FR2285341A1 - Procede de synthese de phosphure de gallium - Google Patents

Procede de synthese de phosphure de gallium

Info

Publication number
FR2285341A1
FR2285341A1 FR7431524A FR7431524A FR2285341A1 FR 2285341 A1 FR2285341 A1 FR 2285341A1 FR 7431524 A FR7431524 A FR 7431524A FR 7431524 A FR7431524 A FR 7431524A FR 2285341 A1 FR2285341 A1 FR 2285341A1
Authority
FR
France
Prior art keywords
synthesis process
gallium phosphide
phosphide synthesis
gallium
synthesis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7431524A
Other languages
English (en)
Other versions
FR2285341B1 (fr
Inventor
Gerard Poiblaud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7431524A priority Critical patent/FR2285341A1/fr
Priority to DE2540175A priority patent/DE2540175C3/de
Priority to CA235,390A priority patent/CA1058827A/fr
Priority to GB37863/75A priority patent/GB1512105A/en
Priority to US05/613,246 priority patent/US4036932A/en
Priority to JP11247275A priority patent/JPS5527001B2/ja
Publication of FR2285341A1 publication Critical patent/FR2285341A1/fr
Application granted granted Critical
Publication of FR2285341B1 publication Critical patent/FR2285341B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/44—Gallium phosphide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7431524A 1974-09-18 1974-09-18 Procede de synthese de phosphure de gallium Granted FR2285341A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7431524A FR2285341A1 (fr) 1974-09-18 1974-09-18 Procede de synthese de phosphure de gallium
DE2540175A DE2540175C3 (de) 1974-09-18 1975-09-10 Verfahren zur Herstellung von Galliumphosphid
CA235,390A CA1058827A (fr) 1974-09-18 1975-09-11 Methode pour la preparation du phosphure de gallium
GB37863/75A GB1512105A (en) 1974-09-18 1975-09-15 Method of preparing gallium phosphide
US05/613,246 US4036932A (en) 1974-09-18 1975-09-15 Method of preparing galliumphosphide
JP11247275A JPS5527001B2 (fr) 1974-09-18 1975-09-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7431524A FR2285341A1 (fr) 1974-09-18 1974-09-18 Procede de synthese de phosphure de gallium

Publications (2)

Publication Number Publication Date
FR2285341A1 true FR2285341A1 (fr) 1976-04-16
FR2285341B1 FR2285341B1 (fr) 1976-12-31

Family

ID=9143199

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7431524A Granted FR2285341A1 (fr) 1974-09-18 1974-09-18 Procede de synthese de phosphure de gallium

Country Status (6)

Country Link
US (1) US4036932A (fr)
JP (1) JPS5527001B2 (fr)
CA (1) CA1058827A (fr)
DE (1) DE2540175C3 (fr)
FR (1) FR2285341A1 (fr)
GB (1) GB1512105A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57118713A (en) * 1981-01-19 1982-07-23 Kubota Ltd Attaching structure of planting device of rice transplanter
KR102406584B1 (ko) 2016-07-05 2022-06-08 이네오스 아메리카스 엘엘씨 산성 가스 처리에서 흡수제를 회수하기 위한 방법 및 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1029803B (de) * 1954-09-18 1958-05-14 Siemens Ag Verfahren zur Herstellung einer Verbindung oder einer Legierung in kristalliner Form durch Zusammen-schmelzen der Komponenten in einem abgeschlossenen System
US3617371A (en) * 1968-11-13 1971-11-02 Hewlett Packard Co Method and means for producing semiconductor material
JPS4915901B1 (fr) * 1969-09-10 1974-04-18

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
JPS5155798A (fr) 1976-05-17
CA1058827A (fr) 1979-07-24
DE2540175B2 (de) 1980-06-12
US4036932A (en) 1977-07-19
DE2540175A1 (de) 1976-04-01
DE2540175C3 (de) 1981-02-19
JPS5527001B2 (fr) 1980-07-17
FR2285341B1 (fr) 1976-12-31
GB1512105A (en) 1978-05-24

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Legal Events

Date Code Title Description
ST Notification of lapse