FR2357067A1 - Procede de formation de regions de carbure de silicium monocristallin sur des substrats en silicium et dispositifs semi-conducteurs en resultant - Google Patents

Procede de formation de regions de carbure de silicium monocristallin sur des substrats en silicium et dispositifs semi-conducteurs en resultant

Info

Publication number
FR2357067A1
FR2357067A1 FR7716061A FR7716061A FR2357067A1 FR 2357067 A1 FR2357067 A1 FR 2357067A1 FR 7716061 A FR7716061 A FR 7716061A FR 7716061 A FR7716061 A FR 7716061A FR 2357067 A1 FR2357067 A1 FR 2357067A1
Authority
FR
France
Prior art keywords
silicon carbide
silicon
regions
result
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7716061A
Other languages
English (en)
Other versions
FR2357067B1 (fr
Inventor
John L Deines
San-Mei Ku
Michael R Poponiak
Paul J Tsang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2357067A1 publication Critical patent/FR2357067A1/fr
Application granted granted Critical
Publication of FR2357067B1 publication Critical patent/FR2357067B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

Procédé de formation de régions de carbure de silicium monocristallin sur des substrats en silicium et dispositifs en résultant. Un substrat silicium 22 de type P est revêtu par une couche épitaxiale de type N 24. Des régions d'isolement de type P sont formées, puis anodisées pour transformer in situ le silicium monocristallin en silicium poreux. Après chauffage et exposition à un gaz contenant des hydrocarbures tels que le méthane, l'éthane, etc. la partie basse de ces régions est transformée en carbure de silicium monocristallin 56 et la partie haute en carbure de silicium polycristallin 58 cette dernière peut être éliminée ou conservee pour assurer l'isolation électrique du transistor 66. Application à la fabrication des dispositifs intégrés à semi-conducteurs.
FR7716061A 1976-06-30 1977-05-18 Procede de formation de regions de carbure de silicium monocristallin sur des substrats en silicium et dispositifs semi-conducteurs en resultant Granted FR2357067A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/701,452 US4028149A (en) 1976-06-30 1976-06-30 Process for forming monocrystalline silicon carbide on silicon substrates

Publications (2)

Publication Number Publication Date
FR2357067A1 true FR2357067A1 (fr) 1978-01-27
FR2357067B1 FR2357067B1 (fr) 1980-05-09

Family

ID=24817441

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7716061A Granted FR2357067A1 (fr) 1976-06-30 1977-05-18 Procede de formation de regions de carbure de silicium monocristallin sur des substrats en silicium et dispositifs semi-conducteurs en resultant

Country Status (5)

Country Link
US (1) US4028149A (fr)
JP (1) JPS533164A (fr)
DE (1) DE2727557A1 (fr)
FR (1) FR2357067A1 (fr)
GB (1) GB1522293A (fr)

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US4123571A (en) * 1977-09-08 1978-10-31 International Business Machines Corporation Method for forming smooth self limiting and pin hole free SiC films on Si
JPS5953999B2 (ja) * 1978-04-24 1984-12-27 株式会社大林組 岩盤用溝孔掘削方法
US4180416A (en) * 1978-09-27 1979-12-25 International Business Machines Corporation Thermal migration-porous silicon technique for forming deep dielectric isolation
US4459181A (en) * 1982-09-23 1984-07-10 Eaton Corporation Semiconductor pattern definition by selective anodization
US4525429A (en) * 1983-06-08 1985-06-25 Kennecott Corporation Porous semiconductor dopant carriers
JPS60140756A (ja) * 1983-12-27 1985-07-25 Sharp Corp 炭化珪素バイポ−ラトランジスタの製造方法
US4762806A (en) * 1983-12-23 1988-08-09 Sharp Kabushiki Kaisha Process for producing a SiC semiconductor device
US4524237A (en) * 1984-02-08 1985-06-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Increased voltage photovoltaic cell
JPS61291494A (ja) * 1985-06-19 1986-12-22 Sharp Corp 炭化珪素単結晶基板の製造方法
US4643804A (en) * 1985-07-25 1987-02-17 At&T Bell Laboratories Forming thick dielectric at the bottoms of trenches utilized in integrated-circuit devices
US4806996A (en) * 1986-04-10 1989-02-21 American Telephone And Telegraph Company, At&T Bell Laboratories Dislocation-free epitaxial layer on a lattice-mismatched porous or otherwise submicron patterned single crystal substrate
JPS63132452A (ja) * 1986-11-24 1988-06-04 Mitsubishi Electric Corp パタ−ン形成方法
US4972250A (en) * 1987-03-02 1990-11-20 Microwave Technology, Inc. Protective coating useful as passivation layer for semiconductor devices
US5087959A (en) * 1987-03-02 1992-02-11 Microwave Technology, Inc. Protective coating useful as a passivation layer for semiconductor devices
US5373171A (en) * 1987-03-12 1994-12-13 Sumitomo Electric Industries, Ltd. Thin film single crystal substrate
CA1313571C (fr) * 1987-10-26 1993-02-09 John W. Palmour Transistor mos a effet de champ en carbure de silicium
JPH067594B2 (ja) * 1987-11-20 1994-01-26 富士通株式会社 半導体基板の製造方法
US4982263A (en) * 1987-12-21 1991-01-01 Texas Instruments Incorporated Anodizable strain layer for SOI semiconductor structures
US5200805A (en) * 1987-12-28 1993-04-06 Hughes Aircraft Company Silicon carbide:metal carbide alloy semiconductor and method of making the same
US5082695A (en) * 1988-03-08 1992-01-21 501 Fujitsu Limited Method of fabricating an x-ray exposure mask
US5332697A (en) * 1989-05-31 1994-07-26 Smith Rosemary L Formation of silicon nitride by nitridation of porous silicon
US5156896A (en) * 1989-08-03 1992-10-20 Alps Electric Co., Ltd. Silicon substrate having porous oxidized silicon layers and its production method
EP0466109B1 (fr) * 1990-07-10 1994-11-02 Sumitomo Metal Industries, Ltd. Procédé pour la production d'un complexe à base de carbure de silicium
DE4220472C2 (de) * 1992-03-05 2002-08-22 Industrieanlagen Betriebsges Verfahren zur Herstellung von Leichtbaureflektoren mittels Silicium-Wafern
US5565052A (en) * 1992-03-05 1996-10-15 Industrieanlagen-Betriebsgesellschaft Gmbh Method for the production of a reflector
US5298767A (en) * 1992-10-06 1994-03-29 Kulite Semiconductor Products, Inc. Porous silicon carbide (SiC) semiconductor device
US5494859A (en) * 1994-02-04 1996-02-27 Lsi Logic Corporation Low dielectric constant insulation layer for integrated circuit structure and method of making same
US5556530A (en) * 1995-06-05 1996-09-17 Walter J. Finklestein Flat panel display having improved electrode array
FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
SE9602745D0 (sv) * 1996-07-11 1996-07-11 Abb Research Ltd A method for producing a channel region layer in a SiC-layer for a voltage controlled semiconductor device
FR2773261B1 (fr) * 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
DE19838945A1 (de) * 1998-08-27 2000-03-09 Bosch Gmbh Robert Verfahren zur Herstellung einer defektarmen, einkristallinen Silizium-Carbid-Schicht
US6303508B1 (en) * 1999-12-16 2001-10-16 Philips Electronics North America Corporation Superior silicon carbide integrated circuits and method of fabricating
FR2811807B1 (fr) * 2000-07-12 2003-07-04 Commissariat Energie Atomique Procede de decoupage d'un bloc de materiau et de formation d'un film mince
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
FR2830983B1 (fr) * 2001-10-11 2004-05-14 Commissariat Energie Atomique Procede de fabrication de couches minces contenant des microcomposants
FR2847075B1 (fr) * 2002-11-07 2005-02-18 Commissariat Energie Atomique Procede de formation d'une zone fragile dans un substrat par co-implantation
US7176108B2 (en) * 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
FR2848336B1 (fr) * 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
GB0229212D0 (en) * 2002-12-14 2003-01-22 Koninkl Philips Electronics Nv Method of manufacture of a trench semiconductor device
FR2856844B1 (fr) * 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7772087B2 (en) * 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
WO2005087983A2 (fr) * 2004-03-05 2005-09-22 University Of North Carolina At Charlotte Procedes de substitution pour la fabrication d'heterostructures et de substrats faits de composes au silicium et d'alliages
US8378382B2 (en) * 2004-12-30 2013-02-19 Macronix International Co., Ltd. High aspect-ratio PN-junction and method for manufacturing the same
FR2886051B1 (fr) 2005-05-20 2007-08-10 Commissariat Energie Atomique Procede de detachement d'un film mince
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FR2889887B1 (fr) * 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2899378B1 (fr) * 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2925221B1 (fr) * 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
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FR1440227A (fr) * 1965-04-05 1966-05-27 Halbleiterwerk Frankfurt Oder Procédé de production de couches de carbure de silicium de grande pureté pour des semi-conducteurs
FR2018111A1 (fr) * 1968-09-14 1970-05-29 Philips Nv

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Also Published As

Publication number Publication date
JPS533164A (en) 1978-01-12
FR2357067B1 (fr) 1980-05-09
US4028149A (en) 1977-06-07
DE2727557A1 (de) 1978-01-12
GB1522293A (en) 1978-08-23

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