FR2589256A1 - SWITCH OR OPTICAL MEMORY FOR INFORMATION - Google Patents

SWITCH OR OPTICAL MEMORY FOR INFORMATION Download PDF

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Publication number
FR2589256A1
FR2589256A1 FR8613805A FR8613805A FR2589256A1 FR 2589256 A1 FR2589256 A1 FR 2589256A1 FR 8613805 A FR8613805 A FR 8613805A FR 8613805 A FR8613805 A FR 8613805A FR 2589256 A1 FR2589256 A1 FR 2589256A1
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Prior art keywords
single crystal
laser
radiation
light source
switch
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FR8613805A
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French (fr)
Inventor
Theo Woike
Wolfgang Krasser
Siegfried Haussuhl
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Forschungszentrum Juelich GmbH
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Kernforschungsanlage Juelich GmbH
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Publication of FR2589256A1 publication Critical patent/FR2589256A1/en
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/0009—Materials therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0126—Opto-optical modulation, i.e. control of one light beam by another light beam, not otherwise provided for in this subclass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24304—Metals or metalloids group 2 or 12 elements (e.g. Be, Ca, Mg, Zn, Cd)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24306—Metals or metalloids transition metal elements of groups 3-10
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24318—Non-metallic elements
    • G11B2007/2432—Oxygen
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24318—Non-metallic elements
    • G11B2007/24322—Nitrogen
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24318—Non-metallic elements
    • G11B2007/24328—Carbon

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Optical Head (AREA)

Abstract

IL EST CONSTITUE D'UN MONOCRISTAL 1 EN BAFE(CNNONHO D'UNE SOURCE LUMINEUSE AYANT UNE LONGUEUR D'ONDE L DE 430 A 510 NM, D'UNE SOURCE LUMINEUSE AYANT UNE LONGUEUR D'ONDE L DE 600 A 660 NM ET D'UN DISPOSITIF POUR REFROIDIR LE MONOCRISTAL 1 A UNE TEMPERATURE DE 200 K. TRAITEMENT DE L'INFORMATION.IT CONSISTS OF A BAFE MONOCRISTAL 1 (CNNONHO OF A LIGHT SOURCE HAVING A WAVELENGTH L OF 430 TO 510 NM, A LIGHT SOURCE HAVING A WAVELENGTH L OF 600 TO 660 NM AND OF A DEVICE FOR COOLING THE MONOCRISTAL 1 TO A TEMPERATURE OF 200 K. DATA PROCESSING.

Description

Commutateur ou mémoire optique pour des informations.Switch or optical memory for information.

L'invention se rapporte à un commutateur ou une mémoire optique pour mémoriser des informations constitué d'un monocristal de prussiate de nitrosyle, d'une source lumineuse de production de rayonnement  The invention relates to a switch or an optical memory for storing information consisting of a monocrystal of nitrosyl prussiate, a light source for producing radiation.

pour le pompage et la lecture des emplacements à irra-  for pumping and reading locations to irra-

dier ou irradiés du monocristal, d'un dispositif d'orien-  irradiated or irradiated single crystal, an orientation device

tation du rayonnement en vue d'irradier séparément les  radiation to separately irradiate

emplacements du monocristal, ainsi que d'un photodétec-  locations of the single crystal, as well as a photodetector

teur pour compter les photons issus des emplacements du monocristal. Ce que l'on appelle "l'ordinateur optique" fait  to count the photons from the single crystal locations. The so-called "optical computer" makes

actuellement l'objet de recherches et de développements.  currently under research and development.

Mais on n'est pas parvenu jusqu'ici à développer un ma-  But it has not been possible so far to develop a

tériau convenant comme milieu de mémorisation qui aurait  material suitable as a medium of memorization which would have

permis la percée de l'ordinateur optique.  allowed the breakthrough of the optical computer.

Par Physical Review Letters, Vol. 53, n 18, 29 Octobre 1984, il est connu que des monocristaux de Na2/Fe(CN).2H20 passent en un état métastable de longue durée de vie à des températures inférieures à 160 K,  By Physical Review Letters, Vol. 53, No. 18, October 29, 1984, it is known that monocrystals of Na2 / Fe (CN) .2H20 pass into a long-lived metastable state at temperatures below 160 K,

par exposition à une longueur d'onde de 400 à 540 nm.  by exposure to a wavelength of 400 to 540 nm.

A des températures supérieures à 160 K et par irradia-  At temperatures above 160 K and by irradiation

tion avec de la lumière rouge, l'état métastable est  with red light, the metastable state is

détruit à nouveau.destroyed again.

L'invention vise un commutateur ou mémoire  The invention relates to a switch or memory

optique pour des informations, qui comprend un mono-  optics for information, which includes a mono-

cristal pouvant être mis en oeuvre à cet effet à une température plus élevée que 160 K et qui, pour le moins, peut être utilisé dans des domaines partiels  crystal can be used for this purpose at a temperature higher than 160 K and which, at the very least, can be used in partial areas

de la technique.of the technique.

Suivant l'invention, le commutateur ou mémoire optique, qui est du type rappelé en tête du présent mémoire, est caractérisé par le fait que: - le monocristal est un monocristal de Ba/Fe(CN) 5N0/nH20; - la source lumineuse produit un rayonnement ayant une longueur d'onde 1 de 430 à 510 nm pour le pompage; - la source lumineuse produit un rayonnement ayant une longueur d'onde 2 de 600 à 660 nm pour la lecture; et  According to the invention, the optical switch or memory, which is of the type recalled at the beginning of the present specification, is characterized by the fact that: the single crystal is a single crystal of Ba / Fe (CN) 5N0 / nH20; the light source produces a radiation having a wavelength 1 of 430 to 510 nm for pumping; the light source produces radiation having a wavelength 2 of 600 to 660 nm for reading; and

- il est prévu un dispositif de refroidisse-  - a cooling device is provided

ment du monocristal à une température de l'ordre de  monocrystal at a temperature of the order of

200 K.200 K.

Il s'est avéré, d'une manière surprenante, que  It turned out, surprisingly, that

pour un monocristal de Ba/Fe(CN)5N0/nH20 une refroidis-  for a monocrystal of Ba / Fe (CN) 5N0 / nH20 a cooling

sement jusqu'à 200 K suffit pour pouvoir le faire pas-  up to 200 K is sufficient to be able to

ser à l'état métastable séparément suivant les empla-  to be metastable separately according to the location

cements.cements.

Le passage ou le "pompage" du monocristal à l'état métastable s'effectue sélectivement pour le  The passage or "pumping" of the single crystal in the metastable state is selectively carried out for the

rayonnement ayant la longueur d'onde indiquée précé-  radiation having the indicated wavelength

demment. Le retour à l'état initial -état 0- ou la lecture s'effectue sélectivement par de la lumière rouge ayant la longueur d'onde mentionnée. Le passage entre les deux états (état 0 et état 1) est réversible et peut être répété souvent à volonté, la vitesse des processus étant selon toute probabilité de l'ordre de  ously. The return to the initial state-state 0- or the reading is carried out selectively by red light having the wavelength mentioned. The passage between the two states (state 0 and state 1) is reversible and can be repeated often at will, the speed of the processes being in all probability of the order of

10- 12 seconde (oscillations du noyau).  10-12 seconds (oscillations of the nucleus).

L'emplacement irradié du monocristal, qui est passé à l'état 1, présente une transmission plus faible  The irradiated location of the single crystal, which has gone to state 1, has a lower transmission

pour le rayonnement utilisé qu'à l'état initial, c'est-  for the radiation used only in the initial state,

à-dire à l'état 0. Ceci donne la possibilité, au moyen du nombre des photons transmis ou également rétrodiffu-  0. This gives the possibility, by means of the number of photons transmitted or also backscattered.

sés, de reconnaître séparément l'état des emplacements.  to recognize the status of the locations separately.

Le dispositif suivant l'invention peut être mis en oeuvre au choix en tant que commutateur rapide ou en tant que mémoire d'informations ayant une durée  The device according to the invention can be implemented optionally as a fast switch or as an information memory having a duration

de mémorisation choisie au hasard suivant que l'infor-  memorization chosen at random according to the information

mation mémorisée est lue par un ordinateur immédiatement après la mémorisation ou seulement après  stored memory is read by a computer immediately after storage or only after

une durée assez longue.a long enough duration.

Les processus de passage à l'état métastable et de retour à l'état initial sont indépendants de la  The processes of transition to the metastable state and return to the initial state are independent of the

dimension du monocristal. Mais, pour le cas o le photo-  dimension of the single crystal. But, in the case where the photo-

détecteur est monté en aval du monocristal, le monocris-  detector is mounted downstream of the single crystal, the single crystal

tal a avantageusement la forme d'un disque mince, l'é-  it advantageously has the shape of a thin disc, the

paisseur de ce disque étant de 0,05 à 0,2 mm environ.  thickness of this disc being from 0.05 to 0.2 mm approximately.

Quand on utilise un monocristal de ce type, il est possible de mesurer l'état dumonocristal à l'emplacement au moyen de la transmission du rayonnement,  When using a single crystal of this type, it is possible to measure the state of the crystal at the location by means of the radiation transmission,

c'est-à-dire le nombre des photons quittant l'emplace-  that is, the number of photons leaving the

ment du monocristal, au moyen du photodétecteur monté  monocrystal, using the mounted photodetector

en aval du monocristal.downstream of the single crystal.

Un mode de réalisation avantageux du commuta-  An advantageous embodiment of switching

teur ou de la mémoire pour mémoriser des informations  or memory to store information

selon l'invention, consiste en ce que la source lumi-  according to the invention, the light source

neuse est constituée de deux lasers qui ont une puis-  neuse consists of two lasers that have a

sance de quelques mW. L'un des lasers qui émet un rayon-  a few mW. One of the lasers that emits a ray-

nement ayant la longueur d'onde)1 sert alors pour le pompage des emplacements individuels du monocristal, tandis que l'autre qui émet le rayonnement ayant la longueur d'onde X2 est mis en oeuvre pour la lecture des emplacements individuels du monocristal. Il est en outre avantageux que les lasers soient des lasers à  The one having the wavelength 1 is then used for pumping the individual locations of the single crystal, while the other which emits the radiation having the wavelength λ 2 is used for the reading of the individual locations of the monocrystal. It is furthermore advantageous for the lasers to be lasers

impulsion. Le passage à l'état métastable 1 s'effec-  impulse. The transition to the metastable state 1

tue alors au moyen d'une impulsion, pendant laquelle  then kills by means of an impulse, during which

le photodétecteur peut être mis hors circuit. L'effa-  the photodetector can be switched off. The effa-

cement s'effectue également d'une manière correspon-  This is also done in a corresponding way.

dante au moyen d'une impulsion.using a pulse.

Un mode de réalisation du dispositif est re-  One embodiment of the device is

présenté schématiquement au dessin et est explicité dans ce qui suit d'une manière plus précise: Le commutateur ou la mémoire pour mémoriser des informations est constitué d'un monocristal 1 en Ba/Fe(CN)5N0/nH20 sur lequel sont dirigés, en passant par les miroirs de laser 2 et 3, les faisceaux d'un  schematically shown in the drawing and is explained in what follows more precisely: The switch or the memory for storing information consists of a single crystal 1 Ba / Fe (CN) 5N0 / nH20 on which are directed, in passing through the laser mirrors 2 and 3, the beams of a

laser I et d'un laser II ayant une puissance de quel-  laser I and a laser II having a power of some

ques nW chacun. Au moyen d'une commande par ordinateur, qui n'est pas représentée au dessin, on déplace les miroirs de lasers 2 et 3 de manière que les faisceaux  nW each. By means of a computer control, which is not represented in the drawing, the laser mirrors 2 and 3 are moved so that the beams

atteignent la surface du monocristal suivant un program-  reach the surface of the single crystal according to a

me prescrit. Le rayonnement pulsé du laser I a la lon-  prescribed me. The pulsed radiation of the laser I has the long-

gueur d'onde 1. A chaque emplacement du monocristal 1 qui subit l'incidence d'une impulsion, se produit l'état  1. At each location of the single crystal 1 which is affected by an impulse, the state occurs

métastable 1. Le photodétecteur ou les diodes corres-  metastable 1. The photodetector or diodes corresponding to

pondantes à l'emplacement d'incidence du monocristal  at the incidence site of the single crystal

sont avantageusement mis hors circuit pendant l'impul-  advantageously disconnected during the impulse

sion.if we.

Suivant l'intensité des impulsions laser, on  Depending on the intensity of the laser pulses,

mémorise des informations dans le monocristal.  stores information in the single crystal.

Pour lire les informations ou pour commuter, on dirige des impulsions du laser II ayant la longueur d'onde 2' en passant par le miroir de laser 3 qui peut  To read the information or to switch, pulses of the laser II having the wavelength 2 'are directed through the laser mirror 3 which can

être déplacé également d'une manière commandée par or-  to be moved also in a manner ordered by or-

dinateur, sur les emplacements du monocristal. En fonc-  on the locations of the single crystal. In function

tion de l'état des emplacements, on dirige, par le sys-  the state of the sites, it is directed by the

tème de lentilles 4, des faisceaux de photons sur des diodes correspondantes du photodétecteur 5. Les états m6tastables 1 sont transformés en même temps en les états O. Les signaux obtenus par le photodétecteur 5 sont envoyés à un dispositif qui n'est pas représenté au dessin et qui est destiné au traitement des signaux (traitement des données, représentation des informations  4, the photon beams on corresponding diodes of the photodetector 5. The mutable states 1 are transformed at the same time into the states O. The signals obtained by the photodetector 5 are sent to a device which is not represented in FIG. drawing and which is intended for signal processing (data processing, representation of information

sous forme d'image et autres traitements semblables).  in the form of images and other similar treatments).

Claims (4)

REVENDICATIONS 1. Commutateur ou mémoire optique, constitué d'un monocristal, d'une source lumineuse de production  1. Switch or optical memory, consisting of a single crystal, a light source of production de rayonnement pour le pompage et la lecture des empla-  radiation for pumping and reading cements à irradier ou irradiés du monocristal, d'un dis-  to be irradiated or irradiated with the single crystal, a positif d'orientation du rayonnement en vue de l'irra-  Positive orientation of radiation with a view to irrational diation des emplacements individuels du monocristal, d'un photodétecteur pour compter les photons issus des emplacements du monocristal, caractérisé en ce que: - le monocristal est un monocristal de Ba/Fe(CN) 5N0/nH20 (1); - la source lumineuse produit un rayonnement ayant une longueur d'onde de 430 à 510 nm pour le pompage; - la source lumineuse produit un rayonnement ayant une longueur d'onde 2 de 600 à 660 nm pour la lecture; et  diation of the individual locations of the single crystal, a photodetector for counting the photons from the single crystal locations, characterized in that: - the single crystal is a single crystal of Ba / Fe (CN) 5N0 / nH20 (1); the light source produces radiation having a wavelength of 430 to 510 nm for pumping; the light source produces radiation having a wavelength 2 of 600 to 660 nm for reading; and - il est prévu un dispositif de refroidisse-  - a cooling device is provided ment du monocristal à une température de l'ordre de 200 K.  monocrystal at a temperature of about 200 K. 2. Commutateur suivant la revendication 1, caractérié en ce que l'épaisseur du monocristal (1) est2. Switch according to claim 1, characterized in that the thickness of the single crystal (1) is comprise entre 0,05 et 0,25 mm.between 0.05 and 0.25 mm. 3. Commutateur suivant l'une des revendica-  3. Switch according to one of the claims tions 1 ou 2, caractérisé en ce que la source lumineu-  1 or 2, characterized in that the light source se est constituée de deux lasers (laser I et laser II) et il est prévu, comme dispositif d'orientation du rayonnement des miroirs de laser (2 et 3).  consists of two lasers (laser I and laser II) and is provided as a radiation orientation device for laser mirrors (2 and 3). 4. Commutateur suivant la revendication 3, caractérisé en ce que les lasers (laser I et laser II)Switch according to Claim 3, characterized in that the lasers (laser I and laser II) sont des lasers à impulsions.are pulsed lasers.
FR8613805A 1985-10-29 1986-10-03 SWITCH OR OPTICAL MEMORY FOR INFORMATION Pending FR2589256A1 (en)

Applications Claiming Priority (1)

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DE19853538424 DE3538424A1 (en) 1985-10-29 1985-10-29 AS OPTICAL SWITCH OR INFORMATION STORE USED DEVICE

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FR2589256A1 true FR2589256A1 (en) 1987-04-30

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DE (1) DE3538424A1 (en)
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JPS63272092A (en) * 1987-04-30 1988-11-09 Yoshiaki Arata Forming method for superpowered composite laser beam
JP4924816B2 (en) * 2007-02-15 2012-04-25 新神戸電機株式会社 Storage battery packaging

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Publication number Priority date Publication date Assignee Title
US4166254A (en) * 1977-10-03 1979-08-28 Bell Telephone Laboratories, Incorporated Switched diffraction grating
JPS60247841A (en) * 1984-05-23 1985-12-07 Seiko Epson Corp Disk for optical memory

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166254A (en) * 1977-10-03 1979-08-28 Bell Telephone Laboratories, Incorporated Switched diffraction grating
JPS60247841A (en) * 1984-05-23 1985-12-07 Seiko Epson Corp Disk for optical memory

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* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS, vol. 15, no. 11, 1 décembre 1969, pages 376-379; A. SZ\KE et al.: "Bistable optical element and its applications" *
PATENT ABSTRACTS OF JAPAN, vol. 10, no. 119 (P-453)[2176], 6 mai 1986; & JP-A-60 247 841 (SUWA SEIKOSHA K.K.) 07-12-1985 *
PHYSICAL REVIEW LETTERS, vol. 53, no. 18, 29 octobre 1984, pages 1767-1770; Th. WOIKE et al.: "Extremely long-living metastable state of NA2[Fe(CN)5NO].2H2O single crystals: optical properties" *

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DE3538424A1 (en) 1987-04-30

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