GB1162565A - Improvements in and relating to Semiconductor Structures - Google Patents

Improvements in and relating to Semiconductor Structures

Info

Publication number
GB1162565A
GB1162565A GB1597467A GB1597467A GB1162565A GB 1162565 A GB1162565 A GB 1162565A GB 1597467 A GB1597467 A GB 1597467A GB 1597467 A GB1597467 A GB 1597467A GB 1162565 A GB1162565 A GB 1162565A
Authority
GB
United Kingdom
Prior art keywords
semi
layers
conductor
devices
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1597467A
Inventor
John Blake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM United Kingdom Ltd
Original Assignee
IBM United Kingdom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM United Kingdom Ltd filed Critical IBM United Kingdom Ltd
Priority to GB1597467A priority Critical patent/GB1162565A/en
Priority to FR1559209D priority patent/FR1559209A/fr
Priority to CH381568A priority patent/CH468080A/en
Priority to DE19681764106 priority patent/DE1764106A1/en
Priority to NL6804786A priority patent/NL6804786A/xx
Priority to SE464568A priority patent/SE331720B/xx
Priority to BE713333D priority patent/BE713333A/xx
Publication of GB1162565A publication Critical patent/GB1162565A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221—Three dimensional integrated circuits stacked in different levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)

Abstract

1,162,565. Semi-conductor devices. IBM UNITED KINGDOM Ltd. 7 April, 1967, No. 15974/67. Heading H1K. A semi-conductor structure comprises a wafer having an isolating barrier electrically separating the opposite major surfaces and semiconductor devices formed in both major surfaces of the wafer. The isolating barrier may be a pair of PN junctions or one or more layers of insulating material. The structure may comprise an integrated circuit, or may comprise a plurality of individual devices which are separated into dice, each having a device on both faces to increase the yield of satisfactory units. In a first embodiment, N-type silicon epitaxial layers are grown on both faces of a P-type silicon substrate and P-type isolating regions are diffused through the epitaxial layers to divide them into regions in each of which a transistor, diode, resistor or other component may be produced. The transistors may be provided with highly conductive sub-collector regions by diffusing N+ type regions into the substrate before the epitaxial deposition. In a second embodiment, insulating layers of silicon carbide (SiC) are epitaxially grown on both faces of a semi-conductor wafer, layers of semi-conductor material are epitaxially grown on the SiC layers, channels are etched through the grown semi-conductor layers and are lined with insulating material, e.g. epitaxially grown SiC, or completely filled with dielectric material. Transistors and/or other devices are then formed in the isolated islands. In a first modification, the central isolation is provided by PN junctions and the lateral isolation is provided by channels filled with insulation material. In a second modification a layer of SiC and a semi-conductor layer are epitaxially deposited on only one face of a substrate, the devices being formed in the substrate and in the epitaxial semi-conductor layer. If a plurality of individual opposed pairs of devices are to be produced by dicing the wafer the lateral isolation is omitted. The structures can be contacted by mounting one face on a printed circuit and applying flying leads to the opposite face. A metallization pattern may be deposited simultaneously on both faces of the wafer.
GB1597467A 1967-04-07 1967-04-07 Improvements in and relating to Semiconductor Structures Expired GB1162565A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GB1597467A GB1162565A (en) 1967-04-07 1967-04-07 Improvements in and relating to Semiconductor Structures
FR1559209D FR1559209A (en) 1967-04-07 1968-02-23
CH381568A CH468080A (en) 1967-04-07 1968-03-13 Semiconductor device
DE19681764106 DE1764106A1 (en) 1967-04-07 1968-04-03 Semiconductor device
NL6804786A NL6804786A (en) 1967-04-07 1968-04-04
SE464568A SE331720B (en) 1967-04-07 1968-04-05
BE713333D BE713333A (en) 1967-04-07 1968-04-05

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1597467A GB1162565A (en) 1967-04-07 1967-04-07 Improvements in and relating to Semiconductor Structures

Publications (1)

Publication Number Publication Date
GB1162565A true GB1162565A (en) 1969-08-27

Family

ID=10068943

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1597467A Expired GB1162565A (en) 1967-04-07 1967-04-07 Improvements in and relating to Semiconductor Structures

Country Status (7)

Country Link
BE (1) BE713333A (en)
CH (1) CH468080A (en)
DE (1) DE1764106A1 (en)
FR (1) FR1559209A (en)
GB (1) GB1162565A (en)
NL (1) NL6804786A (en)
SE (1) SE331720B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
US4161743A (en) * 1977-03-28 1979-07-17 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat
US4224636A (en) * 1975-12-24 1980-09-23 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with thermally compensating SiO2 -silicate glass-SiC passivation layer

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6627953B1 (en) 1990-12-31 2003-09-30 Kopin Corporation High density electronic circuit modules
US6143582A (en) 1990-12-31 2000-11-07 Kopin Corporation High density electronic circuit modules
US5376561A (en) * 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4224636A (en) * 1975-12-24 1980-09-23 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with thermally compensating SiO2 -silicate glass-SiC passivation layer
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
US4161743A (en) * 1977-03-28 1979-07-17 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat

Also Published As

Publication number Publication date
CH468080A (en) 1969-01-31
DE1764106A1 (en) 1971-05-06
NL6804786A (en) 1968-10-08
SE331720B (en) 1971-01-11
BE713333A (en) 1968-08-16
FR1559209A (en) 1969-03-07

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee