FR2320774A1 - Procede et dispositif de depot de materiau dope - Google Patents
Procede et dispositif de depot de materiau dopeInfo
- Publication number
- FR2320774A1 FR2320774A1 FR7400838A FR7400838A FR2320774A1 FR 2320774 A1 FR2320774 A1 FR 2320774A1 FR 7400838 A FR7400838 A FR 7400838A FR 7400838 A FR7400838 A FR 7400838A FR 2320774 A1 FR2320774 A1 FR 2320774A1
- Authority
- FR
- France
- Prior art keywords
- deposit
- dope material
- dope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/917—Magnetic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/04—Dopants, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/057—Gas flow control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7400838A FR2320774A1 (fr) | 1974-01-10 | 1974-01-10 | Procede et dispositif de depot de materiau dope |
DE19752500197 DE2500197A1 (de) | 1974-01-10 | 1975-01-03 | Verfahren zur ablagerung dotierten materials, insbesondere zur herstellung von halbleiteranordnungen |
US05/538,717 US3979235A (en) | 1974-01-10 | 1975-01-06 | Depositing doped material on a substrate |
JP431675A JPS5419140B2 (fr) | 1974-01-10 | 1975-01-07 | |
GB616/75A GB1481477A (en) | 1974-01-10 | 1975-01-07 | Depositing doped material on a substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7400838A FR2320774A1 (fr) | 1974-01-10 | 1974-01-10 | Procede et dispositif de depot de materiau dope |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2320774A1 true FR2320774A1 (fr) | 1977-03-11 |
FR2320774B1 FR2320774B1 (fr) | 1978-03-24 |
Family
ID=9133333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7400838A Granted FR2320774A1 (fr) | 1974-01-10 | 1974-01-10 | Procede et dispositif de depot de materiau dope |
Country Status (5)
Country | Link |
---|---|
US (1) | US3979235A (fr) |
JP (1) | JPS5419140B2 (fr) |
DE (1) | DE2500197A1 (fr) |
FR (1) | FR2320774A1 (fr) |
GB (1) | GB1481477A (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5296865A (en) * | 1976-02-04 | 1977-08-15 | Nec Corp | Crystal grown unit for chemical compound semiconductor |
JPS5347765A (en) * | 1976-10-13 | 1978-04-28 | Matsushita Electric Ind Co Ltd | Semiconductor crystal growth method |
US4279670A (en) * | 1979-08-06 | 1981-07-21 | Raytheon Company | Semiconductor device manufacturing methods utilizing a predetermined flow of reactive substance over a dopant material |
JPS5864024A (ja) * | 1981-10-14 | 1983-04-16 | Nec Corp | 半導体気相成長方法 |
US4716130A (en) * | 1984-04-26 | 1987-12-29 | American Telephone And Telegraph Company, At&T Bell Laboratories | MOCVD of semi-insulating indium phosphide based compositions |
JP2587623B2 (ja) * | 1986-11-22 | 1997-03-05 | 新技術事業団 | 化合物半導体のエピタキシヤル結晶成長方法 |
US4782034A (en) * | 1987-06-04 | 1988-11-01 | American Telephone And Telegraph Company, At&T Bell Laboratories | Semi-insulating group III-V based compositions doped using bis arene titanium sources |
US4830982A (en) * | 1986-12-16 | 1989-05-16 | American Telephone And Telegraph Company | Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors |
US4774554A (en) * | 1986-12-16 | 1988-09-27 | American Telephone And Telegraph Company, At&T Bell Laboratories | Semiconductor devices employing Ti-doped Group III-V epitaxial layer |
GB2213837B (en) * | 1987-12-22 | 1992-03-11 | Philips Electronic Associated | Electronic device manufacture with deposition of material |
US5183779A (en) * | 1991-05-03 | 1993-02-02 | The United States Of America As Represented By The Secretary Of The Navy | Method for doping GaAs with high vapor pressure elements |
DE60041341D1 (de) | 1999-08-17 | 2009-02-26 | Tokyo Electron Ltd | Gepulstes plasmabehandlungsverfahren und vorrichtung |
JP5943345B2 (ja) * | 2012-07-27 | 2016-07-05 | 東京エレクトロン株式会社 | ZnO膜の製造装置及び製造方法 |
US20150355150A1 (en) * | 2013-01-24 | 2015-12-10 | Shimadzu Corporation | Sample heating device and elemental analyzer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2133498A1 (fr) * | 1971-04-15 | 1972-12-01 | Labo Electronique Physique |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3065062A (en) * | 1958-06-03 | 1962-11-20 | Wacker Chemie Gmbh | Process for purifying and recrystallizing metals, non-metals, their compounds or alloys |
US3492175A (en) * | 1965-12-17 | 1970-01-27 | Texas Instruments Inc | Method of doping semiconductor material |
US3421952A (en) * | 1966-02-02 | 1969-01-14 | Texas Instruments Inc | Method of making high resistivity group iii-v compounds and alloys doped with iron from an iron-arsenide source |
US3701682A (en) * | 1970-07-02 | 1972-10-31 | Texas Instruments Inc | Thin film deposition system |
US3764414A (en) * | 1972-05-01 | 1973-10-09 | Ibm | Open tube diffusion in iii-v compunds |
JPS5098794A (fr) * | 1973-12-27 | 1975-08-06 |
-
1974
- 1974-01-10 FR FR7400838A patent/FR2320774A1/fr active Granted
-
1975
- 1975-01-03 DE DE19752500197 patent/DE2500197A1/de active Pending
- 1975-01-06 US US05/538,717 patent/US3979235A/en not_active Expired - Lifetime
- 1975-01-07 JP JP431675A patent/JPS5419140B2/ja not_active Expired
- 1975-01-07 GB GB616/75A patent/GB1481477A/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2133498A1 (fr) * | 1971-04-15 | 1972-12-01 | Labo Electronique Physique |
Non-Patent Citations (2)
Title |
---|
ARTICLE DE R. KONTRIMAS ET AL: "CONTROLLED VAPOR GROWTH OF GALLIUM ARSENIDE ON GERANIUM") * |
REVUE US "ELECTROCHEMICAL TECHNOLOGY", JANVIER-FEVRIER 1968, PAGES 78-83 * |
Also Published As
Publication number | Publication date |
---|---|
FR2320774B1 (fr) | 1978-03-24 |
GB1481477A (en) | 1977-07-27 |
DE2500197A1 (de) | 1975-07-17 |
US3979235A (en) | 1976-09-07 |
JPS50108877A (fr) | 1975-08-27 |
JPS5419140B2 (fr) | 1979-07-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |