FR2378355A1 - Film de transition, mince, entre un film d'aluminium et un film indium-cuivre - Google Patents
Film de transition, mince, entre un film d'aluminium et un film indium-cuivreInfo
- Publication number
- FR2378355A1 FR2378355A1 FR7737554A FR7737554A FR2378355A1 FR 2378355 A1 FR2378355 A1 FR 2378355A1 FR 7737554 A FR7737554 A FR 7737554A FR 7737554 A FR7737554 A FR 7737554A FR 2378355 A1 FR2378355 A1 FR 2378355A1
- Authority
- FR
- France
- Prior art keywords
- film
- thin
- indium
- copper
- transition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052782 aluminium Inorganic materials 0.000 title abstract 2
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 title abstract 2
- 230000007704 transition Effects 0.000 title 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 241001453233 Doodia media Species 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 230000001052 transient effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
a. Moyen de connection dans le domaine des circuits réalisés en film mince, dans lequel les contacts en indium-cuivre touchent les sources et drains des transistors. b. Moyen caractérisé par des surfaces transitoires en forme de film mince en cuivre, entre les conducteurs en aluminium et les contacts de source et de drain. c. L'invention concerne la fabrication des semi-conducteurs.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/762,546 US4115799A (en) | 1977-01-26 | 1977-01-26 | Thin film copper transition between aluminum and indium copper films |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2378355A1 true FR2378355A1 (fr) | 1978-08-18 |
Family
ID=25065370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7737554A Withdrawn FR2378355A1 (fr) | 1977-01-26 | 1977-12-13 | Film de transition, mince, entre un film d'aluminium et un film indium-cuivre |
Country Status (6)
Country | Link |
---|---|
US (1) | US4115799A (fr) |
JP (1) | JPS5394188A (fr) |
DE (1) | DE2802822A1 (fr) |
FR (1) | FR2378355A1 (fr) |
GB (1) | GB1558055A (fr) |
NL (1) | NL7714469A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2474763A1 (fr) * | 1979-12-13 | 1981-07-31 | Energy Conversion Devices Inc | Transistor a film mince |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58140781A (ja) * | 1982-02-17 | 1983-08-20 | 株式会社日立製作所 | 画像表示装置 |
US5019807A (en) * | 1984-07-25 | 1991-05-28 | Staplevision, Inc. | Display screen |
FR2593630B1 (fr) * | 1986-01-27 | 1988-03-18 | Maurice Francois | Ecran d'affichage a matrice active a resistance de drain et procedes de fabrication de cet ecran |
JPS6319876A (ja) * | 1986-07-11 | 1988-01-27 | Fuji Xerox Co Ltd | 薄膜トランジスタ装置 |
US5166085A (en) * | 1987-09-09 | 1992-11-24 | Casio Computer Co., Ltd. | Method of manufacturing a thin film transistor |
US5229644A (en) * | 1987-09-09 | 1993-07-20 | Casio Computer Co., Ltd. | Thin film transistor having a transparent electrode and substrate |
US5327001A (en) * | 1987-09-09 | 1994-07-05 | Casio Computer Co., Ltd. | Thin film transistor array having single light shield layer over transistors and gate and drain lines |
US5032883A (en) * | 1987-09-09 | 1991-07-16 | Casio Computer Co., Ltd. | Thin film transistor and method of manufacturing the same |
US4990460A (en) * | 1989-01-27 | 1991-02-05 | Nec Corporation | Fabrication method for thin film field effect transistor array suitable for liquid crystal display |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3313959A (en) * | 1966-08-08 | 1967-04-11 | Hughes Aircraft Co | Thin-film resonance device |
GB1161647A (en) * | 1967-08-04 | 1969-08-13 | Rca Corp | Thin Film Field-Effect Solid State Devices |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3483038A (en) * | 1967-01-05 | 1969-12-09 | Rca Corp | Integrated array of thin-film photovoltaic cells and method of making same |
JPS4913914B1 (fr) * | 1969-12-25 | 1974-04-03 | ||
US3840695A (en) * | 1972-10-10 | 1974-10-08 | Westinghouse Electric Corp | Liquid crystal image display panel with integrated addressing circuitry |
US4065781A (en) * | 1974-06-21 | 1977-12-27 | Westinghouse Electric Corporation | Insulated-gate thin film transistor with low leakage current |
US4000842A (en) * | 1975-06-02 | 1977-01-04 | National Semiconductor Corporation | Copper-to-gold thermal compression gang bonding of interconnect leads to semiconductive devices |
US4040073A (en) * | 1975-08-29 | 1977-08-02 | Westinghouse Electric Corporation | Thin film transistor and display panel using the transistor |
-
1977
- 1977-01-26 US US05/762,546 patent/US4115799A/en not_active Expired - Lifetime
- 1977-12-13 FR FR7737554A patent/FR2378355A1/fr not_active Withdrawn
- 1977-12-28 NL NL7714469A patent/NL7714469A/xx not_active Application Discontinuation
-
1978
- 1978-01-09 GB GB727/78A patent/GB1558055A/en not_active Expired
- 1978-01-23 DE DE19782802822 patent/DE2802822A1/de active Granted
- 1978-01-25 JP JP628978A patent/JPS5394188A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3313959A (en) * | 1966-08-08 | 1967-04-11 | Hughes Aircraft Co | Thin-film resonance device |
GB1161647A (en) * | 1967-08-04 | 1969-08-13 | Rca Corp | Thin Film Field-Effect Solid State Devices |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2474763A1 (fr) * | 1979-12-13 | 1981-07-31 | Energy Conversion Devices Inc | Transistor a film mince |
Also Published As
Publication number | Publication date |
---|---|
US4115799A (en) | 1978-09-19 |
NL7714469A (nl) | 1978-07-28 |
JPS628953B2 (fr) | 1987-02-25 |
JPS5394188A (en) | 1978-08-17 |
DE2802822C2 (fr) | 1987-08-13 |
DE2802822A1 (de) | 1978-07-27 |
GB1558055A (en) | 1979-12-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse | ||
AR | Application made for restoration | ||
DI | Inadmissibility of an action of restoration |