FR2665300B1 - Procede de fabrication d'un transistor a couche mince. - Google Patents
Procede de fabrication d'un transistor a couche mince.Info
- Publication number
- FR2665300B1 FR2665300B1 FR9100807A FR9100807A FR2665300B1 FR 2665300 B1 FR2665300 B1 FR 2665300B1 FR 9100807 A FR9100807 A FR 9100807A FR 9100807 A FR9100807 A FR 9100807A FR 2665300 B1 FR2665300 B1 FR 2665300B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- thin film
- film transistor
- transistor
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900011417A KR930001901B1 (ko) | 1990-07-27 | 1990-07-27 | 박막 트랜지스터의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2665300A1 FR2665300A1 (fr) | 1992-01-31 |
FR2665300B1 true FR2665300B1 (fr) | 1997-09-05 |
Family
ID=19301689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9100807A Expired - Fee Related FR2665300B1 (fr) | 1990-07-27 | 1991-01-24 | Procede de fabrication d'un transistor a couche mince. |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2505662B2 (fr) |
KR (1) | KR930001901B1 (fr) |
FR (1) | FR2665300B1 (fr) |
NL (1) | NL9100051A (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05335336A (ja) * | 1992-06-02 | 1993-12-17 | Nec Corp | 薄膜トランジスタの製造方法 |
TW406317B (en) * | 1997-06-27 | 2000-09-21 | Siemens Ag | Method to produce a barrier-layer in a semiconductor-body and semiconductor component with such a barrier-layer |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2044994B (en) * | 1979-03-22 | 1983-06-15 | Philips Electronic Associated | Thin film transistors |
JPS59124162A (ja) * | 1982-12-29 | 1984-07-18 | Sharp Corp | 薄膜トランジスタ |
JPS60183770A (ja) * | 1984-03-01 | 1985-09-19 | Asahi Glass Co Ltd | 薄膜トランジスタ |
JPS60211982A (ja) * | 1984-04-06 | 1985-10-24 | Hitachi Ltd | 薄膜トランジスタ |
JPS6281057A (ja) * | 1985-10-04 | 1987-04-14 | Hosiden Electronics Co Ltd | 透明導電膜 |
-
1990
- 1990-07-27 KR KR1019900011417A patent/KR930001901B1/ko not_active IP Right Cessation
-
1991
- 1991-01-11 NL NL9100051A patent/NL9100051A/nl active Search and Examination
- 1991-01-24 FR FR9100807A patent/FR2665300B1/fr not_active Expired - Fee Related
- 1991-07-15 JP JP3174186A patent/JP2505662B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH04233738A (ja) | 1992-08-21 |
KR930001901B1 (ko) | 1993-03-19 |
FR2665300A1 (fr) | 1992-01-31 |
KR920003534A (ko) | 1992-02-29 |
NL9100051A (nl) | 1992-02-17 |
JP2505662B2 (ja) | 1996-06-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CA | Change of address | ||
CD | Change of name or company name | ||
ST | Notification of lapse |