FR2341206A1 - Transistor a haute frequence - Google Patents
Transistor a haute frequenceInfo
- Publication number
- FR2341206A1 FR2341206A1 FR7703758A FR7703758A FR2341206A1 FR 2341206 A1 FR2341206 A1 FR 2341206A1 FR 7703758 A FR7703758 A FR 7703758A FR 7703758 A FR7703758 A FR 7703758A FR 2341206 A1 FR2341206 A1 FR 2341206A1
- Authority
- FR
- France
- Prior art keywords
- high frequency
- frequency transistor
- transistor
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2605641A DE2605641C3 (de) | 1976-02-12 | 1976-02-12 | Hochfrequenztransistor und Verfahren zu seiner Herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2341206A1 true FR2341206A1 (fr) | 1977-09-09 |
FR2341206B1 FR2341206B1 (fr) | 1983-05-20 |
Family
ID=5969731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7703758A Granted FR2341206A1 (fr) | 1976-02-12 | 1977-02-10 | Transistor a haute frequence |
Country Status (6)
Country | Link |
---|---|
US (1) | US4110779A (fr) |
JP (1) | JPS5299078A (fr) |
DE (1) | DE2605641C3 (fr) |
FR (1) | FR2341206A1 (fr) |
GB (1) | GB1530010A (fr) |
IT (1) | IT1074663B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0017377A2 (fr) * | 1979-03-20 | 1980-10-15 | Fujitsu Limited | Procédé de fabrication de transistors bipolaires isolés |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7709363A (nl) * | 1977-08-25 | 1979-02-27 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd onder toepassing van een dergelijke werkwijze. |
US4228450A (en) * | 1977-10-25 | 1980-10-14 | International Business Machines Corporation | Buried high sheet resistance structure for high density integrated circuits with reach through contacts |
US4196440A (en) * | 1978-05-25 | 1980-04-01 | International Business Machines Corporation | Lateral PNP or NPN with a high gain |
US4677456A (en) * | 1979-05-25 | 1987-06-30 | Raytheon Company | Semiconductor structure and manufacturing method |
US4289550A (en) * | 1979-05-25 | 1981-09-15 | Raytheon Company | Method of forming closely spaced device regions utilizing selective etching and diffusion |
DE2922250A1 (de) * | 1979-05-31 | 1980-12-11 | Siemens Ag | Lichtsteuerbarer transistor |
US4261763A (en) * | 1979-10-01 | 1981-04-14 | Burroughs Corporation | Fabrication of integrated circuits employing only ion implantation for all dopant layers |
JPS57149770A (en) * | 1981-03-11 | 1982-09-16 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS5870570A (ja) * | 1981-09-28 | 1983-04-27 | Fujitsu Ltd | 半導体装置の製造方法 |
US4624046A (en) * | 1982-01-04 | 1986-11-25 | Fairchild Camera & Instrument Corp. | Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM |
US4519128A (en) * | 1983-10-05 | 1985-05-28 | International Business Machines Corporation | Method of making a trench isolated device |
US4547793A (en) * | 1983-12-27 | 1985-10-15 | International Business Machines Corporation | Trench-defined semiconductor structure |
US4725562A (en) * | 1986-03-27 | 1988-02-16 | International Business Machines Corporation | Method of making a contact to a trench isolated device |
IT1231913B (it) * | 1987-10-23 | 1992-01-15 | Sgs Microelettronica Spa | Procedimento di fabbricazione di transistori ad alta frequenza. |
SE461428B (sv) * | 1988-06-16 | 1990-02-12 | Ericsson Telefon Ab L M | Foerfarande foer att paa ett underlag av halvledarmaterial framstaella en bipolaer transistor eller en bipolaer transistor och en faelteffekttransistor eller en bipolaer transistor och en faelteffekttransistor med en komplementaer faelteffekttransistor och anordningar framstaellda enligt foerfarandena |
DE19962907A1 (de) | 1999-12-23 | 2001-07-05 | Basf Ag | Verfahren zur Herstellung von C¶10¶-C¶30¶-Alkenen durch partielle Hydrierung von Alkinen an Festbett-Palladium-Trägerkatalysatoren |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
FR2222757A1 (fr) * | 1973-03-19 | 1974-10-18 | Ericsson Telefon Ab L M | |
FR2258001A1 (fr) * | 1974-01-14 | 1975-08-08 | Western Electric Co |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4005453A (en) * | 1971-04-14 | 1977-01-25 | U.S. Philips Corporation | Semiconductor device with isolated circuit elements and method of making |
GB1457139A (en) * | 1973-09-27 | 1976-12-01 | Hitachi Ltd | Method of manufacturing semiconductor device |
JPS5214594B2 (fr) * | 1973-10-17 | 1977-04-22 |
-
1976
- 1976-02-12 DE DE2605641A patent/DE2605641C3/de not_active Expired
- 1976-11-05 GB GB46045/76A patent/GB1530010A/en not_active Expired
- 1976-12-13 US US05/749,609 patent/US4110779A/en not_active Expired - Lifetime
-
1977
- 1977-02-09 IT IT20093/77A patent/IT1074663B/it active
- 1977-02-10 FR FR7703758A patent/FR2341206A1/fr active Granted
- 1977-02-10 JP JP1403277A patent/JPS5299078A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
FR2222757A1 (fr) * | 1973-03-19 | 1974-10-18 | Ericsson Telefon Ab L M | |
FR2258001A1 (fr) * | 1974-01-14 | 1975-08-08 | Western Electric Co |
Non-Patent Citations (2)
Title |
---|
EXBK/73 * |
EXBK/75 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0017377A2 (fr) * | 1979-03-20 | 1980-10-15 | Fujitsu Limited | Procédé de fabrication de transistors bipolaires isolés |
EP0017377A3 (en) * | 1979-03-20 | 1982-08-25 | Fujitsu Limited | Method of producing insulated bipolar transistors and bipolar transistors insulated by that method |
Also Published As
Publication number | Publication date |
---|---|
IT1074663B (it) | 1985-04-20 |
FR2341206B1 (fr) | 1983-05-20 |
DE2605641A1 (de) | 1977-08-18 |
DE2605641B2 (de) | 1979-04-19 |
GB1530010A (en) | 1978-10-25 |
DE2605641C3 (de) | 1979-12-20 |
US4110779A (en) | 1978-08-29 |
JPS5299078A (en) | 1977-08-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |