FR2380637A1 - Procede de traitement de circuits integres cmos et circuits obtenus - Google Patents
Procede de traitement de circuits integres cmos et circuits obtenusInfo
- Publication number
- FR2380637A1 FR2380637A1 FR7803655A FR7803655A FR2380637A1 FR 2380637 A1 FR2380637 A1 FR 2380637A1 FR 7803655 A FR7803655 A FR 7803655A FR 7803655 A FR7803655 A FR 7803655A FR 2380637 A1 FR2380637 A1 FR 2380637A1
- Authority
- FR
- France
- Prior art keywords
- islands
- insulating material
- sapphire substrate
- sepd
- same level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000011810 insulating material Substances 0.000 title abstract 3
- 229910052594 sapphire Inorganic materials 0.000 title abstract 3
- 239000010980 sapphire Substances 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 230000000873 masking effect Effects 0.000 abstract 2
- 230000000295 complement effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
a. Procédé de traitement de circuits intégrés CMOS et circuits obtenus. b. Procédé caractérisé en ce qu'on forme un masque sur un matériau semi-conducteur d'un premier matériau isolant électriquement, on oxyde les parties exposées du matériau semi-conducteur jusqu'à la surface du premier matériau isolant électriquement, on masque la structure, on développe de l'oxyde de porte sur la surface semi-conductrice, on forme les connexions métalliques sur les surfaces séparées et on réalise une couche conductrice recouvrant l'oxyde. c. L'invention s'applique notamment à la réalisation de circuits intégrés de type CMOS.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US76913877A | 1977-02-15 | 1977-02-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2380637A1 true FR2380637A1 (fr) | 1978-09-08 |
Family
ID=25084568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7803655A Withdrawn FR2380637A1 (fr) | 1977-02-15 | 1978-02-09 | Procede de traitement de circuits integres cmos et circuits obtenus |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS53100784A (fr) |
DE (1) | DE2806410A1 (fr) |
FR (1) | FR2380637A1 (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996029733A1 (fr) * | 1995-03-21 | 1996-09-26 | Peregrine Semiconductor Corp. | Reglage de tranche dans un substrat en silicium sur isolant |
US5864162A (en) * | 1993-07-12 | 1999-01-26 | Peregrine Seimconductor Corporation | Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire |
US5930638A (en) * | 1993-07-12 | 1999-07-27 | Peregrine Semiconductor Corp. | Method of making a low parasitic resistor on ultrathin silicon on insulator |
US5973363A (en) * | 1993-07-12 | 1999-10-26 | Peregrine Semiconductor Corp. | CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator |
US5973382A (en) * | 1993-07-12 | 1999-10-26 | Peregrine Semiconductor Corporation | Capacitor on ultrathin semiconductor on insulator |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10029288A1 (de) * | 2000-06-14 | 2002-01-03 | Infineon Technologies Ag | Verfahren zur Herstellung einer planaren Maske auf topologiehaltigen Oberflächen |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1160744A (en) * | 1965-11-05 | 1969-08-06 | Plessey Co Ltd | Improvements in or relating to Semiconductor Devices |
US3740280A (en) * | 1971-05-14 | 1973-06-19 | Rca Corp | Method of making semiconductor device |
US3865653A (en) * | 1971-10-12 | 1975-02-11 | Karl Goser | Logic circuit having a switching transistor and a load transistor, in particular for a semiconductor storage element |
DE2446558A1 (de) * | 1974-09-30 | 1976-04-01 | Siemens Ag | Verfahren zur herstellung von komplementaer-mis schaltungen |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4917069A (fr) * | 1972-06-10 | 1974-02-15 | ||
JPS504511A (fr) * | 1972-06-15 | 1975-01-17 | ||
JPS567315B2 (fr) * | 1973-07-30 | 1981-02-17 | ||
DE2344320C2 (de) * | 1973-09-03 | 1975-06-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Kompensation von Grenzflächenladungen bei epitaktisch auf ein Substrat aufgewachsenen Siliziumdünnschichten |
JPS50151480A (fr) * | 1974-05-24 | 1975-12-05 |
-
1978
- 1978-02-09 FR FR7803655A patent/FR2380637A1/fr not_active Withdrawn
- 1978-02-14 JP JP1505078A patent/JPS53100784A/ja active Granted
- 1978-02-15 DE DE19782806410 patent/DE2806410A1/de not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1160744A (en) * | 1965-11-05 | 1969-08-06 | Plessey Co Ltd | Improvements in or relating to Semiconductor Devices |
US3740280A (en) * | 1971-05-14 | 1973-06-19 | Rca Corp | Method of making semiconductor device |
US3865653A (en) * | 1971-10-12 | 1975-02-11 | Karl Goser | Logic circuit having a switching transistor and a load transistor, in particular for a semiconductor storage element |
DE2446558A1 (de) * | 1974-09-30 | 1976-04-01 | Siemens Ag | Verfahren zur herstellung von komplementaer-mis schaltungen |
Non-Patent Citations (2)
Title |
---|
ABJP/77 * |
EXBK/73 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5864162A (en) * | 1993-07-12 | 1999-01-26 | Peregrine Seimconductor Corporation | Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire |
US5863823A (en) * | 1993-07-12 | 1999-01-26 | Peregrine Semiconductor Corporation | Self-aligned edge control in silicon on insulator |
US5930638A (en) * | 1993-07-12 | 1999-07-27 | Peregrine Semiconductor Corp. | Method of making a low parasitic resistor on ultrathin silicon on insulator |
US5973363A (en) * | 1993-07-12 | 1999-10-26 | Peregrine Semiconductor Corp. | CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator |
US5973382A (en) * | 1993-07-12 | 1999-10-26 | Peregrine Semiconductor Corporation | Capacitor on ultrathin semiconductor on insulator |
WO1996029733A1 (fr) * | 1995-03-21 | 1996-09-26 | Peregrine Semiconductor Corp. | Reglage de tranche dans un substrat en silicium sur isolant |
Also Published As
Publication number | Publication date |
---|---|
DE2806410A1 (de) | 1978-08-17 |
JPS5551343B2 (fr) | 1980-12-23 |
JPS53100784A (en) | 1978-09-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse | ||
AR | Application made for restoration | ||
BR | Restoration of rights | ||
ST | Notification of lapse |