JPS5518010A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5518010A JPS5518010A JP9035678A JP9035678A JPS5518010A JP S5518010 A JPS5518010 A JP S5518010A JP 9035678 A JP9035678 A JP 9035678A JP 9035678 A JP9035678 A JP 9035678A JP S5518010 A JPS5518010 A JP S5518010A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- wave
- junction
- shape
- poly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Photovoltaic Devices (AREA)
Abstract
PURPOSE: To reduce forward voltage drop, by forming a wave-shaped pn junction.
CONSTITUTION: An n- epitaxial layer 12 is provided on an n+-type Si substrate 11, and a wave-shape of several μm in depth is formed on the surface of the layer 12 by a photo-etching method and the like. Then, a p+ poly-Si layer 14 is epitaxially grown, and the surfaces are formed in the wave shape in consonance with the layer 12. Thereafter, a thin p layer 13 is formed by the diffusion from the p+ layer as a result of high-temperature treatment, thereby a wave-shaped pn junction 25 is obtained. The poly Si is transformed into a single crystal by the heat treatment. Then, Ni electrodes 14a and 11a are attached to the p+ layer 14 and the substrate 11, respectively. Since the pn junction 25 is in a wave shape, the junction area is increased, the current density is decreased, and the forward voltage is decreased.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9035678A JPS5518010A (en) | 1978-07-26 | 1978-07-26 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9035678A JPS5518010A (en) | 1978-07-26 | 1978-07-26 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5518010A true JPS5518010A (en) | 1980-02-07 |
Family
ID=13996246
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9035678A Pending JPS5518010A (en) | 1978-07-26 | 1978-07-26 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5518010A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06350111A (en) * | 1993-06-10 | 1994-12-22 | Nec Corp | Varactor diode |
JPH11340241A (en) * | 1998-05-20 | 1999-12-10 | Samsung Electronics Co Ltd | Semiconductor element diode and its manufacture |
KR20000066564A (en) * | 1999-04-19 | 2000-11-15 | 장용화 | A Diode Sensor And Producing Methode for Multi-Purpose |
CN110133047A (en) * | 2019-05-30 | 2019-08-16 | 京东方科技集团股份有限公司 | The detection method of detection unit, detection device and memebrane protein diffusion rate |
-
1978
- 1978-07-26 JP JP9035678A patent/JPS5518010A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06350111A (en) * | 1993-06-10 | 1994-12-22 | Nec Corp | Varactor diode |
JPH11340241A (en) * | 1998-05-20 | 1999-12-10 | Samsung Electronics Co Ltd | Semiconductor element diode and its manufacture |
JP4647734B2 (en) * | 1998-05-20 | 2011-03-09 | フェアチャイルドコリア半導體株式会社 | Semiconductor device diode and method of manufacturing the same |
KR20000066564A (en) * | 1999-04-19 | 2000-11-15 | 장용화 | A Diode Sensor And Producing Methode for Multi-Purpose |
CN110133047A (en) * | 2019-05-30 | 2019-08-16 | 京东方科技集团股份有限公司 | The detection method of detection unit, detection device and memebrane protein diffusion rate |
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