FR2340621A1 - Transistor a effet de champ ayant une stabilite de seuil perfectionnee - Google Patents
Transistor a effet de champ ayant une stabilite de seuil perfectionneeInfo
- Publication number
- FR2340621A1 FR2340621A1 FR7623637A FR7623637A FR2340621A1 FR 2340621 A1 FR2340621 A1 FR 2340621A1 FR 7623637 A FR7623637 A FR 7623637A FR 7623637 A FR7623637 A FR 7623637A FR 2340621 A1 FR2340621 A1 FR 2340621A1
- Authority
- FR
- France
- Prior art keywords
- field
- effect transistor
- threshold stability
- advanced
- advanced threshold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/167—Two diffusions in one hole
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/615,251 US4028717A (en) | 1975-09-22 | 1975-09-22 | Field effect transistor having improved threshold stability |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2340621A1 true FR2340621A1 (fr) | 1977-09-02 |
FR2340621B1 FR2340621B1 (fr) | 1979-03-02 |
Family
ID=24464629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7623637A Granted FR2340621A1 (fr) | 1975-09-22 | 1976-07-27 | Transistor a effet de champ ayant une stabilite de seuil perfectionnee |
Country Status (10)
Country | Link |
---|---|
US (3) | US4028717A (fr) |
JP (1) | JPS5239381A (fr) |
CA (1) | CA1049154A (fr) |
CH (1) | CH600575A5 (fr) |
DE (1) | DE2636214C2 (fr) |
FR (1) | FR2340621A1 (fr) |
GB (1) | GB1497626A (fr) |
IT (1) | IT1074051B (fr) |
NL (1) | NL7609801A (fr) |
PT (1) | PT65536B (fr) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4028717A (en) * | 1975-09-22 | 1977-06-07 | Ibm Corporation | Field effect transistor having improved threshold stability |
JPS52124166U (fr) * | 1976-03-16 | 1977-09-21 | ||
JPS53128281A (en) * | 1977-04-15 | 1978-11-09 | Hitachi Ltd | Insulated gate field effect type semiconductor device for large power |
US4145233A (en) * | 1978-05-26 | 1979-03-20 | Ncr Corporation | Method for making narrow channel FET by masking and ion-implantation |
US4225875A (en) * | 1978-04-19 | 1980-09-30 | Rca Corporation | Short channel MOS devices and the method of manufacturing same |
US4263057A (en) * | 1978-04-19 | 1981-04-21 | Rca Corporation | Method of manufacturing short channel MOS devices |
DE2821975C2 (de) * | 1978-05-19 | 1983-01-27 | Siemens AG, 1000 Berlin und 8000 München | Metall-Halbleiter-Feldeffekttransistor (MESFET) und Verfahren zu dessen Herstellung |
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
US4218267A (en) * | 1979-04-23 | 1980-08-19 | Rockwell International Corporation | Microelectronic fabrication method minimizing threshold voltage variation |
US4257826A (en) * | 1979-10-11 | 1981-03-24 | Texas Instruments Incorporated | Photoresist masking in manufacture of semiconductor device |
US4369072A (en) * | 1981-01-22 | 1983-01-18 | International Business Machines Corp. | Method for forming IGFET devices having improved drain voltage characteristics |
JPS5833870A (ja) * | 1981-08-24 | 1983-02-28 | Hitachi Ltd | 半導体装置 |
JPS5950562A (ja) * | 1982-09-17 | 1984-03-23 | Toshiba Corp | 半導体装置 |
US4602965A (en) * | 1984-03-13 | 1986-07-29 | Communications Satellite Corporation | Method of making FETs in GaAs by dual species implantation of silicon and boron |
JPH0612822B2 (ja) * | 1984-07-27 | 1994-02-16 | 株式会社日立製作所 | 半導体装置 |
US4680603A (en) * | 1985-04-12 | 1987-07-14 | General Electric Company | Graded extended drain concept for reduced hot electron effect |
US4691433A (en) * | 1985-04-12 | 1987-09-08 | General Electric Company | Hybrid extended drain concept for reduced hot electron effect |
JPS63119574A (ja) * | 1986-11-07 | 1988-05-24 | Toshiba Corp | 半導体装置の製造方法 |
JPS63302535A (ja) * | 1987-06-03 | 1988-12-09 | Mitsubishi Electric Corp | ガリウム砒素集積回路 |
US5024960A (en) * | 1987-06-16 | 1991-06-18 | Texas Instruments Incorporated | Dual LDD submicron CMOS process for making low and high voltage transistors with common gate |
US5021851A (en) * | 1988-05-03 | 1991-06-04 | Texas Instruments Incorporated | NMOS source/drain doping with both P and As |
US5006477A (en) * | 1988-11-25 | 1991-04-09 | Hughes Aircraft Company | Method of making a latch up free, high voltage, CMOS bulk process for sub-half micron devices |
GB8907898D0 (en) * | 1989-04-07 | 1989-05-24 | Inmos Ltd | Semiconductor devices and fabrication thereof |
US5550069A (en) * | 1990-06-23 | 1996-08-27 | El Mos Electronik In Mos Technologie Gmbh | Method for producing a PMOS transistor |
DE4020076A1 (de) * | 1990-06-23 | 1992-01-09 | El Mos Elektronik In Mos Techn | Verfahren zur herstellung eines pmos-transistors sowie pmos-transistor |
US5397715A (en) * | 1993-10-21 | 1995-03-14 | Micrel, Incorporated | MOS transistor having increased gate-drain capacitance |
US5453392A (en) * | 1993-12-02 | 1995-09-26 | United Microelectronics Corporation | Process for forming flat-cell mask ROMS |
US5744372A (en) | 1995-04-12 | 1998-04-28 | National Semiconductor Corporation | Fabrication of complementary field-effect transistors each having multi-part channel |
FR2794898B1 (fr) | 1999-06-11 | 2001-09-14 | France Telecom | Dispositif semi-conducteur a tension de seuil compensee et procede de fabrication |
US7259072B2 (en) * | 2004-04-21 | 2007-08-21 | Chartered Semiconductor Manufacturing Ltd. | Shallow low energy ion implantation into pad oxide for improving threshold voltage stability |
US7419892B2 (en) * | 2005-12-13 | 2008-09-02 | Cree, Inc. | Semiconductor devices including implanted regions and protective layers and methods of forming the same |
US7807555B2 (en) * | 2007-07-31 | 2010-10-05 | Intersil Americas, Inc. | Method of forming the NDMOS device body with the reduced number of masks |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3408543A (en) * | 1964-06-01 | 1968-10-29 | Hitachi Ltd | Combination capacitor and fieldeffect transistor |
US3397326A (en) * | 1965-03-30 | 1968-08-13 | Westinghouse Electric Corp | Bipolar transistor with field effect biasing means |
US3340598A (en) * | 1965-04-19 | 1967-09-12 | Teledyne Inc | Method of making field effect transistor device |
US3434021A (en) * | 1967-01-13 | 1969-03-18 | Rca Corp | Insulated gate field effect transistor |
GB1280022A (en) * | 1968-08-30 | 1972-07-05 | Mullard Ltd | Improvements in and relating to semiconductor devices |
US3614555A (en) * | 1968-12-23 | 1971-10-19 | Bell Telephone Labor Inc | Monolithic integrated circuit structure |
JPS4936514B1 (fr) * | 1970-05-13 | 1974-10-01 | ||
US4005450A (en) * | 1970-05-13 | 1977-01-25 | Hitachi, Ltd. | Insulated gate field effect transistor having drain region containing low impurity concentration layer |
NL7017066A (fr) * | 1970-11-21 | 1972-05-24 | ||
US3974516A (en) * | 1970-11-21 | 1976-08-10 | U.S. Philips Corporation | Method of manufacturing a semiconductor device having at least one insulated gate field effect transistor, and semiconductor device manufactured by using the method |
US3879236A (en) * | 1971-03-26 | 1975-04-22 | Ibm | Method of making a semiconductor resistor |
US3793721A (en) * | 1971-08-02 | 1974-02-26 | Texas Instruments Inc | Integrated circuit and method of fabrication |
US3895390A (en) * | 1972-11-24 | 1975-07-15 | Signetics Corp | Metal oxide semiconductor structure and method using ion implantation |
JPS49105490A (fr) * | 1973-02-07 | 1974-10-05 | ||
JPS5636585B2 (fr) * | 1973-07-02 | 1981-08-25 | ||
US3986903A (en) * | 1974-03-13 | 1976-10-19 | Intel Corporation | Mosfet transistor and method of fabrication |
US3959025A (en) * | 1974-05-01 | 1976-05-25 | Rca Corporation | Method of making an insulated gate field effect transistor |
JPS6014512B2 (ja) * | 1975-03-04 | 1985-04-13 | 日本電信電話株式会社 | 絶縁ゲ−ト型電界効果トランジスタ |
US4028717A (en) * | 1975-09-22 | 1977-06-07 | Ibm Corporation | Field effect transistor having improved threshold stability |
-
1975
- 1975-09-22 US US05/615,251 patent/US4028717A/en not_active Expired - Lifetime
-
1976
- 1976-07-27 FR FR7623637A patent/FR2340621A1/fr active Granted
- 1976-08-06 CH CH1006676A patent/CH600575A5/xx not_active IP Right Cessation
- 1976-08-12 DE DE2636214A patent/DE2636214C2/de not_active Expired
- 1976-08-17 GB GB34146/76A patent/GB1497626A/en not_active Expired
- 1976-08-20 JP JP51098817A patent/JPS5239381A/ja active Granted
- 1976-08-31 PT PT65536A patent/PT65536B/pt unknown
- 1976-09-02 NL NL7609801A patent/NL7609801A/xx not_active Application Discontinuation
- 1976-09-03 IT IT26826/76A patent/IT1074051B/it active
- 1976-09-17 CA CA76261431A patent/CA1049154A/fr not_active Expired
-
1977
- 1977-05-17 US US05/797,895 patent/US4089712A/en not_active Expired - Lifetime
-
1978
- 1978-02-24 US US05/881,095 patent/US4154626A/en not_active Expired - Lifetime
Non-Patent Citations (2)
Title |
---|
IBM TECHNICAL DISCLOSURE BULLETIN, VOLUME 15, NO. 6, NOVEMBRE 1972, NEW YORK * |
P. KRICK ET P. PLESHKO: "INTEGRATABLE, SYMMETRICAL HIGH-VOLTAGE MOSFET STRUCTURE", PAGES 1884-1885) * |
Also Published As
Publication number | Publication date |
---|---|
US4028717A (en) | 1977-06-07 |
DE2636214C2 (de) | 1983-09-22 |
DE2636214A1 (de) | 1977-03-31 |
GB1497626A (en) | 1978-01-12 |
PT65536A (en) | 1976-09-01 |
JPS5626146B2 (fr) | 1981-06-17 |
CA1049154A (fr) | 1979-02-20 |
PT65536B (en) | 1978-02-22 |
IT1074051B (it) | 1985-04-17 |
US4154626A (en) | 1979-05-15 |
JPS5239381A (en) | 1977-03-26 |
CH600575A5 (fr) | 1978-06-15 |
NL7609801A (nl) | 1977-03-24 |
US4089712A (en) | 1978-05-16 |
FR2340621B1 (fr) | 1979-03-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |