JPS5518010A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5518010A
JPS5518010A JP9035678A JP9035678A JPS5518010A JP S5518010 A JPS5518010 A JP S5518010A JP 9035678 A JP9035678 A JP 9035678A JP 9035678 A JP9035678 A JP 9035678A JP S5518010 A JPS5518010 A JP S5518010A
Authority
JP
Japan
Prior art keywords
layer
wave
junction
shape
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9035678A
Other languages
Japanese (ja)
Inventor
Tsuneo Tsukagoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9035678A priority Critical patent/JPS5518010A/en
Publication of JPS5518010A publication Critical patent/JPS5518010A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To reduce forward voltage drop, by forming a wave-shaped pn junction.
CONSTITUTION: An n- epitaxial layer 12 is provided on an n+-type Si substrate 11, and a wave-shape of several μm in depth is formed on the surface of the layer 12 by a photo-etching method and the like. Then, a p+ poly-Si layer 14 is epitaxially grown, and the surfaces are formed in the wave shape in consonance with the layer 12. Thereafter, a thin p layer 13 is formed by the diffusion from the p+ layer as a result of high-temperature treatment, thereby a wave-shaped pn junction 25 is obtained. The poly Si is transformed into a single crystal by the heat treatment. Then, Ni electrodes 14a and 11a are attached to the p+ layer 14 and the substrate 11, respectively. Since the pn junction 25 is in a wave shape, the junction area is increased, the current density is decreased, and the forward voltage is decreased.
COPYRIGHT: (C)1980,JPO&Japio
JP9035678A 1978-07-26 1978-07-26 Semiconductor device Pending JPS5518010A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9035678A JPS5518010A (en) 1978-07-26 1978-07-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9035678A JPS5518010A (en) 1978-07-26 1978-07-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5518010A true JPS5518010A (en) 1980-02-07

Family

ID=13996246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9035678A Pending JPS5518010A (en) 1978-07-26 1978-07-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5518010A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06350111A (en) * 1993-06-10 1994-12-22 Nec Corp Varactor diode
JPH11340241A (en) * 1998-05-20 1999-12-10 Samsung Electronics Co Ltd Semiconductor element diode and its manufacture
KR20000066564A (en) * 1999-04-19 2000-11-15 장용화 A Diode Sensor And Producing Methode for Multi-Purpose
CN110133047A (en) * 2019-05-30 2019-08-16 京东方科技集团股份有限公司 The detection method of detection unit, detection device and memebrane protein diffusion rate

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06350111A (en) * 1993-06-10 1994-12-22 Nec Corp Varactor diode
JPH11340241A (en) * 1998-05-20 1999-12-10 Samsung Electronics Co Ltd Semiconductor element diode and its manufacture
JP4647734B2 (en) * 1998-05-20 2011-03-09 フェアチャイルドコリア半導體株式会社 Semiconductor device diode and method of manufacturing the same
KR20000066564A (en) * 1999-04-19 2000-11-15 장용화 A Diode Sensor And Producing Methode for Multi-Purpose
CN110133047A (en) * 2019-05-30 2019-08-16 京东方科技集团股份有限公司 The detection method of detection unit, detection device and memebrane protein diffusion rate

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