FR2385820A1 - Methode et dispositif d'attache electrochimique d'un materiau semi-conducteur - Google Patents
Methode et dispositif d'attache electrochimique d'un materiau semi-conducteurInfo
- Publication number
- FR2385820A1 FR2385820A1 FR7809455A FR7809455A FR2385820A1 FR 2385820 A1 FR2385820 A1 FR 2385820A1 FR 7809455 A FR7809455 A FR 7809455A FR 7809455 A FR7809455 A FR 7809455A FR 2385820 A1 FR2385820 A1 FR 2385820A1
- Authority
- FR
- France
- Prior art keywords
- nozzle
- electrode
- semiconductor material
- attack
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 239000003792 electrolyte Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
- H01L21/30635—Electrolytic etching of AIIIBV compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Die Bonding (AREA)
Abstract
L'invention concerne l'attaque d'un matériau composé d'arséniure de gallium et d'éléments des groupes III et V, notamment de l'aluminium. Une pièce 10 d'arséniure de gallium-aluminium est montée sur un substrat 1 relié à deux conducteurs 2 et au câble d'alimentation 3. Cet ensemble constitue une électrode du dispositif. L'autre électrode est constituée par le fil de platine 8 qui se termine dans la buse 6 sur le passage du jet d'attaque. L'électrolyte 11 est aspiré par le tube 13 sous l'effet de la pompe 7 et injecté dans la buse 6. Pour éviter l'influence de la lumière, le récipient 12 est placé dans une enceinte opaque. L'invention trouve une application, notamment, dans la fabrication des lasers à double hétérostructure.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB13958/77A GB1552268A (en) | 1977-04-01 | 1977-04-01 | Semiconductor etching |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2385820A1 true FR2385820A1 (fr) | 1978-10-27 |
FR2385820B1 FR2385820B1 (fr) | 1981-09-11 |
Family
ID=10032463
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7809455A Granted FR2385820A1 (fr) | 1977-04-01 | 1978-03-31 | Methode et dispositif d'attache electrochimique d'un materiau semi-conducteur |
Country Status (5)
Country | Link |
---|---|
US (1) | US4142953A (fr) |
JP (1) | JPS53123670A (fr) |
DE (1) | DE2811390A1 (fr) |
FR (1) | FR2385820A1 (fr) |
GB (1) | GB1552268A (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1558642A (en) * | 1977-04-01 | 1980-01-09 | Standard Telephones Cables Ltd | Injection lasers |
US4351706A (en) * | 1980-03-27 | 1982-09-28 | International Business Machines Corporation | Electrochemically eroding semiconductor device |
US4482442A (en) * | 1981-07-09 | 1984-11-13 | At&T Bell Laboratories | Photoelectrochemical etching of n-type gallium arsenide |
JPS59108183U (ja) * | 1983-01-07 | 1984-07-20 | タバイエスペツク株式会社 | 真空乾燥器 |
DE68928854T2 (de) * | 1988-12-21 | 1999-05-12 | Canon K.K., Tokio/Tokyo | Tintenstrahldruckvorrichtung mit Druckkopfabdeckung |
DE4012453A1 (de) * | 1990-04-19 | 1991-10-24 | Fraunhofer Ges Forschung | Verfahren zur oberflaechenbehandlung von photoempfindlichen verbindungshalbleitern |
US7150820B2 (en) * | 2003-09-22 | 2006-12-19 | Semitool, Inc. | Thiourea- and cyanide-free bath and process for electrolytic etching of gold |
US20050265936A1 (en) * | 2004-05-25 | 2005-12-01 | Knopf Michael A | Cleansing foaming sunscreen lotion |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1562282A (fr) * | 1967-02-25 | 1969-04-04 | ||
FR2044772A1 (fr) * | 1969-05-07 | 1971-02-26 | Philips Nv | |
US3959098A (en) * | 1973-03-12 | 1976-05-25 | Bell Telephone Laboratories, Incorporated | Electrolytic etching of III - V compound semiconductors |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL252383A (fr) * | 1960-06-07 | |||
US3184399A (en) * | 1960-09-23 | 1965-05-18 | Philco Corp | Electrolytic etching of semiconductors utilizing a.c. bias |
US3421987A (en) * | 1965-10-23 | 1969-01-14 | Gen Motors Corp | Electrochemical machining using a film forming electrolyte including amine alcohols |
US3413205A (en) * | 1966-02-28 | 1968-11-26 | Westinghouse Electric Corp | Electrolytic etching of capacitor metal |
US3791948A (en) * | 1971-11-01 | 1974-02-12 | Bell Telephone Labor Inc | Preferential etching in g a p |
-
1977
- 1977-04-01 GB GB13958/77A patent/GB1552268A/en not_active Expired
-
1978
- 1978-03-16 DE DE19782811390 patent/DE2811390A1/de not_active Withdrawn
- 1978-03-30 US US05/891,885 patent/US4142953A/en not_active Expired - Lifetime
- 1978-03-31 FR FR7809455A patent/FR2385820A1/fr active Granted
- 1978-03-31 JP JP3800478A patent/JPS53123670A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1562282A (fr) * | 1967-02-25 | 1969-04-04 | ||
FR2044772A1 (fr) * | 1969-05-07 | 1971-02-26 | Philips Nv | |
US3959098A (en) * | 1973-03-12 | 1976-05-25 | Bell Telephone Laboratories, Incorporated | Electrolytic etching of III - V compound semiconductors |
Non-Patent Citations (2)
Title |
---|
EXBK/71 * |
EXBK/75 * |
Also Published As
Publication number | Publication date |
---|---|
JPS53123670A (en) | 1978-10-28 |
FR2385820B1 (fr) | 1981-09-11 |
JPS5711496B2 (fr) | 1982-03-04 |
GB1552268A (en) | 1979-09-12 |
US4142953A (en) | 1979-03-06 |
DE2811390A1 (de) | 1978-10-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |