FR2308205A1 - Dispositif redresseur avec deux elements semiconducteurs, connexions d'entree et de sortie, et une troisieme connexion associee au conducteur de liaison des elements - Google Patents

Dispositif redresseur avec deux elements semiconducteurs, connexions d'entree et de sortie, et une troisieme connexion associee au conducteur de liaison des elements

Info

Publication number
FR2308205A1
FR2308205A1 FR7610951A FR7610951A FR2308205A1 FR 2308205 A1 FR2308205 A1 FR 2308205A1 FR 7610951 A FR7610951 A FR 7610951A FR 7610951 A FR7610951 A FR 7610951A FR 2308205 A1 FR2308205 A1 FR 2308205A1
Authority
FR
France
Prior art keywords
elements
input
output connections
rectifier device
connection associated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7610951A
Other languages
English (en)
Other versions
FR2308205B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of FR2308205A1 publication Critical patent/FR2308205A1/fr
Application granted granted Critical
Publication of FR2308205B1 publication Critical patent/FR2308205B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Rectifiers (AREA)
FR7610951A 1975-04-19 1976-04-14 Dispositif redresseur avec deux elements semiconducteurs, connexions d'entree et de sortie, et une troisieme connexion associee au conducteur de liaison des elements Granted FR2308205A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19757512573U DE7512573U (de) 1975-04-19 1975-04-19 Halbleitergleichrichteranordnung

Publications (2)

Publication Number Publication Date
FR2308205A1 true FR2308205A1 (fr) 1976-11-12
FR2308205B1 FR2308205B1 (fr) 1981-09-25

Family

ID=6651690

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7610951A Granted FR2308205A1 (fr) 1975-04-19 1976-04-14 Dispositif redresseur avec deux elements semiconducteurs, connexions d'entree et de sortie, et une troisieme connexion associee au conducteur de liaison des elements

Country Status (5)

Country Link
US (1) US4047197A (fr)
BR (1) BR7602377A (fr)
DE (1) DE7512573U (fr)
FR (1) FR2308205A1 (fr)
GB (1) GB1552133A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2395603A1 (fr) * 1977-06-23 1979-01-19 Siemens Ag Composant a semi-conducteurs
FR2470445A1 (fr) * 1979-11-21 1981-05-29 Thomson Csf Dispositif de mise en parallele de transistors bipolaires de puissance en tres haute frequence et amplificateur utilisant ce dispositif
FR2489593A1 (fr) * 1980-09-04 1982-03-05 Tokyo Shibaura Electric Co Dispositif redresseur a semi-conducteurs
US4599636A (en) * 1984-03-08 1986-07-08 General Semiconductor Industries, Inc. Two terminal axial lead suppressor and diode bridge device
EP0368133A2 (fr) * 1988-11-05 1990-05-16 Semikron Elektronik Gmbh Corps de support pour la disposition électriquement isolée de composants

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4106052A (en) * 1975-04-19 1978-08-08 Semikron Gesellschaft Fur Gleichrichterbau Und Elektronik M.B.H. Semiconductor rectifier unit having a base plate with means for maintaining insulating wafers in a desired position
DE2611260C3 (de) * 1976-03-17 1986-07-10 Siemens AG, 1000 Berlin und 8000 München Stromrichterbaueinheit
FR2351503A1 (fr) * 1976-05-11 1977-12-09 Thomson Csf Procede de realisation d'un circuit pour ondes millimetriques comportant une diode semi-conductrice et un autre composant semi-conducteur, et dispositifs realises par ledit procede
DE2638909A1 (de) * 1976-08-28 1978-03-02 Semikron Gleichrichterbau Halbleiteranordnung
DE2805019C2 (de) * 1978-02-06 1982-04-15 Siemens AG, 1000 Berlin und 8000 München Spannungsversorgungsgerät für Werkzeugmaschinenantriebe
DE2819327C2 (de) * 1978-05-03 1984-10-31 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbaueinheit
DE2829300C2 (de) * 1978-07-04 1988-07-28 Brown, Boveri & Cie Ag, 6800 Mannheim Umkehrstromrichter-Anordnung
US4215235A (en) * 1978-11-21 1980-07-29 Kaufman Lance R Lead frame terminal
US4249034A (en) * 1978-11-27 1981-02-03 General Electric Company Semiconductor package having strengthening and sealing upper chamber
US4278990A (en) * 1979-03-19 1981-07-14 General Electric Company Low thermal resistance, low stress semiconductor package
DE3005313C2 (de) * 1980-02-13 1986-05-28 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiteranordnung
US4518982A (en) * 1981-02-27 1985-05-21 Motorola, Inc. High current package with multi-level leads
US4574299A (en) * 1981-03-02 1986-03-04 General Electric Company Thyristor packaging system
US4538168A (en) * 1981-09-30 1985-08-27 Unitrode Corporation High power semiconductor package
US4514587A (en) * 1981-12-23 1985-04-30 Unitrode Corporation High power semiconductor package
DE3232157A1 (de) * 1982-08-30 1984-03-01 Siemens AG, 1000 Berlin und 8000 München Halbleiter-modul
US4538169A (en) * 1982-11-04 1985-08-27 Motorola, Inc. Integrated alternator bridge heat sink
US4568962A (en) * 1982-11-08 1986-02-04 Motorola, Inc. Plastic encapsulated semiconductor power device means and method
DE3241509A1 (de) * 1982-11-10 1984-05-10 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungstransistor-modul
EP0138048B1 (fr) * 1983-09-29 1993-12-15 Kabushiki Kaisha Toshiba Dispositif semi-conducteur dans un empaquetage à pression
JPS60239051A (ja) * 1984-05-11 1985-11-27 Mitsubishi Electric Corp 半導体装置
JPH0734457B2 (ja) * 1988-04-05 1995-04-12 株式会社東芝 半導体装置
US4994890A (en) * 1989-11-27 1991-02-19 Snap-On Tools Corporation Rectifier structure with individual links
EP0665591A1 (fr) * 1992-11-06 1995-08-02 Motorola, Inc. Procédé de fabrication d'un empaquetage de circuits de puissance
DE19531496C1 (de) * 1995-08-26 1996-11-14 Semikron Elektronik Gmbh Leistungshalbleitermodul, insb. Stromumrichter mit Folienverbund als isolierendes Substrat
FR2790905A1 (fr) * 1999-03-09 2000-09-15 Sagem Composant electrique de puissance a montage par brasage sur un support et procede de montage correspondant
DE10156626A1 (de) * 2001-11-17 2003-06-05 Bosch Gmbh Robert Elektronische Anordnung
US7138708B2 (en) * 1999-09-24 2006-11-21 Robert Bosch Gmbh Electronic system for fixing power and signal semiconductor chips
US6302709B1 (en) * 2000-06-05 2001-10-16 Power-One, Inc. Multiple function high current interconnect with integrated bus bar
EP1318547B1 (fr) * 2001-12-06 2013-04-17 ABB Research Ltd. Module semi-conducteur à haut prestation
EP1318545A1 (fr) * 2001-12-06 2003-06-11 Abb Research Ltd. Sous-module semi-conducteur à haut prestation et module semi-conducteur à haut prestation
DE102009050178B3 (de) * 2009-10-21 2011-05-26 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einem eine dreidimensionale Oberflächenkontur aufweisenden Substrat sowie Herstellungsverfahren hierzu
US11183440B2 (en) 2018-12-10 2021-11-23 Gan Systems Inc. Power modules for ultra-fast wide-bandgap power switching devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1049981A (en) * 1965-01-11 1966-11-30 Lucas Industries Ltd Full wave rectifiers
US3648121A (en) * 1967-09-06 1972-03-07 Tokyo Shibaura Electric Co A laminated semiconductor structure
US3483444A (en) * 1967-12-06 1969-12-09 Int Rectifier Corp Common housing for independent semiconductor devices
US3519888A (en) * 1968-08-12 1970-07-07 Int Rectifier Corp High voltage stack having metallic enclosure
GB1255749A (en) * 1969-04-30 1971-12-01 Westinghouse Brake & Signal Semiconductor devices
US3784725A (en) * 1972-07-24 1974-01-08 Solitron Devices Electronic hybrid package

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2395603A1 (fr) * 1977-06-23 1979-01-19 Siemens Ag Composant a semi-conducteurs
FR2470445A1 (fr) * 1979-11-21 1981-05-29 Thomson Csf Dispositif de mise en parallele de transistors bipolaires de puissance en tres haute frequence et amplificateur utilisant ce dispositif
EP0030168A1 (fr) * 1979-11-21 1981-06-10 Thomson-Csf Dispositif de mise en parallèle de transistors de puissance en très haute fréquence
FR2489593A1 (fr) * 1980-09-04 1982-03-05 Tokyo Shibaura Electric Co Dispositif redresseur a semi-conducteurs
US4599636A (en) * 1984-03-08 1986-07-08 General Semiconductor Industries, Inc. Two terminal axial lead suppressor and diode bridge device
EP0368133A2 (fr) * 1988-11-05 1990-05-16 Semikron Elektronik Gmbh Corps de support pour la disposition électriquement isolée de composants
EP0368133A3 (fr) * 1988-11-05 1990-11-22 Semikron Elektronik Gmbh Corps de support pour la disposition électriquement isolée de composants

Also Published As

Publication number Publication date
FR2308205B1 (fr) 1981-09-25
US4047197B1 (fr) 1985-03-26
GB1552133A (en) 1979-09-12
DE7512573U (de) 1975-09-04
US4047197A (en) 1977-09-06
BR7602377A (pt) 1976-10-12

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