FR2538616B1 - Procede de fabrication collective de diodes hyperfrequence avec encapsulation incorporee et diodes ainsi obtenues - Google Patents
Procede de fabrication collective de diodes hyperfrequence avec encapsulation incorporee et diodes ainsi obtenuesInfo
- Publication number
- FR2538616B1 FR2538616B1 FR8221873A FR8221873A FR2538616B1 FR 2538616 B1 FR2538616 B1 FR 2538616B1 FR 8221873 A FR8221873 A FR 8221873A FR 8221873 A FR8221873 A FR 8221873A FR 2538616 B1 FR2538616 B1 FR 2538616B1
- Authority
- FR
- France
- Prior art keywords
- diodes
- encapsulation
- incorporated
- microwave
- collective manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005538 encapsulation Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8221873A FR2538616B1 (fr) | 1982-12-28 | 1982-12-28 | Procede de fabrication collective de diodes hyperfrequence avec encapsulation incorporee et diodes ainsi obtenues |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8221873A FR2538616B1 (fr) | 1982-12-28 | 1982-12-28 | Procede de fabrication collective de diodes hyperfrequence avec encapsulation incorporee et diodes ainsi obtenues |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2538616A1 FR2538616A1 (fr) | 1984-06-29 |
FR2538616B1 true FR2538616B1 (fr) | 1986-01-24 |
Family
ID=9280564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8221873A Expired FR2538616B1 (fr) | 1982-12-28 | 1982-12-28 | Procede de fabrication collective de diodes hyperfrequence avec encapsulation incorporee et diodes ainsi obtenues |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2538616B1 (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2559959B1 (fr) * | 1984-02-21 | 1987-05-22 | Thomson Csf | Diode hyperfrequence a connexions externes prises au moyen de poutres et son procede de realisation |
GB8719309D0 (en) * | 1987-08-14 | 1987-09-23 | Marconi Electronic Devices | Diodes |
FR2631488B1 (fr) * | 1988-05-10 | 1990-07-27 | Thomson Hybrides Microondes | Circuit integre hyperfrequence de type planar, comportant au moins un composant mesa, et son procede de fabrication |
FR2639149A1 (fr) * | 1988-11-15 | 1990-05-18 | Thomson Csf | Procede de realisation de composants sans substrat |
KR940016630A (ko) * | 1992-12-23 | 1994-07-23 | 프레데릭 얀 스미트 | 반도체 장치 및 제조방법 |
EP0603971A3 (fr) * | 1992-12-23 | 1995-06-28 | Koninkl Philips Electronics Nv | Dispositif semi-conducteur à flancs passivés et son procédé de fabrication. |
KR940016546A (ko) * | 1992-12-23 | 1994-07-23 | 프레데릭 얀 스미트 | 반도체 장치 및 제조방법 |
EP0603973A3 (fr) * | 1992-12-23 | 1995-06-28 | Philips Electronics Nv | Composant semi-conducteur ayant des jonctions p-n séparées par des tranchées et son procédé de fabrication. |
GB2368970A (en) * | 2000-06-28 | 2002-05-15 | Marconi Applied Techn Ltd | Semiconductor packaging |
DE10040448A1 (de) * | 2000-08-18 | 2002-03-07 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zu dessen Herstellung |
JP3991872B2 (ja) * | 2003-01-23 | 2007-10-17 | 松下電器産業株式会社 | 半導体装置の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2346854A1 (fr) * | 1975-10-02 | 1977-10-28 | Thomson Csf | Circuit integre comportant une source d'ondes millimetriques, et procede de fabrication dudit circuit |
DE2611059A1 (de) * | 1976-03-16 | 1977-09-29 | Siemens Ag | Gehaeuseloses halbleiterbauelement mit doppelwaermesenke |
FR2410363A1 (fr) * | 1977-11-28 | 1979-06-22 | Silicium Semiconducteur Ssc | Procede de fabrication de caisson dans un dispositif a semi-conducteurs |
GB2067354B (en) * | 1980-01-09 | 1984-04-18 | Aei Semiconductors Ltd | Mounting for a sc device |
US4325182A (en) * | 1980-08-25 | 1982-04-20 | General Electric Company | Fast isolation diffusion |
-
1982
- 1982-12-28 FR FR8221873A patent/FR2538616B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2538616A1 (fr) | 1984-06-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |