FR2390828A1 - Solar cells with reduced incident surface - have parallel units on common semiconductor substrate and side walls (NL 29.11.77) - Google Patents

Solar cells with reduced incident surface - have parallel units on common semiconductor substrate and side walls (NL 29.11.77)

Info

Publication number
FR2390828A1
FR2390828A1 FR7719774A FR7719774A FR2390828A1 FR 2390828 A1 FR2390828 A1 FR 2390828A1 FR 7719774 A FR7719774 A FR 7719774A FR 7719774 A FR7719774 A FR 7719774A FR 2390828 A1 FR2390828 A1 FR 2390828A1
Authority
FR
France
Prior art keywords
side walls
semiconductor substrate
conductivity
common semiconductor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7719774A
Other languages
French (fr)
Other versions
FR2390828B3 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
Original Assignee
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/796,657 external-priority patent/US4131984A/en
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Publication of FR2390828A1 publication Critical patent/FR2390828A1/en
Application granted granted Critical
Publication of FR2390828B3 publication Critical patent/FR2390828B3/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

A photo-cell system can be used as a solar cell. The solar energy is concentrated on a reduced incidence surface, to increase the efficiency. The construction involves arranging a large number of parallel units (12, 34...) which are manufactured on a common semiconductor substrate. They have one type of conductivity. Each unit has parallel side walls to enclose a longitudinal surface exposed to the incident solar radiation. The side walls contain a zone (18, 46...) of a second type conductivity. There are separate conductive links (24) which produce Ohmic contact between the zones of the second type of conductivity and the material of the first type conductivity.
FR7719774A 1977-05-13 1977-06-28 Solar cells with reduced incident surface - have parallel units on common semiconductor substrate and side walls (NL 29.11.77) Granted FR2390828A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/796,657 US4131984A (en) 1976-05-26 1977-05-13 Method of making a high-intensity solid-state solar cell

Publications (2)

Publication Number Publication Date
FR2390828A1 true FR2390828A1 (en) 1978-12-08
FR2390828B3 FR2390828B3 (en) 1979-07-13

Family

ID=25168718

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7719774A Granted FR2390828A1 (en) 1977-05-13 1977-06-28 Solar cells with reduced incident surface - have parallel units on common semiconductor substrate and side walls (NL 29.11.77)

Country Status (2)

Country Link
FR (1) FR2390828A1 (en)
IL (1) IL52335A (en)

Also Published As

Publication number Publication date
IL52335A (en) 1979-09-30
IL52335A0 (en) 1977-08-31
FR2390828B3 (en) 1979-07-13

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Legal Events

Date Code Title Description
ST Notification of lapse