FR2529013B1 - Circuit a haute frequence et dispositif semi-conducteur pour equiper un tel circuit - Google Patents
Circuit a haute frequence et dispositif semi-conducteur pour equiper un tel circuitInfo
- Publication number
- FR2529013B1 FR2529013B1 FR8310036A FR8310036A FR2529013B1 FR 2529013 B1 FR2529013 B1 FR 2529013B1 FR 8310036 A FR8310036 A FR 8310036A FR 8310036 A FR8310036 A FR 8310036A FR 2529013 B1 FR2529013 B1 FR 2529013B1
- Authority
- FR
- France
- Prior art keywords
- circuit
- fitting
- semiconductor device
- high frequency
- frequency circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8202470A NL8202470A (nl) | 1982-06-18 | 1982-06-18 | Hoogfrequentschakelinrichting en halfgeleiderinrichting voor toepassing in een dergelijke inrichting. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2529013A1 FR2529013A1 (fr) | 1983-12-23 |
FR2529013B1 true FR2529013B1 (fr) | 1987-04-17 |
Family
ID=19839906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8310036A Expired FR2529013B1 (fr) | 1982-06-18 | 1983-06-17 | Circuit a haute frequence et dispositif semi-conducteur pour equiper un tel circuit |
Country Status (9)
Country | Link |
---|---|
US (1) | US4739389A (fr) |
JP (1) | JPS594064A (fr) |
AU (1) | AU557136B2 (fr) |
CA (1) | CA1213079A (fr) |
DE (1) | DE3320275A1 (fr) |
FR (1) | FR2529013B1 (fr) |
GB (1) | GB2123209B (fr) |
IT (1) | IT1170151B (fr) |
NL (1) | NL8202470A (fr) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0128986B1 (fr) * | 1982-12-23 | 1991-02-27 | Sumitomo Electric Industries Limited | Circuit intégré monolithique à micro-ondes et procédé pour sa sélection |
US4577213A (en) * | 1984-03-05 | 1986-03-18 | Honeywell Inc. | Internally matched Schottky barrier beam lead diode |
US4675717A (en) * | 1984-10-09 | 1987-06-23 | American Telephone And Telegraph Company, At&T Bell Laboratories | Water-scale-integrated assembly |
JPS61292383A (ja) * | 1985-06-20 | 1986-12-23 | Sony Corp | 集積回路装置 |
CH668667A5 (de) * | 1985-11-15 | 1989-01-13 | Bbc Brown Boveri & Cie | Leistungshalbleitermodul. |
US5060048A (en) * | 1986-10-22 | 1991-10-22 | Siemens Aktiengesellschaft & Semikron GmbH | Semiconductor component having at least one power mosfet |
FR2608318B1 (fr) * | 1986-12-16 | 1989-06-16 | Thomson Semiconducteurs | Dispositif semi-conducteur a faible bruit en hyperfrequence, monte dans un boitier |
JPS6414949A (en) * | 1987-07-08 | 1989-01-19 | Nec Corp | Semiconductor device and manufacture of the same |
US4901136A (en) * | 1987-07-14 | 1990-02-13 | General Electric Company | Multi-chip interconnection package |
JPH02184054A (ja) * | 1989-01-11 | 1990-07-18 | Toshiba Corp | ハイブリッド型樹脂封止半導体装置 |
US4967258A (en) * | 1989-03-02 | 1990-10-30 | Ball Corporation | Structure for use in self-biasing and source bypassing a packaged, field-effect transistor and method for making same |
EP0393220B1 (fr) * | 1989-04-20 | 1994-07-13 | International Business Machines Corporation | Empaquetage pour circuit intégré |
JPH0777261B2 (ja) * | 1989-07-10 | 1995-08-16 | 三菱電機株式会社 | 固体撮像装置及びその組立方法 |
US5244833A (en) * | 1989-07-26 | 1993-09-14 | International Business Machines Corporation | Method for manufacturing an integrated circuit chip bump electrode using a polymer layer and a photoresist layer |
DE68927931T2 (de) * | 1989-07-26 | 1997-09-18 | Ibm | Verfahren zur Herstellung einer Packungsstruktur für einen integrierten Schaltungschip |
JPH0724270B2 (ja) * | 1989-12-14 | 1995-03-15 | 株式会社東芝 | 半導体装置及びその製造方法 |
EP0460554A1 (fr) * | 1990-05-30 | 1991-12-11 | Sanyo Electric Co., Ltd. | Dispositif à circuit intégré hybride |
US5049978A (en) * | 1990-09-10 | 1991-09-17 | General Electric Company | Conductively enclosed hybrid integrated circuit assembly using a silicon substrate |
US5153408A (en) * | 1990-10-31 | 1992-10-06 | International Business Machines Corporation | Method and structure for repairing electrical lines |
DE4108154A1 (de) * | 1991-03-14 | 1992-09-17 | Telefunken Electronic Gmbh | Elektronische baugruppe und verfahren zur herstellung von elektronischen baugruppen |
EP0506122A3 (en) * | 1991-03-29 | 1994-09-14 | Matsushita Electric Ind Co Ltd | Power module |
US5151769A (en) * | 1991-04-04 | 1992-09-29 | General Electric Company | Optically patterned RF shield for an integrated circuit chip for analog and/or digital operation at microwave frequencies |
JPH0583017A (ja) * | 1991-09-24 | 1993-04-02 | Mitsubishi Electric Corp | マイクロ波集積回路装置 |
US5596171A (en) * | 1993-05-21 | 1997-01-21 | Harris; James M. | Package for a high frequency semiconductor device and methods for fabricating and connecting the same to an external circuit |
US5665649A (en) * | 1993-05-21 | 1997-09-09 | Gardiner Communications Corporation | Process for forming a semiconductor device base array and mounting semiconductor devices thereon |
JP2638514B2 (ja) * | 1994-11-11 | 1997-08-06 | 日本電気株式会社 | 半導体パッケージ |
DE19720300B4 (de) * | 1996-06-03 | 2006-05-04 | CiS Institut für Mikrosensorik gGmbH | Elektronisches Hybrid-Bauelement und Verfahren zu seiner Herstellung |
KR100503531B1 (ko) * | 1996-11-05 | 2005-09-26 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 반도체디바이스 |
JP3859340B2 (ja) * | 1998-01-06 | 2006-12-20 | 三菱電機株式会社 | 半導体装置 |
EP1487019A1 (fr) * | 2003-06-12 | 2004-12-15 | Koninklijke Philips Electronics N.V. | Dispositif semiconducteur et son procédé de fabrication |
US9214909B2 (en) * | 2005-07-29 | 2015-12-15 | Mks Instruments, Inc. | High reliability RF generator architecture |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
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US3022472A (en) * | 1958-01-22 | 1962-02-20 | Bell Telephone Labor Inc | Variable equalizer employing semiconductive element |
BE590576A (fr) * | 1959-05-06 | |||
DE1591501A1 (de) * | 1967-06-06 | 1970-02-26 | Siemens Ag | Integrierter Halbleiterschaltkreis |
US3577037A (en) * | 1968-07-05 | 1971-05-04 | Ibm | Diffused electrical connector apparatus and method of making same |
JPS4947713B1 (fr) * | 1970-04-27 | 1974-12-17 | ||
JPS50147292A (fr) * | 1974-05-15 | 1975-11-26 | ||
US4023198A (en) * | 1974-08-16 | 1977-05-10 | Motorola, Inc. | High frequency, high power semiconductor package |
US3996603A (en) * | 1974-10-18 | 1976-12-07 | Motorola, Inc. | RF power semiconductor package and method of manufacture |
US4122479A (en) * | 1975-01-31 | 1978-10-24 | Hitachi, Ltd. | Optoelectronic device having control circuit for light emitting element and circuit for light receiving element integrated in a semiconductor body |
JPS5293285A (en) * | 1976-02-02 | 1977-08-05 | Hitachi Ltd | Structure for semiconductor device |
US4092664A (en) * | 1976-02-17 | 1978-05-30 | Hughes Aircraft Company | Carrier for mounting a semiconductor chip |
JPS5337383A (en) * | 1976-09-20 | 1978-04-06 | Hitachi Ltd | Semiconductor integrated circuit |
JPS5411666A (en) * | 1977-06-28 | 1979-01-27 | Nec Corp | Microwave high output transistor |
US4190854A (en) * | 1978-02-15 | 1980-02-26 | National Semiconductor Corporation | Trim structure for integrated capacitors |
JPS5591165A (en) * | 1978-12-28 | 1980-07-10 | Fujitsu Ltd | Microwave ic |
DE3067917D1 (en) * | 1979-03-10 | 1984-06-28 | Fujitsu Ltd | Constructional arrangement for semiconductor devices |
JPS57166068A (en) * | 1981-04-07 | 1982-10-13 | Toshiba Corp | Semiconductor device |
EP0062725B1 (fr) * | 1981-04-14 | 1984-09-12 | Deutsche ITT Industries GmbH | Procédé pour la fabrication d'un transistor planaire intégré |
US4463322A (en) * | 1981-08-14 | 1984-07-31 | Texas Instruments Incorporated | Self-biasing for FET-driven microwave VCOs |
-
1982
- 1982-06-18 NL NL8202470A patent/NL8202470A/nl not_active Application Discontinuation
-
1983
- 1983-06-04 DE DE19833320275 patent/DE3320275A1/de not_active Withdrawn
- 1983-06-14 CA CA000430318A patent/CA1213079A/fr not_active Expired
- 1983-06-15 IT IT2164183A patent/IT1170151B/it active
- 1983-06-15 GB GB8316270A patent/GB2123209B/en not_active Expired
- 1983-06-16 AU AU15837/83A patent/AU557136B2/en not_active Ceased
- 1983-06-17 JP JP58107976A patent/JPS594064A/ja active Pending
- 1983-06-17 FR FR8310036A patent/FR2529013B1/fr not_active Expired
-
1986
- 1986-09-26 US US06/913,615 patent/US4739389A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2529013A1 (fr) | 1983-12-23 |
DE3320275A1 (de) | 1983-12-22 |
IT8321641A0 (it) | 1983-06-15 |
CA1213079A (fr) | 1986-10-21 |
GB2123209A (en) | 1984-01-25 |
NL8202470A (nl) | 1984-01-16 |
IT8321641A1 (it) | 1984-12-15 |
IT1170151B (it) | 1987-06-03 |
AU557136B2 (en) | 1986-12-04 |
AU1583783A (en) | 1983-12-22 |
US4739389A (en) | 1988-04-19 |
GB8316270D0 (en) | 1983-07-20 |
GB2123209B (en) | 1986-01-02 |
JPS594064A (ja) | 1984-01-10 |
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ST | Notification of lapse |