FR2282721A1 - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur

Info

Publication number
FR2282721A1
FR2282721A1 FR7525542A FR7525542A FR2282721A1 FR 2282721 A1 FR2282721 A1 FR 2282721A1 FR 7525542 A FR7525542 A FR 7525542A FR 7525542 A FR7525542 A FR 7525542A FR 2282721 A1 FR2282721 A1 FR 2282721A1
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7525542A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2282721A1 publication Critical patent/FR2282721A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004Base region of bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0664Vertical bipolar transistor in combination with diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7525542A 1974-08-19 1975-08-18 Dispositif semi-conducteur Withdrawn FR2282721A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49877474A 1974-08-19 1974-08-19

Publications (1)

Publication Number Publication Date
FR2282721A1 true FR2282721A1 (fr) 1976-03-19

Family

ID=23982440

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7525542A Withdrawn FR2282721A1 (fr) 1974-08-19 1975-08-18 Dispositif semi-conducteur

Country Status (9)

Country Link
JP (1) JPS5145984A (de)
AU (1) AU8392475A (de)
BE (1) BE832491A (de)
DE (1) DE2535864A1 (de)
FR (1) FR2282721A1 (de)
GB (1) GB1502122A (de)
IN (1) IN141922B (de)
NL (1) NL7509804A (de)
SE (1) SE7509023L (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2427687A1 (fr) * 1978-06-01 1979-12-28 Mitsubishi Electric Corp Dispositifs a semi-conducteurs comportant au moins un transistor de puissance et une serie de transistors pour signaux faibles
EP0020233A1 (de) * 1979-05-29 1980-12-10 Thomson-Csf Integrierte Struktur mit einem Transistor und drei Anti-Sättigungsdioden
EP0022687A1 (de) * 1979-06-12 1981-01-21 Thomson-Csf An einen Transistor mit drei Anti-Sättigungsdioden äquivalente integrierte monolithische Schaltung und Verfahren zu deren Herstellung
EP0237933A2 (de) * 1986-03-17 1987-09-23 Kabushiki Kaisha Toshiba Halbleitervorrichtung mit einer Darlington-Transistorschaltung
EP0517623A2 (de) * 1991-05-31 1992-12-09 STMicroelectronics S.A. Transistor mit einer vorbestimmten Stromverstärkung in einer integrierten Bipolarschaltung
EP0632502A1 (de) * 1993-06-28 1995-01-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Bipolar-Leistungstransistor mit hoher Kollektor-Durchbrucksspannung und Verfahren zu seiner Herstellung

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0531725Y2 (de) * 1987-10-28 1993-08-16
US6566217B1 (en) 1996-01-16 2003-05-20 Mitsubishi Denki Kabushiki Kaisha Manufacturing process for semiconductor device
KR100256169B1 (ko) * 1996-01-16 2000-05-15 다니구찌 이찌로오, 기타오카 다카시 반도체 장치 및 그 제조방법

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2427687A1 (fr) * 1978-06-01 1979-12-28 Mitsubishi Electric Corp Dispositifs a semi-conducteurs comportant au moins un transistor de puissance et une serie de transistors pour signaux faibles
EP0020233A1 (de) * 1979-05-29 1980-12-10 Thomson-Csf Integrierte Struktur mit einem Transistor und drei Anti-Sättigungsdioden
FR2458146A1 (fr) * 1979-05-29 1980-12-26 Thomson Csf Structure integree comportant un transistor et trois diodes antisaturation
EP0022687A1 (de) * 1979-06-12 1981-01-21 Thomson-Csf An einen Transistor mit drei Anti-Sättigungsdioden äquivalente integrierte monolithische Schaltung und Verfahren zu deren Herstellung
EP0237933A2 (de) * 1986-03-17 1987-09-23 Kabushiki Kaisha Toshiba Halbleitervorrichtung mit einer Darlington-Transistorschaltung
EP0237933A3 (en) * 1986-03-17 1989-02-08 Kabushiki Kaisha Toshiba Semiconductor device having darlington-connected transistor circuit
EP0517623A2 (de) * 1991-05-31 1992-12-09 STMicroelectronics S.A. Transistor mit einer vorbestimmten Stromverstärkung in einer integrierten Bipolarschaltung
EP0517623A3 (en) * 1991-05-31 1994-08-10 Sgs Thomson Microelectronics Transistor with a predetermined current gain in a bipolar integrated circuit
EP0632502A1 (de) * 1993-06-28 1995-01-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Bipolar-Leistungstransistor mit hoher Kollektor-Durchbrucksspannung und Verfahren zu seiner Herstellung
US5569612A (en) * 1993-06-28 1996-10-29 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Process for manufacturing a bipolar power transistor having a high breakdown voltage
US5939769A (en) * 1993-06-28 1999-08-17 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Bipolar power transistor with high collector breakdown voltage and related manufacturing process

Also Published As

Publication number Publication date
JPS5145984A (de) 1976-04-19
DE2535864A1 (de) 1976-03-04
IN141922B (de) 1977-05-07
BE832491A (nl) 1975-12-01
SE7509023L (sv) 1976-02-20
GB1502122A (en) 1978-02-22
NL7509804A (nl) 1976-02-23
AU8392475A (en) 1977-02-17

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Legal Events

Date Code Title Description
ST Notification of lapse