patent/FR2706080B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2706080A1 (fr) | 1994-12-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
ST | Notification of lapse |