FR2385820A1 - Methode et dispositif d'attache electrochimique d'un materiau semi-conducteur - Google Patents

Methode et dispositif d'attache electrochimique d'un materiau semi-conducteur

Info

Publication number
FR2385820A1
FR2385820A1 FR7809455A FR7809455A FR2385820A1 FR 2385820 A1 FR2385820 A1 FR 2385820A1 FR 7809455 A FR7809455 A FR 7809455A FR 7809455 A FR7809455 A FR 7809455A FR 2385820 A1 FR2385820 A1 FR 2385820A1
Authority
FR
France
Prior art keywords
nozzle
electrode
semiconductor material
attack
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7809455A
Other languages
English (en)
Other versions
FR2385820B1 (fr
Inventor
David Francis Lovelace
Francis Lovelace David
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2385820A1 publication Critical patent/FR2385820A1/fr
Application granted granted Critical
Publication of FR2385820B1 publication Critical patent/FR2385820B1/fr
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/02Etching
    • C25F3/12Etching of semiconducting materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063Electrolytic etching
    • H01L21/30635Electrolytic etching of AIIIBV compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Die Bonding (AREA)

Abstract

L'invention concerne l'attaque d'un matériau composé d'arséniure de gallium et d'éléments des groupes III et V, notamment de l'aluminium. Une pièce 10 d'arséniure de gallium-aluminium est montée sur un substrat 1 relié à deux conducteurs 2 et au câble d'alimentation 3. Cet ensemble constitue une électrode du dispositif. L'autre électrode est constituée par le fil de platine 8 qui se termine dans la buse 6 sur le passage du jet d'attaque. L'électrolyte 11 est aspiré par le tube 13 sous l'effet de la pompe 7 et injecté dans la buse 6. Pour éviter l'influence de la lumière, le récipient 12 est placé dans une enceinte opaque. L'invention trouve une application, notamment, dans la fabrication des lasers à double hétérostructure.
FR7809455A 1977-04-01 1978-03-31 Methode et dispositif d'attache electrochimique d'un materiau semi-conducteur Granted FR2385820A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB13958/77A GB1552268A (en) 1977-04-01 1977-04-01 Semiconductor etching

Publications (2)

Publication Number Publication Date
FR2385820A1 true FR2385820A1 (fr) 1978-10-27
FR2385820B1 FR2385820B1 (fr) 1981-09-11

Family

ID=10032463

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7809455A Granted FR2385820A1 (fr) 1977-04-01 1978-03-31 Methode et dispositif d'attache electrochimique d'un materiau semi-conducteur

Country Status (5)

Country Link
US (1) US4142953A (fr)
JP (1) JPS53123670A (fr)
DE (1) DE2811390A1 (fr)
FR (1) FR2385820A1 (fr)
GB (1) GB1552268A (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1558642A (en) * 1977-04-01 1980-01-09 Standard Telephones Cables Ltd Injection lasers
US4351706A (en) * 1980-03-27 1982-09-28 International Business Machines Corporation Electrochemically eroding semiconductor device
US4482442A (en) * 1981-07-09 1984-11-13 At&T Bell Laboratories Photoelectrochemical etching of n-type gallium arsenide
JPS59108183U (ja) * 1983-01-07 1984-07-20 タバイエスペツク株式会社 真空乾燥器
DE68928854T2 (de) * 1988-12-21 1999-05-12 Canon K.K., Tokio/Tokyo Tintenstrahldruckvorrichtung mit Druckkopfabdeckung
DE4012453A1 (de) * 1990-04-19 1991-10-24 Fraunhofer Ges Forschung Verfahren zur oberflaechenbehandlung von photoempfindlichen verbindungshalbleitern
US7150820B2 (en) * 2003-09-22 2006-12-19 Semitool, Inc. Thiourea- and cyanide-free bath and process for electrolytic etching of gold
US20050265936A1 (en) * 2004-05-25 2005-12-01 Knopf Michael A Cleansing foaming sunscreen lotion

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1562282A (fr) * 1967-02-25 1969-04-04
FR2044772A1 (fr) * 1969-05-07 1971-02-26 Philips Nv
US3959098A (en) * 1973-03-12 1976-05-25 Bell Telephone Laboratories, Incorporated Electrolytic etching of III - V compound semiconductors

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL252383A (fr) * 1960-06-07
US3184399A (en) * 1960-09-23 1965-05-18 Philco Corp Electrolytic etching of semiconductors utilizing a.c. bias
US3421987A (en) * 1965-10-23 1969-01-14 Gen Motors Corp Electrochemical machining using a film forming electrolyte including amine alcohols
US3413205A (en) * 1966-02-28 1968-11-26 Westinghouse Electric Corp Electrolytic etching of capacitor metal
US3791948A (en) * 1971-11-01 1974-02-12 Bell Telephone Labor Inc Preferential etching in g a p

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1562282A (fr) * 1967-02-25 1969-04-04
FR2044772A1 (fr) * 1969-05-07 1971-02-26 Philips Nv
US3959098A (en) * 1973-03-12 1976-05-25 Bell Telephone Laboratories, Incorporated Electrolytic etching of III - V compound semiconductors

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/71 *
EXBK/75 *

Also Published As

Publication number Publication date
JPS53123670A (en) 1978-10-28
FR2385820B1 (fr) 1981-09-11
JPS5711496B2 (fr) 1982-03-04
GB1552268A (en) 1979-09-12
US4142953A (en) 1979-03-06
DE2811390A1 (de) 1978-10-05

Similar Documents

Publication Publication Date Title
FR2385820A1 (fr) Methode et dispositif d'attache electrochimique d'un materiau semi-conducteur
JPS5746669B2 (fr)
JPS57130490A (en) Semiconductor laser device
US4007097A (en) Process for selectively applying a metal coating to the metallic parts of elements which pass through an insulator
JPS5632749A (en) Manufacture of semiconductor device
JPS5464984A (en) Semiconductor laser device
JPS57111076A (en) Semiconductor light-emitting device
JPS57166078A (en) Semiconductor device
JPS5626673A (en) Continuous immersion soldering method
JPS5760844A (en) Semiconductor device
JPS57178387A (en) Indicator for luminescence and its manufacture
JPS54162471A (en) Semiconductor device
JPS5758370A (en) Photo device
JPS5793535A (en) Semiconductor device
JPS5748253A (en) Lead frame for semiconductor device
JPS5713762A (en) Light energized semiconductor device
Bertel et al. R ratio influence and overload effects on fatigue crack mechanisms
JPS57120387A (en) Light emitting semiconductor device
JPH0661395A (ja) 半導体装置のアウターリード部のメッキ方法ならびにメッキ装置及びこれらを用いて製造した半導体装置
KR820000468Y1 (ko) 반도체 장치
JPS5365685A (en) Piezoelectric oscillator
JPS57166088A (en) Electrode of luminus diode
JPS5713756A (en) Electrode for semiconductor device
JPS5463687A (en) Semiconductor light source device
JPS57186382A (en) Semiconductor element

Legal Events

Date Code Title Description
ST Notification of lapse