FR2311407A1 - Etage de commande mis integrable monolithiquement - Google Patents
Etage de commande mis integrable monolithiquementInfo
- Publication number
- FR2311407A1 FR2311407A1 FR7614636A FR7614636A FR2311407A1 FR 2311407 A1 FR2311407 A1 FR 2311407A1 FR 7614636 A FR7614636 A FR 7614636A FR 7614636 A FR7614636 A FR 7614636A FR 2311407 A1 FR2311407 A1 FR 2311407A1
- Authority
- FR
- France
- Prior art keywords
- integrated control
- control stage
- monolithically integrated
- monolithically
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
- H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/02—Shaping pulses by amplifying
- H03K5/023—Shaping pulses by amplifying using field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Computing Systems (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19752521949 DE2521949A1 (de) | 1975-05-16 | 1975-05-16 | Monolithisch integrierbare mis- treiberstufe |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2311407A1 true FR2311407A1 (fr) | 1976-12-10 |
Family
ID=5946771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7614636A Withdrawn FR2311407A1 (fr) | 1975-05-16 | 1976-05-14 | Etage de commande mis integrable monolithiquement |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS51140544A (de) |
DE (1) | DE2521949A1 (de) |
FR (1) | FR2311407A1 (de) |
GB (1) | GB1520078A (de) |
IT (1) | IT1060573B (de) |
NL (1) | NL7605092A (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2372548A1 (fr) * | 1976-11-29 | 1978-06-23 | Ibm | Dispositif de commande a transistors a effet de champ travaillant en mode d'enrichissement/appauvrissement |
FR2585903A1 (fr) * | 1985-08-02 | 1987-02-06 | Sgs Microelettronica Spa | Circuit de pilotage a bootstrap en technologie n-mos pour charges capacitives |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4093875A (en) * | 1977-01-31 | 1978-06-06 | International Business Machines Corporation | Field effect transistor (FET) circuit utilizing substrate potential for turning off depletion mode devices |
US4500799A (en) * | 1980-07-28 | 1985-02-19 | Inmos Corporation | Bootstrap driver circuits for an MOS memory |
USH97H (en) * | 1982-12-21 | 1986-08-05 | At&T Bell Laboratories | Row-address-decoder-driver circuit |
GB2133946B (en) * | 1983-01-14 | 1986-02-26 | Itt Ind Ltd | Memory output circuit |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1534428A (fr) * | 1966-12-14 | 1968-07-26 | North American Aviation Inc | Dispositif d'excitation semi-conducteur à oxyde métallique et à réaction capacitive |
US3508084A (en) * | 1967-10-06 | 1970-04-21 | Texas Instruments Inc | Enhancement-mode mos circuitry |
-
1975
- 1975-05-16 DE DE19752521949 patent/DE2521949A1/de active Pending
-
1976
- 1976-05-11 GB GB1932476A patent/GB1520078A/en not_active Expired
- 1976-05-13 NL NL7605092A patent/NL7605092A/xx not_active Application Discontinuation
- 1976-05-14 FR FR7614636A patent/FR2311407A1/fr not_active Withdrawn
- 1976-05-14 IT IT2325076A patent/IT1060573B/it active
- 1976-05-14 JP JP51054470A patent/JPS51140544A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1534428A (fr) * | 1966-12-14 | 1968-07-26 | North American Aviation Inc | Dispositif d'excitation semi-conducteur à oxyde métallique et à réaction capacitive |
US3508084A (en) * | 1967-10-06 | 1970-04-21 | Texas Instruments Inc | Enhancement-mode mos circuitry |
Non-Patent Citations (2)
Title |
---|
NV700/71 * |
NV700/76 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2372548A1 (fr) * | 1976-11-29 | 1978-06-23 | Ibm | Dispositif de commande a transistors a effet de champ travaillant en mode d'enrichissement/appauvrissement |
FR2585903A1 (fr) * | 1985-08-02 | 1987-02-06 | Sgs Microelettronica Spa | Circuit de pilotage a bootstrap en technologie n-mos pour charges capacitives |
Also Published As
Publication number | Publication date |
---|---|
JPS51140544A (en) | 1976-12-03 |
DE2521949A1 (de) | 1976-11-25 |
NL7605092A (nl) | 1976-11-18 |
GB1520078A (en) | 1978-08-02 |
IT1060573B (it) | 1982-08-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |