FR2449974A1 - Dispositif de formation d'image couleur a semi-conducteurs et methode de fabrication de ce dernier - Google Patents

Dispositif de formation d'image couleur a semi-conducteurs et methode de fabrication de ce dernier

Info

Publication number
FR2449974A1
FR2449974A1 FR8004179A FR8004179A FR2449974A1 FR 2449974 A1 FR2449974 A1 FR 2449974A1 FR 8004179 A FR8004179 A FR 8004179A FR 8004179 A FR8004179 A FR 8004179A FR 2449974 A1 FR2449974 A1 FR 2449974A1
Authority
FR
France
Prior art keywords
image forming
manufacturing
semiconductor substrate
layers
forming device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8004179A
Other languages
English (en)
Other versions
FR2449974B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2449974A1 publication Critical patent/FR2449974A1/fr
Application granted granted Critical
Publication of FR2449974B1 publication Critical patent/FR2449974B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Filters (AREA)
  • Color Television Image Signal Generators (AREA)

Abstract

DISPOSITIF DE FORMATION D'IMAGE COULEUR A SEMI-CONDUCTEURS CARACTERISE EN CE QU'IL COMPREND UN SUBSTRAT SEMI-CONDUCTEUR 1 SUR LEQUEL SONT SUCCESSIVEMENT LAMINEES UN NOMBRE PREDETERMINE DE COUCHES FILTRANTES 2, 3, 4, DE FORME SOUHAITEE ET AUX CARACTERISTIQUES SPECTRALES PREDETERMINEES, ENTRE LESQUELLES SONT DISPOSEES UN NOMBRE PREDETERMINE DE COUCHES 5, 6, 7 D'UNE MATIERE ORGANIQUE, TRANSPARENTE, HAUTEMENT MOLECULAIRE ET SENSIBLE AU RAYONNEMENT. CE SUBSTRAT SEMI-CONDUCTEUR 1 POSSEDE AU MOINS UNE PARTIE DETECTRICE 10 COMPOSEE DE PLUSIEURS ELEMENTS DETECTEURS OPTIQUES. LA METHODE DE FABRICATION D'UN TEL DISPOSITIF PEUT ETRE SIMPLIFIEE EN UTILISANT LA MATIERE HAUTEMENT MOLECULAIRE ET SENSIBLE AU RAYONNEMENT POUR LES COUCHES INTERMEDIAIRES 5, 6 OU LES COUCHES DE PROTECTION 7 QUI SONT EMPLOYEES POUR FORMER UNE CONSTRUCTION EN LAMELLES DES FILTRES DE DECOMPOSITION DE COULEUR 2, 3, 4. DE PLUS, IL EST PARTICULIEREMENT SOUHAITABLE DE FORMER SUR LE SUBSTRAT SEMI-CONDUCTEUR 1, AVANT DE PLACER LES FILTRES SUR CE DERNIER, UNE PELLICULE D'UNE SUBSTANCE ORGANIQUE, HAUTEMENT MOLECULAIRE.
FR8004179A 1979-02-26 1980-02-26 Dispositif de formation d'image couleur a semi-conducteurs et methode de fabrication de ce dernier Granted FR2449974A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54020801A JPS6046401B2 (ja) 1979-02-26 1979-02-26 固体撮像素子の製造方法

Publications (2)

Publication Number Publication Date
FR2449974A1 true FR2449974A1 (fr) 1980-09-19
FR2449974B1 FR2449974B1 (fr) 1983-06-24

Family

ID=12037151

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8004179A Granted FR2449974A1 (fr) 1979-02-26 1980-02-26 Dispositif de formation d'image couleur a semi-conducteurs et methode de fabrication de ce dernier

Country Status (7)

Country Link
US (1) US4285007A (fr)
JP (1) JPS6046401B2 (fr)
CA (1) CA1133614A (fr)
DE (1) DE3006919C2 (fr)
FR (1) FR2449974A1 (fr)
GB (1) GB2043998B (fr)
NL (1) NL8001159A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030476A1 (fr) * 1979-12-10 1981-06-17 Hitachi, Ltd. Dispositif de formation d'images couleur à semiconducteur et son procédé de fabrication
EP0035886A2 (fr) * 1980-03-06 1981-09-16 EASTMAN KODAK COMPANY (a New Jersey corporation) Dispositif de formation d'images à l'état solide comportant un filtre à couleur matriciel et procédé pour sa fabrication

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56165362A (en) * 1980-05-26 1981-12-18 Hitachi Ltd Manufacture of solid state color image pickup element
JPS5754905A (en) 1980-09-19 1982-04-01 Hitachi Ltd Manufacture of color filter
JPS57148367A (en) * 1981-03-09 1982-09-13 Nec Corp Manufacture of solid state color image pickup element
US4882616A (en) * 1981-06-29 1989-11-21 Nippon Electric Co., Ltd. Color filter for a solid state imaging device
JPS5812354A (ja) * 1981-07-15 1983-01-24 Toshiba Corp カラ−用固体撮像装置の製造方法
JPS5898959A (ja) * 1981-12-09 1983-06-13 Hitachi Ltd カラー固体撮像素子の製造方法
US4577098A (en) * 1982-04-14 1986-03-18 Matsushita Electric Industrial Co., Ltd. Solid-state image sensor with a phototropic or fluorescent layer
JPS5999761A (ja) * 1982-11-30 1984-06-08 Fuji Photo Film Co Ltd カラ−固体撮像素子の製造方法
JPS59175761A (ja) * 1983-03-26 1984-10-04 Mitsubishi Electric Corp カラ−フイルタ付固体撮像素子の製造方法
US4553153A (en) * 1983-10-21 1985-11-12 Eastman Kodak Company Planarizing layer for semiconductor substrates such as solid state imagers
JPS6130068A (ja) * 1984-07-23 1986-02-12 Victor Co Of Japan Ltd カラ−化固体撮像素子製造法
JPH053361Y2 (fr) * 1986-07-14 1993-01-27
JPS642002A (en) * 1987-06-24 1989-01-06 Fujitsu Ltd Formation of solid color image pick up element
US5568186A (en) * 1993-11-15 1996-10-22 The United States Of America As Represented By The Secretary Of The Army Focal plane filtered multispectral multidetector imager
US6252220B1 (en) 1999-04-26 2001-06-26 Xerox Corporation Sensor cover glass with infrared filter
EP1138394A1 (fr) * 2000-03-31 2001-10-04 Nordson Corporation Améliorations concernant un système de revêtement en poudre
US6316284B1 (en) 2000-09-07 2001-11-13 Xerox Corporation Infrared correction in color scanners
US6768565B1 (en) 2000-09-07 2004-07-27 Xerox Corporation Infrared correction in color scanners
EP1438750A1 (fr) * 2001-10-26 2004-07-21 STMicroelectronics N.V. Procede de production d'un capteur d'image tfa, et capteur d'image tfa y relatif
US7282382B2 (en) * 2001-10-29 2007-10-16 Stmicroelectronics N.V. Method for producing a photodiode contact for a TFA image sensor
AT505688A1 (de) * 2007-09-13 2009-03-15 Nanoident Technologies Ag Sensormatrix aus halbleiterbauteilen

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623794A (en) * 1968-12-19 1971-11-30 Technical Operations Inc Spectral zonal encoder
FR2367391A1 (fr) * 1976-10-08 1978-05-05 Eastman Kodak Co Cible photosensible pour l'analyse d'images en couleurs et son procede de fabrication

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3619041A (en) * 1969-01-13 1971-11-09 Technical Operations Inc Spectral zonal encoder employing a silver halide emulsion layer
US4204866A (en) * 1976-10-08 1980-05-27 Eastman Kodak Company Solid-state color imaging devices and method for making them
US4196010A (en) * 1978-06-06 1980-04-01 Eastman Kodak Company Color filter arrays and color imaging devices
US4190446A (en) * 1978-09-06 1980-02-26 Eastman Kodak Company Photocrosslinkable, high-temperature-resistant polymers and their use in color imaging devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623794A (en) * 1968-12-19 1971-11-30 Technical Operations Inc Spectral zonal encoder
FR2367391A1 (fr) * 1976-10-08 1978-05-05 Eastman Kodak Co Cible photosensible pour l'analyse d'images en couleurs et son procede de fabrication

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030476A1 (fr) * 1979-12-10 1981-06-17 Hitachi, Ltd. Dispositif de formation d'images couleur à semiconducteur et son procédé de fabrication
EP0030476B1 (fr) * 1979-12-10 1983-10-05 Hitachi, Ltd. Dispositif de formation d'images couleur à semiconducteur et son procédé de fabrication
EP0035886A2 (fr) * 1980-03-06 1981-09-16 EASTMAN KODAK COMPANY (a New Jersey corporation) Dispositif de formation d'images à l'état solide comportant un filtre à couleur matriciel et procédé pour sa fabrication
EP0035886A3 (en) * 1980-03-06 1983-09-14 Eastman Kodak Company Solid-state imaging device having a color filter array and methods of preparing same

Also Published As

Publication number Publication date
GB2043998A (en) 1980-10-08
DE3006919C2 (de) 1986-01-16
FR2449974B1 (fr) 1983-06-24
DE3006919A1 (de) 1980-08-28
NL8001159A (nl) 1980-08-28
US4285007A (en) 1981-08-18
JPS55115371A (en) 1980-09-05
JPS6046401B2 (ja) 1985-10-16
CA1133614A (fr) 1982-10-12
GB2043998B (en) 1983-05-05

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