FR2618221B1 - Detecteur d'onde electromagnetique et analyseur d'image comportant un tel detecteur. - Google Patents

Detecteur d'onde electromagnetique et analyseur d'image comportant un tel detecteur.

Info

Publication number
FR2618221B1
FR2618221B1 FR8710121A FR8710121A FR2618221B1 FR 2618221 B1 FR2618221 B1 FR 2618221B1 FR 8710121 A FR8710121 A FR 8710121A FR 8710121 A FR8710121 A FR 8710121A FR 2618221 B1 FR2618221 B1 FR 2618221B1
Authority
FR
France
Prior art keywords
detector
electromagnetic wave
image analyzer
wave detector
analyzer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8710121A
Other languages
English (en)
Other versions
FR2618221A1 (fr
Inventor
Dominique Delacourt
Michel Papuchon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8710121A priority Critical patent/FR2618221B1/fr
Priority to DE8888401727T priority patent/DE3873853T2/de
Priority to EP88401727A priority patent/EP0299841B1/fr
Publication of FR2618221A1 publication Critical patent/FR2618221A1/fr
Application granted granted Critical
Publication of FR2618221B1 publication Critical patent/FR2618221B1/fr
Priority to US07/764,096 priority patent/US5160991A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
FR8710121A 1987-07-17 1987-07-17 Detecteur d'onde electromagnetique et analyseur d'image comportant un tel detecteur. Expired - Lifetime FR2618221B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR8710121A FR2618221B1 (fr) 1987-07-17 1987-07-17 Detecteur d'onde electromagnetique et analyseur d'image comportant un tel detecteur.
DE8888401727T DE3873853T2 (de) 1987-07-17 1988-07-04 Detektor von elektromagnetischen wellen und diesen detektor anwendender bildanalysator.
EP88401727A EP0299841B1 (fr) 1987-07-17 1988-07-04 Détecteur d'onde électromagnétique, et analyseur d'image comportant un tel détecteur
US07/764,096 US5160991A (en) 1987-07-17 1991-09-23 Electromagnetic wave detector and image analyzer comprising a detector of this type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8710121A FR2618221B1 (fr) 1987-07-17 1987-07-17 Detecteur d'onde electromagnetique et analyseur d'image comportant un tel detecteur.

Publications (2)

Publication Number Publication Date
FR2618221A1 FR2618221A1 (fr) 1989-01-20
FR2618221B1 true FR2618221B1 (fr) 1991-07-19

Family

ID=9353253

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8710121A Expired - Lifetime FR2618221B1 (fr) 1987-07-17 1987-07-17 Detecteur d'onde electromagnetique et analyseur d'image comportant un tel detecteur.

Country Status (4)

Country Link
US (1) US5160991A (fr)
EP (1) EP0299841B1 (fr)
DE (1) DE3873853T2 (fr)
FR (1) FR2618221B1 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2649536B1 (fr) * 1989-07-04 1994-07-22 Thomson Csf Detecteur d'ondes electromagnetiques
FR2671882B1 (fr) * 1989-12-28 1993-05-28 France Etat Dispositif de conversion d'un rayonnement infrarouge en un autre rayonnement d'energie superieure a celle de ce rayonnement infrarouge.
JP2937404B2 (ja) * 1990-04-18 1999-08-23 日本電気株式会社 半導体受光素子
JP3125332B2 (ja) * 1991-06-21 2001-01-15 ソニー株式会社 量子ドットトンネル素子とそれを用いた情報処理装置及び情報処理方法
FR2686456A1 (fr) * 1992-01-22 1993-07-23 Picogiga Sa Detecteur infrarouge a puits quantiques.
US5416338A (en) * 1992-02-29 1995-05-16 Nippondenso Co., Ltd. Semiconductor device with quantum well resonance states
US5789760A (en) * 1992-05-08 1998-08-04 The Furukawa Electric Co., Ltd. Multiquantum barrier Schottky junction device
US5406072A (en) * 1994-03-07 1995-04-11 The United States Of America As Represented By The Secretary Of The Air Force Method for microbeam ion radiation testing of photonic devices
US5510627A (en) * 1994-06-29 1996-04-23 The United States Of America As Represented By The Secretary Of The Navy Infrared-to-visible converter
FR2784185B1 (fr) 1998-10-06 2001-02-02 Thomson Csf Dispositif pour l'harmonisation entre une voie d'emission laser et une voie passive d'observation
FR2814281B1 (fr) * 2000-09-19 2003-08-29 Thomson Lcd Matrice active tft pour capteur optique comportant une couche semi-conductrice photosensible, et capteur optique comportant une telle matrice
US20020153487A1 (en) * 2001-04-18 2002-10-24 Hui Chun Liu Room temperature quantum well infrared detector
FR2825463B1 (fr) * 2001-05-30 2003-09-12 Thales Sa Gyrometre laser etat solide comportant un bloc resonateur
FR2830339B1 (fr) * 2001-10-02 2003-12-12 Thales Sa Dispositif optronique de veille passive
US7148843B2 (en) 2003-07-02 2006-12-12 Thales North America, Inc. Enhanced real time kinematics determination method and apparatus

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137264A (ja) * 1982-02-09 1983-08-15 Fuji Electric Corp Res & Dev Ltd 光電変換装置
DE3235076A1 (de) * 1982-09-22 1984-03-22 Siemens AG, 1000 Berlin und 8000 München Aufnahme- und auslesevorrichtung fuer roentgenstrahlen
US4597638A (en) * 1983-02-28 1986-07-01 At&T Bell Laboratories Nonlinear optical apparatus
JPS60785A (ja) * 1983-06-16 1985-01-05 Nippon Telegr & Teleph Corp <Ntt> 半導体光検出装置
EP0133342B1 (fr) * 1983-06-24 1989-11-29 Nec Corporation Structure de semi-conducteur avec supraréseau à haute densité de porteurs de charge
JPS6016474A (ja) * 1983-07-08 1985-01-28 Nec Corp ヘテロ多重接合型光検出器
US4620214A (en) * 1983-12-02 1986-10-28 California Institute Of Technology Multiple quantum-well infrared detector
US4882609A (en) * 1984-11-19 1989-11-21 Max-Planck Gesellschaft Zur Forderung Der Wissenschafter E.V. Semiconductor devices with at least one monoatomic layer of doping atoms
JPS61241985A (ja) * 1985-04-19 1986-10-28 Eizo Yamaga 赤外線検知装置
US4679061A (en) * 1985-06-14 1987-07-07 American Telephone And Telegraph Company, At&T Bell Laboratories Superlattice photoconductor
JPH0721594B2 (ja) * 1987-01-19 1995-03-08 国際電信電話株式会社 光スイツチ

Also Published As

Publication number Publication date
DE3873853T2 (de) 1993-02-25
FR2618221A1 (fr) 1989-01-20
EP0299841A3 (en) 1989-04-12
DE3873853D1 (de) 1992-09-24
EP0299841B1 (fr) 1992-08-19
US5160991A (en) 1992-11-03
EP0299841A2 (fr) 1989-01-18

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Legal Events

Date Code Title Description
ST Notification of lapse