FR2282721A1 - Dispositif semi-conducteur - Google Patents
Dispositif semi-conducteurInfo
- Publication number
- FR2282721A1 FR2282721A1 FR7525542A FR7525542A FR2282721A1 FR 2282721 A1 FR2282721 A1 FR 2282721A1 FR 7525542 A FR7525542 A FR 7525542A FR 7525542 A FR7525542 A FR 7525542A FR 2282721 A1 FR2282721 A1 FR 2282721A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0664—Vertical bipolar transistor in combination with diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US49877474A | 1974-08-19 | 1974-08-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2282721A1 true FR2282721A1 (fr) | 1976-03-19 |
Family
ID=23982440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7525542A Withdrawn FR2282721A1 (fr) | 1974-08-19 | 1975-08-18 | Dispositif semi-conducteur |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS5145984A (de) |
AU (1) | AU8392475A (de) |
BE (1) | BE832491A (de) |
DE (1) | DE2535864A1 (de) |
FR (1) | FR2282721A1 (de) |
GB (1) | GB1502122A (de) |
IN (1) | IN141922B (de) |
NL (1) | NL7509804A (de) |
SE (1) | SE7509023L (de) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2427687A1 (fr) * | 1978-06-01 | 1979-12-28 | Mitsubishi Electric Corp | Dispositifs a semi-conducteurs comportant au moins un transistor de puissance et une serie de transistors pour signaux faibles |
EP0020233A1 (de) * | 1979-05-29 | 1980-12-10 | Thomson-Csf | Integrierte Struktur mit einem Transistor und drei Anti-Sättigungsdioden |
EP0022687A1 (de) * | 1979-06-12 | 1981-01-21 | Thomson-Csf | An einen Transistor mit drei Anti-Sättigungsdioden äquivalente integrierte monolithische Schaltung und Verfahren zu deren Herstellung |
EP0237933A2 (de) * | 1986-03-17 | 1987-09-23 | Kabushiki Kaisha Toshiba | Halbleitervorrichtung mit einer Darlington-Transistorschaltung |
EP0517623A2 (de) * | 1991-05-31 | 1992-12-09 | STMicroelectronics S.A. | Transistor mit einer vorbestimmten Stromverstärkung in einer integrierten Bipolarschaltung |
EP0632502A1 (de) * | 1993-06-28 | 1995-01-04 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe | Bipolar-Leistungstransistor mit hoher Kollektor-Durchbrucksspannung und Verfahren zu seiner Herstellung |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0531725Y2 (de) * | 1987-10-28 | 1993-08-16 | ||
US6566217B1 (en) | 1996-01-16 | 2003-05-20 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing process for semiconductor device |
KR100256169B1 (ko) * | 1996-01-16 | 2000-05-15 | 다니구찌 이찌로오, 기타오카 다카시 | 반도체 장치 및 그 제조방법 |
-
1975
- 1975-07-11 IN IN1354/CAL/75A patent/IN141922B/en unknown
- 1975-08-12 JP JP50098444A patent/JPS5145984A/ja active Pending
- 1975-08-12 GB GB33548/75A patent/GB1502122A/en not_active Expired
- 1975-08-12 SE SE7509023A patent/SE7509023L/xx unknown
- 1975-08-12 DE DE19752535864 patent/DE2535864A1/de active Pending
- 1975-08-13 AU AU83924/75A patent/AU8392475A/en not_active Expired
- 1975-08-14 BE BE7000690A patent/BE832491A/xx unknown
- 1975-08-18 FR FR7525542A patent/FR2282721A1/fr not_active Withdrawn
- 1975-08-18 NL NL7509804A patent/NL7509804A/xx not_active Application Discontinuation
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2427687A1 (fr) * | 1978-06-01 | 1979-12-28 | Mitsubishi Electric Corp | Dispositifs a semi-conducteurs comportant au moins un transistor de puissance et une serie de transistors pour signaux faibles |
EP0020233A1 (de) * | 1979-05-29 | 1980-12-10 | Thomson-Csf | Integrierte Struktur mit einem Transistor und drei Anti-Sättigungsdioden |
FR2458146A1 (fr) * | 1979-05-29 | 1980-12-26 | Thomson Csf | Structure integree comportant un transistor et trois diodes antisaturation |
EP0022687A1 (de) * | 1979-06-12 | 1981-01-21 | Thomson-Csf | An einen Transistor mit drei Anti-Sättigungsdioden äquivalente integrierte monolithische Schaltung und Verfahren zu deren Herstellung |
EP0237933A2 (de) * | 1986-03-17 | 1987-09-23 | Kabushiki Kaisha Toshiba | Halbleitervorrichtung mit einer Darlington-Transistorschaltung |
EP0237933A3 (en) * | 1986-03-17 | 1989-02-08 | Kabushiki Kaisha Toshiba | Semiconductor device having darlington-connected transistor circuit |
EP0517623A2 (de) * | 1991-05-31 | 1992-12-09 | STMicroelectronics S.A. | Transistor mit einer vorbestimmten Stromverstärkung in einer integrierten Bipolarschaltung |
EP0517623A3 (en) * | 1991-05-31 | 1994-08-10 | Sgs Thomson Microelectronics | Transistor with a predetermined current gain in a bipolar integrated circuit |
EP0632502A1 (de) * | 1993-06-28 | 1995-01-04 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe | Bipolar-Leistungstransistor mit hoher Kollektor-Durchbrucksspannung und Verfahren zu seiner Herstellung |
US5569612A (en) * | 1993-06-28 | 1996-10-29 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Process for manufacturing a bipolar power transistor having a high breakdown voltage |
US5939769A (en) * | 1993-06-28 | 1999-08-17 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Bipolar power transistor with high collector breakdown voltage and related manufacturing process |
Also Published As
Publication number | Publication date |
---|---|
JPS5145984A (de) | 1976-04-19 |
DE2535864A1 (de) | 1976-03-04 |
IN141922B (de) | 1977-05-07 |
BE832491A (nl) | 1975-12-01 |
SE7509023L (sv) | 1976-02-20 |
GB1502122A (en) | 1978-02-22 |
NL7509804A (nl) | 1976-02-23 |
AU8392475A (en) | 1977-02-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |