FR2360998A1 - PROCESS FOR REALIZING PHOTODIODES WITH EARLIER ILLUMINATION - Google Patents
PROCESS FOR REALIZING PHOTODIODES WITH EARLIER ILLUMINATIONInfo
- Publication number
- FR2360998A1 FR2360998A1 FR7724317A FR7724317A FR2360998A1 FR 2360998 A1 FR2360998 A1 FR 2360998A1 FR 7724317 A FR7724317 A FR 7724317A FR 7724317 A FR7724317 A FR 7724317A FR 2360998 A1 FR2360998 A1 FR 2360998A1
- Authority
- FR
- France
- Prior art keywords
- photodiodes
- type
- realizing
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005286 illumination Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
L'invention concerne la réalisation de photodiodes au silicium à éclairement antérieur. Elle se rapporte à un procédé de réalisation de photodiodes ayant une structure n**+-p- pi -p**+ comprenant un substrat p**+ 10, une couche épitaxiale 12 de silicium de type pi , une couche 14 de type p, une couche n**+16, un anneau 18 de garde de type n et un canal d'arrêt 22 de type p. Des contacts sont formés avec le substrat, l'anneau de et le canal d'arrêt. Application à la réalisation de photodiodes à avalanche destinées à des photodétecteurs de systèmes de communications optiques.The invention relates to the production of silicon photodiodes with prior illumination. It relates to a method for producing photodiodes having an n ** + - p- pi -p ** + structure comprising a p ** + substrate 10, an epitaxial layer 12 of pi-type silicon, a layer 14 of p-type. p, an n ** + layer 16, an n-type guard ring 18, and a p-type stop channel 22. Contacts are formed with the substrate, the ring and the stop channel. Application to the production of avalanche photodiodes intended for photodetectors of optical communications systems.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US71239276A | 1976-08-06 | 1976-08-06 | |
US05/793,493 US4127932A (en) | 1976-08-06 | 1977-05-04 | Method of fabricating silicon photodiodes |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2360998A1 true FR2360998A1 (en) | 1978-03-03 |
FR2360998B1 FR2360998B1 (en) | 1982-04-09 |
Family
ID=27108828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7724317A Granted FR2360998A1 (en) | 1976-08-06 | 1977-08-05 | PROCESS FOR REALIZING PHOTODIODES WITH EARLIER ILLUMINATION |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5341193A (en) |
CA (1) | CA1078948A (en) |
DE (1) | DE2734726C2 (en) |
FR (1) | FR2360998A1 (en) |
GB (1) | GB1561953A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0142316A2 (en) * | 1983-11-10 | 1985-05-22 | AT&T Corp. | Improved p-i-n- and avalanche photodiodes |
FR2641647A1 (en) * | 1989-01-12 | 1990-07-13 | Rca Inc | AVALANCHE PHOTODIODE WITH SILICON WITH LOW NOISE OF MULTIPLICATION |
US8664031B2 (en) | 2000-11-13 | 2014-03-04 | Sony Corporation | Method of manufacturing photodiode intergrated chip |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3001899A1 (en) * | 1980-01-19 | 1981-07-23 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Planar phototransistor with concentric zones - has emitter zone, filling majority of base zone except base contacting region |
JPS5789271A (en) * | 1980-11-25 | 1982-06-03 | Moririka:Kk | Compound semiconductor element |
JPS57104275A (en) * | 1980-12-19 | 1982-06-29 | Nec Corp | Light receiving element |
CN114975672A (en) * | 2021-02-26 | 2022-08-30 | 中国科学院半导体研究所 | Structure and preparation method of back-incident near-infrared enhanced silicon avalanche photodetector |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3244567A (en) * | 1962-09-10 | 1966-04-05 | Trw Semiconductors Inc | Impurity diffusion method |
US3534231A (en) * | 1968-02-15 | 1970-10-13 | Texas Instruments Inc | Low bulk leakage current avalanche photodiode |
US3886579A (en) * | 1972-07-28 | 1975-05-27 | Hitachi Ltd | Avalanche photodiode |
JPS49116957A (en) * | 1972-10-25 | 1974-11-08 | ||
JPS5031777A (en) * | 1973-07-21 | 1975-03-28 |
-
1977
- 1977-06-28 CA CA281,617A patent/CA1078948A/en not_active Expired
- 1977-08-02 DE DE19772734726 patent/DE2734726C2/en not_active Expired
- 1977-08-05 GB GB3288177A patent/GB1561953A/en not_active Expired
- 1977-08-05 FR FR7724317A patent/FR2360998A1/en active Granted
- 1977-08-06 JP JP9376277A patent/JPS5341193A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0142316A2 (en) * | 1983-11-10 | 1985-05-22 | AT&T Corp. | Improved p-i-n- and avalanche photodiodes |
WO1985002296A1 (en) * | 1983-11-10 | 1985-05-23 | American Telephone & Telegraph Company | IMPROVED p-i-n AND AVALANCHE PHOTODIODES |
EP0142316A3 (en) * | 1983-11-10 | 1985-07-10 | AT&T Corp. | Improved p-i-n- and avalanche photodiodes |
FR2641647A1 (en) * | 1989-01-12 | 1990-07-13 | Rca Inc | AVALANCHE PHOTODIODE WITH SILICON WITH LOW NOISE OF MULTIPLICATION |
US8664031B2 (en) | 2000-11-13 | 2014-03-04 | Sony Corporation | Method of manufacturing photodiode intergrated chip |
Also Published As
Publication number | Publication date |
---|---|
GB1561953A (en) | 1980-03-05 |
DE2734726A1 (en) | 1978-02-09 |
FR2360998B1 (en) | 1982-04-09 |
JPS5341193A (en) | 1978-04-14 |
JPS6155791B2 (en) | 1986-11-29 |
DE2734726C2 (en) | 1987-04-16 |
CA1078948A (en) | 1980-06-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6015721A (en) | Method of manufacturing an avalanche photodiode | |
JPH02159775A (en) | Semiconductor photodetector and manufacture thereof | |
EP0843159A3 (en) | Opto-electronic scale-reading apparatus | |
KR900000209B1 (en) | Manufacture of semiconductor a photo diode and avalanche photodiode | |
KR960030452A (en) | Compound semiconductor light receiving element and manufacturing method thereof | |
FR2360998A1 (en) | PROCESS FOR REALIZING PHOTODIODES WITH EARLIER ILLUMINATION | |
JPS6432694A (en) | Manufacture of semiconductor device in which laser diode and photodiode with expanded light receiving plane are unified | |
JPS5848479A (en) | Semiconductor light detector | |
JPS6262564A (en) | Semiconductor photodetector | |
JPS6032812B2 (en) | photodetector | |
JPS5654080A (en) | Avalanche photodiode | |
JPS61289678A (en) | Avalanche photo diode | |
GB1441261A (en) | Semiconductor avalanche photodiodes | |
JPS60202971A (en) | Semiconductor light emitting device | |
JPS6180875A (en) | Semiconductor device | |
JPS63239872A (en) | Semiconductor photodetector | |
KR890003418B1 (en) | Manufacturing method of semiconductor light emitting diode | |
JPS60254674A (en) | Semiconductor photo receptor | |
JPS61220480A (en) | Semiconductor light receiving device | |
JPH0383382A (en) | Semiconductor photodetector and manufacture thereof | |
KR890004446A (en) | Method of manufacturing an optical device array using selective epitaxial growth | |
JPS5710987A (en) | Silicon avalanche photo diode | |
JPS627176A (en) | Semiconductor photodetector | |
JPS6133272B2 (en) | ||
JPS61226952A (en) | Monolithic integrated light-receiving element |