FR2300417B1 - - Google Patents
Info
- Publication number
- FR2300417B1 FR2300417B1 FR7603362A FR7603362A FR2300417B1 FR 2300417 B1 FR2300417 B1 FR 2300417B1 FR 7603362 A FR7603362 A FR 7603362A FR 7603362 A FR7603362 A FR 7603362A FR 2300417 B1 FR2300417 B1 FR 2300417B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50016561A JPS5914897B2 (ja) | 1975-02-08 | 1975-02-08 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2300417A1 FR2300417A1 (fr) | 1976-09-03 |
FR2300417B1 true FR2300417B1 (fr) | 1980-03-21 |
Family
ID=11919681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7603362A Granted FR2300417A1 (fr) | 1975-02-08 | 1976-02-06 | Circuit semi-conducteur integre a transistors complementaires pnp-npn |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5914897B2 (fr) |
CA (1) | CA1048655A (fr) |
CH (1) | CH607332A5 (fr) |
DE (1) | DE2604735A1 (fr) |
FR (1) | FR2300417A1 (fr) |
GB (1) | GB1533156A (fr) |
IT (1) | IT1055132B (fr) |
NL (1) | NL7601307A (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56126960A (en) * | 1980-03-11 | 1981-10-05 | Nec Corp | Manufacture of semiconductor device |
EP0093304B1 (fr) * | 1982-04-19 | 1986-01-15 | Matsushita Electric Industrial Co., Ltd. | Circuit intégré semi-conducteur et son procédé de fabrication |
JPS6062595U (ja) * | 1983-10-04 | 1985-05-01 | 井上 八郎 | 地盤堀削用ビツトの切削用刃先 |
JPS61164399U (fr) * | 1985-03-30 | 1986-10-11 | ||
IT1218471B (it) * | 1985-05-09 | 1990-04-19 | Ates Componenti Elettron | Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato |
JPH053587Y2 (fr) * | 1986-11-19 | 1993-01-28 | ||
JPS6386192U (fr) * | 1986-11-19 | 1988-06-06 | ||
DE3883459T2 (de) * | 1987-07-29 | 1994-03-17 | Fairchild Semiconductor | Verfahren zum Herstellen komplementärer kontaktloser vertikaler Bipolartransistoren. |
JPH02296994A (ja) * | 1989-05-09 | 1990-12-07 | Fujita Corp | 泥漿シールド機のカツターヘツド |
JPH03128793U (fr) * | 1990-04-10 | 1991-12-25 | ||
JPH0450493U (fr) * | 1990-08-31 | 1992-04-28 | ||
FR3106931B1 (fr) * | 2020-01-30 | 2022-02-18 | St Microelectronics Crolles 2 Sas | Procédé de fabrication d’un dispositif comprenant un transistor bipolaire PNP et un transistor bipolaire NPN pour applications radiofréquences |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5147583B2 (fr) * | 1972-12-29 | 1976-12-15 |
-
1975
- 1975-02-08 JP JP50016561A patent/JPS5914897B2/ja not_active Expired
-
1976
- 1976-02-04 GB GB440076A patent/GB1533156A/en not_active Expired
- 1976-02-05 IT IT1995076A patent/IT1055132B/it active
- 1976-02-05 CA CA76245057A patent/CA1048655A/fr not_active Expired
- 1976-02-06 CH CH146276A patent/CH607332A5/xx not_active IP Right Cessation
- 1976-02-06 DE DE19762604735 patent/DE2604735A1/de not_active Withdrawn
- 1976-02-06 FR FR7603362A patent/FR2300417A1/fr active Granted
- 1976-02-09 NL NL7601307A patent/NL7601307A/xx not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
FR2300417A1 (fr) | 1976-09-03 |
DE2604735A1 (de) | 1976-08-19 |
IT1055132B (it) | 1981-12-21 |
NL7601307A (nl) | 1976-08-10 |
GB1533156A (en) | 1978-11-22 |
JPS5914897B2 (ja) | 1984-04-06 |
CA1048655A (fr) | 1979-02-13 |
CH607332A5 (fr) | 1978-12-15 |
JPS5191680A (fr) | 1976-08-11 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |