FR2397067A1 - Dispositif d'injection de gaz pour gravure ou depot reactifs sous decharge luminescente - Google Patents

Dispositif d'injection de gaz pour gravure ou depot reactifs sous decharge luminescente

Info

Publication number
FR2397067A1
FR2397067A1 FR7720766A FR7720766A FR2397067A1 FR 2397067 A1 FR2397067 A1 FR 2397067A1 FR 7720766 A FR7720766 A FR 7720766A FR 7720766 A FR7720766 A FR 7720766A FR 2397067 A1 FR2397067 A1 FR 2397067A1
Authority
FR
France
Prior art keywords
glow discharge
gas
iii
vessel
reactive materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7720766A
Other languages
English (en)
Other versions
FR2397067B1 (fr
Inventor
Francis Forrat
Louise Peccoud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR7720766A priority Critical patent/FR2397067A1/fr
Publication of FR2397067A1 publication Critical patent/FR2397067A1/fr
Application granted granted Critical
Publication of FR2397067B1 publication Critical patent/FR2397067B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)

Abstract

Dispositif d'introduction de gaz dans une enceinte de gravure ou de dépôt réactifs. L'enceinte comprend, à sa partir supérieure, un conduit d'arrivée de gaz 24, des moyens pour porter lesdits gaz dans un état réactif, une sole 10 supportant ledit substrat et un conduit d'évacuation des gaz, Le dispositif est caractérisé en ce qu'il comprend une paroi poreuse auxdits gaz, cette paroi 40 étant disposée à la sortie du conduit d'arrivée de gaz, au-dessus et à proximité de la sole, sa fonction étant de répartir uniformément le flux de gaz sur la surface supérieure de ladite sole. Application aux dépôts de couches sur des semiconducteurs par dépôts réactif sous décharge luminescente.
FR7720766A 1977-07-06 1977-07-06 Dispositif d'injection de gaz pour gravure ou depot reactifs sous decharge luminescente Granted FR2397067A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7720766A FR2397067A1 (fr) 1977-07-06 1977-07-06 Dispositif d'injection de gaz pour gravure ou depot reactifs sous decharge luminescente

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7720766A FR2397067A1 (fr) 1977-07-06 1977-07-06 Dispositif d'injection de gaz pour gravure ou depot reactifs sous decharge luminescente

Publications (2)

Publication Number Publication Date
FR2397067A1 true FR2397067A1 (fr) 1979-02-02
FR2397067B1 FR2397067B1 (fr) 1982-10-15

Family

ID=9193055

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7720766A Granted FR2397067A1 (fr) 1977-07-06 1977-07-06 Dispositif d'injection de gaz pour gravure ou depot reactifs sous decharge luminescente

Country Status (1)

Country Link
FR (1) FR2397067A1 (fr)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4352974A (en) * 1979-08-01 1982-10-05 Hitachi, Ltd. Plasma etcher having isotropic subchamber with gas outlet for producing uniform etching
EP0066088A2 (fr) * 1981-06-02 1982-12-08 International Business Machines Corporation Anode perforée pour dispositif de décapage ionique réactif
FR2514033A1 (fr) * 1981-10-02 1983-04-08 Henaff Louis Installation pour le depot de couches minces en grande surface en phase vapeur reactive par plasma
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
US4491509A (en) * 1984-03-09 1985-01-01 At&T Technologies, Inc. Methods of and apparatus for sputtering material onto a substrate
WO1985002418A1 (fr) * 1983-12-01 1985-06-06 Shatterproof Glass Corporation Systeme de distribution de gaz pour cathodes de pulverisation
WO1987006776A1 (fr) * 1986-04-29 1987-11-05 Loughborough Consultants Limited Appareil a decharge electrique
EP0296891A2 (fr) * 1987-06-26 1988-12-28 Applied Materials, Inc. Procédé pour l'autonettoyage d'une chambre de réaction
EP0413389A1 (fr) * 1989-08-17 1991-02-20 Philips Patentverwaltung GmbH Procédé de déposition de particules microcristallines solides à partir de la phase gazeuse par dépôt chimique en phase vapeur
DE4102198A1 (de) * 1990-01-26 1991-08-08 Fuji Electric Co Ltd Rf-plasma-cvd-vorrichtung und duennfilm-herstellungsverfahren unter anwendung der vorrichtung
DE4029268A1 (de) * 1990-09-14 1992-03-19 Balzers Hochvakuum Verfahren und anordnung zur gleichspannungs-bogenentladungs-unterstuetzten, reaktiven behandlung von gut
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
EP0523609A2 (fr) * 1991-07-15 1993-01-20 Matsushita Electric Industrial Co., Ltd. Procédé de formation d'un film par dépôt chimique en phase vapeur assisté par plasma
WO1999065057A1 (fr) * 1998-06-12 1999-12-16 Applied Materials, Inc. Unite de repartition de gaz
CN113913790A (zh) * 2020-07-08 2022-01-11 湖南红太阳光电科技有限公司 一种平板式pecvd设备用多段式电极板辉光放电装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
JPH0752718B2 (ja) 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
US6786997B1 (en) 1984-11-26 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus
US6113701A (en) 1985-02-14 2000-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US6673722B1 (en) 1985-10-14 2004-01-06 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US6230650B1 (en) 1985-10-14 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4352974A (en) * 1979-08-01 1982-10-05 Hitachi, Ltd. Plasma etcher having isotropic subchamber with gas outlet for producing uniform etching
EP0066088A2 (fr) * 1981-06-02 1982-12-08 International Business Machines Corporation Anode perforée pour dispositif de décapage ionique réactif
EP0066088A3 (en) * 1981-06-02 1984-02-01 International Business Machines Corporation Perforated anode for use in reactive ion etching apparatus
FR2514033A1 (fr) * 1981-10-02 1983-04-08 Henaff Louis Installation pour le depot de couches minces en grande surface en phase vapeur reactive par plasma
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
EP0115970A1 (fr) * 1983-01-05 1984-08-15 Commissariat A L'energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la méthode du plasma réactif
WO1985002418A1 (fr) * 1983-12-01 1985-06-06 Shatterproof Glass Corporation Systeme de distribution de gaz pour cathodes de pulverisation
US4491509A (en) * 1984-03-09 1985-01-01 At&T Technologies, Inc. Methods of and apparatus for sputtering material onto a substrate
WO1987006776A1 (fr) * 1986-04-29 1987-11-05 Loughborough Consultants Limited Appareil a decharge electrique
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
EP0296891A3 (en) * 1987-06-26 1990-05-30 Applied Materials, Inc. Reactor chamber for selfcleaning process
EP0296891A2 (fr) * 1987-06-26 1988-12-28 Applied Materials, Inc. Procédé pour l'autonettoyage d'une chambre de réaction
EP0413389A1 (fr) * 1989-08-17 1991-02-20 Philips Patentverwaltung GmbH Procédé de déposition de particules microcristallines solides à partir de la phase gazeuse par dépôt chimique en phase vapeur
DE4102198A1 (de) * 1990-01-26 1991-08-08 Fuji Electric Co Ltd Rf-plasma-cvd-vorrichtung und duennfilm-herstellungsverfahren unter anwendung der vorrichtung
DE4029268A1 (de) * 1990-09-14 1992-03-19 Balzers Hochvakuum Verfahren und anordnung zur gleichspannungs-bogenentladungs-unterstuetzten, reaktiven behandlung von gut
US5336326A (en) * 1990-09-14 1994-08-09 Balzers Aktiengesellschaft Method of and apparatus for a direct voltage arc discharge enhanced reactive treatment of objects
EP0523609A2 (fr) * 1991-07-15 1993-01-20 Matsushita Electric Industrial Co., Ltd. Procédé de formation d'un film par dépôt chimique en phase vapeur assisté par plasma
EP0523609A3 (fr) * 1991-07-15 1995-06-14 Matsushita Electric Ind Co Ltd
WO1999065057A1 (fr) * 1998-06-12 1999-12-16 Applied Materials, Inc. Unite de repartition de gaz
CN113913790A (zh) * 2020-07-08 2022-01-11 湖南红太阳光电科技有限公司 一种平板式pecvd设备用多段式电极板辉光放电装置

Also Published As

Publication number Publication date
FR2397067B1 (fr) 1982-10-15

Similar Documents

Publication Publication Date Title
FR2397067A1 (fr) Dispositif d'injection de gaz pour gravure ou depot reactifs sous decharge luminescente
JPS5785968A (en) Chemically activated plasma vapor deposition apparatus
EP0284693A3 (en) Plasma deposited coatings and low temperature, plasma method of making same
EP0282836A3 (en) Process and apparatus for depositing of high ohmic resistance layers by cathodic sputtering
EP0371854A3 (fr) Méthode pour déposer sélectivement un métal réfractaire sur des substrats semi-conducteurs
IE41938L (en) Depositing by reactive sputtering
AU5704986A (en) Glow discharge deposition
JPS5591968A (en) Film forming method by glow discharge
ES8707630A1 (es) Perfeccionamientos introducidos en un aparato adaptado para depositar un material semiconductor en un substrato
KR960008697A (ko) 고주파 플라즈마 화학증착법을 이용한 원형기판용 코팅층의 대량 합성장치 및 합성방법
US4415602A (en) Reactive plating method and product
JPS6147645A (ja) 薄膜形成方法
JPS6151629B2 (fr)
JPH0387373A (ja) プラズマｃｖｄ薄膜の形成法
GB1201743A (en) Improvements in or relating to the deposition of a layer of solid material on a substrate by cathode sputtering
JP3259452B2 (ja) プラズマｃｖｄ装置に用いる電極及びプラズマｃｖｄ装置
KR920002169B1 (ko) 플라즈마 증착방법과 이에 적합한 장치
JPS56169770A (en) Ionic plating device
US3434868A (en) Silicon dioxide coatings utilizing a plasma
JPS57153436A (en) Semiconductor device
JPS56105475A (en) Coating apparatus and method of substrate by cathode spattering and use
Bringmann et al. Apparatus for Coating a Substrate by Plasma-Chemical Vapour Deposition or Cathodic Sputtering and Process Using the Apparatus
GB1177302A (en) Improvements in or relating to Grid Electrodes
JPS62174383A (ja) 薄膜堆積装置
JPS6010619A (ja) グロ−放電による膜形成方法

Legal Events

Date Code Title Description
ST Notification of lapse