FR2548453B1 - Procede de fabrication d'un transistor a effet de champ a jonction vertical haute frequence - Google Patents

Procede de fabrication d'un transistor a effet de champ a jonction vertical haute frequence

Info

Publication number
FR2548453B1
FR2548453B1 FR8310909A FR8310909A FR2548453B1 FR 2548453 B1 FR2548453 B1 FR 2548453B1 FR 8310909 A FR8310909 A FR 8310909A FR 8310909 A FR8310909 A FR 8310909A FR 2548453 B1 FR2548453 B1 FR 2548453B1
Authority
FR
France
Prior art keywords
manufacturing
high frequency
effect transistor
junction field
vertical junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8310909A
Other languages
English (en)
Other versions
FR2548453A1 (fr
Inventor
Pierre Briere
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8310909A priority Critical patent/FR2548453B1/fr
Priority to US06/625,256 priority patent/US4586239A/en
Publication of FR2548453A1 publication Critical patent/FR2548453A1/fr
Application granted granted Critical
Publication of FR2548453B1 publication Critical patent/FR2548453B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/981—Utilizing varying dielectric thickness

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
FR8310909A 1983-06-30 1983-06-30 Procede de fabrication d'un transistor a effet de champ a jonction vertical haute frequence Expired FR2548453B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR8310909A FR2548453B1 (fr) 1983-06-30 1983-06-30 Procede de fabrication d'un transistor a effet de champ a jonction vertical haute frequence
US06/625,256 US4586239A (en) 1983-06-30 1984-06-27 Process of manufacturing a high-frequency vertical junction field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8310909A FR2548453B1 (fr) 1983-06-30 1983-06-30 Procede de fabrication d'un transistor a effet de champ a jonction vertical haute frequence

Publications (2)

Publication Number Publication Date
FR2548453A1 FR2548453A1 (fr) 1985-01-04
FR2548453B1 true FR2548453B1 (fr) 1986-11-14

Family

ID=9290361

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8310909A Expired FR2548453B1 (fr) 1983-06-30 1983-06-30 Procede de fabrication d'un transistor a effet de champ a jonction vertical haute frequence

Country Status (2)

Country Link
US (1) US4586239A (fr)
FR (1) FR2548453B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959697A (en) * 1988-07-20 1990-09-25 Vtc Incorporated Short channel junction field effect transistor
FR2855653B1 (fr) * 2003-05-27 2005-10-21 Thales Sa Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2296263A1 (fr) * 1974-12-24 1976-07-23 Radiotechnique Compelec Procede de fabrication d'un dispositif semi-conducteur a effet de champ a canaux verticaux
DE2503800C2 (de) * 1975-01-30 1984-02-16 Sony Corp., Tokyo Sperrschicht-Feldeffekttransistor
US4198645A (en) * 1976-01-27 1980-04-15 Semiconductor Research Foundation Semiconductor controlled rectifier having gate grid dividing surrounding zone into two different impurity concentration sections
US4277881A (en) * 1978-05-26 1981-07-14 Rockwell International Corporation Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
US4261763A (en) * 1979-10-01 1981-04-14 Burroughs Corporation Fabrication of integrated circuits employing only ion implantation for all dopant layers
FR2480502A1 (fr) * 1980-04-14 1981-10-16 Thomson Csf Dispositif semi-conducteur a grille profonde, son application a une diode blocable, et procede de fabrication
US4326269A (en) * 1980-06-09 1982-04-20 General Electric Company One bit memory for bipolar signals
US4381956A (en) * 1981-04-06 1983-05-03 Motorola, Inc. Self-aligned buried channel fabrication process
JPS58484A (ja) * 1981-06-24 1983-01-05 Mitsubishi Heavy Ind Ltd ダビツト装置
US4403396A (en) * 1981-12-24 1983-09-13 Gte Laboratories Incorporated Semiconductor device design and process

Also Published As

Publication number Publication date
FR2548453A1 (fr) 1985-01-04
US4586239A (en) 1986-05-06

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Legal Events

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CD Change of name or company name
ST Notification of lapse