FR2538616B1 - Procede de fabrication collective de diodes hyperfrequence avec encapsulation incorporee et diodes ainsi obtenues - Google Patents

Procede de fabrication collective de diodes hyperfrequence avec encapsulation incorporee et diodes ainsi obtenues

Info

Publication number
FR2538616B1
FR2538616B1 FR8221873A FR8221873A FR2538616B1 FR 2538616 B1 FR2538616 B1 FR 2538616B1 FR 8221873 A FR8221873 A FR 8221873A FR 8221873 A FR8221873 A FR 8221873A FR 2538616 B1 FR2538616 B1 FR 2538616B1
Authority
FR
France
Prior art keywords
diodes
encapsulation
incorporated
microwave
collective manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8221873A
Other languages
English (en)
Other versions
FR2538616A1 (fr
Inventor
Marianne Boudot
Raymond Henry
Michel Heitzmann
Claude Carriere
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8221873A priority Critical patent/FR2538616B1/fr
Publication of FR2538616A1 publication Critical patent/FR2538616A1/fr
Application granted granted Critical
Publication of FR2538616B1 publication Critical patent/FR2538616B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609Diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3171Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
FR8221873A 1982-12-28 1982-12-28 Procede de fabrication collective de diodes hyperfrequence avec encapsulation incorporee et diodes ainsi obtenues Expired FR2538616B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8221873A FR2538616B1 (fr) 1982-12-28 1982-12-28 Procede de fabrication collective de diodes hyperfrequence avec encapsulation incorporee et diodes ainsi obtenues

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8221873A FR2538616B1 (fr) 1982-12-28 1982-12-28 Procede de fabrication collective de diodes hyperfrequence avec encapsulation incorporee et diodes ainsi obtenues

Publications (2)

Publication Number Publication Date
FR2538616A1 FR2538616A1 (fr) 1984-06-29
FR2538616B1 true FR2538616B1 (fr) 1986-01-24

Family

ID=9280564

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8221873A Expired FR2538616B1 (fr) 1982-12-28 1982-12-28 Procede de fabrication collective de diodes hyperfrequence avec encapsulation incorporee et diodes ainsi obtenues

Country Status (1)

Country Link
FR (1) FR2538616B1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2559959B1 (fr) * 1984-02-21 1987-05-22 Thomson Csf Diode hyperfrequence a connexions externes prises au moyen de poutres et son procede de realisation
GB8719309D0 (en) * 1987-08-14 1987-09-23 Marconi Electronic Devices Diodes
FR2631488B1 (fr) * 1988-05-10 1990-07-27 Thomson Hybrides Microondes Circuit integre hyperfrequence de type planar, comportant au moins un composant mesa, et son procede de fabrication
FR2639149A1 (fr) * 1988-11-15 1990-05-18 Thomson Csf Procede de realisation de composants sans substrat
KR940016630A (ko) * 1992-12-23 1994-07-23 프레데릭 얀 스미트 반도체 장치 및 제조방법
EP0603971A3 (fr) * 1992-12-23 1995-06-28 Koninkl Philips Electronics Nv Dispositif semi-conducteur à flancs passivés et son procédé de fabrication.
KR940016546A (ko) * 1992-12-23 1994-07-23 프레데릭 얀 스미트 반도체 장치 및 제조방법
EP0603973A3 (fr) * 1992-12-23 1995-06-28 Philips Electronics Nv Composant semi-conducteur ayant des jonctions p-n séparées par des tranchées et son procédé de fabrication.
GB2368970A (en) * 2000-06-28 2002-05-15 Marconi Applied Techn Ltd Semiconductor packaging
DE10040448A1 (de) * 2000-08-18 2002-03-07 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zu dessen Herstellung
JP3991872B2 (ja) * 2003-01-23 2007-10-17 松下電器産業株式会社 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2346854A1 (fr) * 1975-10-02 1977-10-28 Thomson Csf Circuit integre comportant une source d'ondes millimetriques, et procede de fabrication dudit circuit
DE2611059A1 (de) * 1976-03-16 1977-09-29 Siemens Ag Gehaeuseloses halbleiterbauelement mit doppelwaermesenke
FR2410363A1 (fr) * 1977-11-28 1979-06-22 Silicium Semiconducteur Ssc Procede de fabrication de caisson dans un dispositif a semi-conducteurs
GB2067354B (en) * 1980-01-09 1984-04-18 Aei Semiconductors Ltd Mounting for a sc device
US4325182A (en) * 1980-08-25 1982-04-20 General Electric Company Fast isolation diffusion

Also Published As

Publication number Publication date
FR2538616A1 (fr) 1984-06-29

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Legal Events

Date Code Title Description
ST Notification of lapse