FR2276659A1 - Memoire dynamique a semi-conducteurs comportant des elements d'emmagasinage a deux dispositifs - Google Patents

Memoire dynamique a semi-conducteurs comportant des elements d'emmagasinage a deux dispositifs

Info

Publication number
FR2276659A1
FR2276659A1 FR7516563A FR7516563A FR2276659A1 FR 2276659 A1 FR2276659 A1 FR 2276659A1 FR 7516563 A FR7516563 A FR 7516563A FR 7516563 A FR7516563 A FR 7516563A FR 2276659 A1 FR2276659 A1 FR 2276659A1
Authority
FR
France
Prior art keywords
semiconductor memory
storage elements
device storage
dynamic semiconductor
dynamic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7516563A
Other languages
English (en)
Other versions
FR2276659B1 (fr
Inventor
Horst Barsuhn
Jorg Gschwendtner
Werner O Haug
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2276659A1 publication Critical patent/FR2276659A1/fr
Application granted granted Critical
Publication of FR2276659B1 publication Critical patent/FR2276659B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
FR7516563A 1974-06-28 1975-05-23 Memoire dynamique a semi-conducteurs comportant des elements d'emmagasinage a deux dispositifs Granted FR2276659A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2431079A DE2431079C3 (de) 1974-06-28 1974-06-28 Dynamischer Halbleiterspeicher mit Zwei-Transistor-Speicherelementen

Publications (2)

Publication Number Publication Date
FR2276659A1 true FR2276659A1 (fr) 1976-01-23
FR2276659B1 FR2276659B1 (fr) 1980-01-04

Family

ID=5919184

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7516563A Granted FR2276659A1 (fr) 1974-06-28 1975-05-23 Memoire dynamique a semi-conducteurs comportant des elements d'emmagasinage a deux dispositifs

Country Status (6)

Country Link
JP (1) JPS5428252B2 (fr)
CH (1) CH581885A5 (fr)
DE (1) DE2431079C3 (fr)
FR (1) FR2276659A1 (fr)
GB (1) GB1502334A (fr)
IT (1) IT1038100B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0012802A1 (fr) * 1978-12-20 1980-07-09 International Business Machines Corporation Mémoire dynamique à semiconductor

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853512B2 (ja) * 1976-02-13 1983-11-29 株式会社東芝 半導体記憶装置の製造方法
JPS5922316B2 (ja) * 1976-02-24 1984-05-25 株式会社東芝 ダイナミツクメモリ装置
US4040016A (en) * 1976-03-31 1977-08-02 International Business Machines Corporation Twin nodes capacitance memory
US4103342A (en) * 1976-06-17 1978-07-25 International Business Machines Corporation Two-device memory cell with single floating capacitor
CA1164710A (fr) * 1978-05-09 1984-04-03 Edward J. Reardon, Jr. Compositions photosensibles phototropes contenant un agent colorant a base de fluoranne
DE2837877A1 (de) * 1978-08-30 1980-03-06 Siemens Ag Mos-integrierter halbleiterspeicher sowie verfahren zu seiner herstellung
EP0078338B1 (fr) * 1981-10-30 1986-02-05 Ibm Deutschland Gmbh Mémoire TEC
JP5034133B2 (ja) * 2000-02-29 2012-09-26 富士通セミコンダクター株式会社 半導体記憶装置
JP4707244B2 (ja) 2000-03-30 2011-06-22 ルネサスエレクトロニクス株式会社 半導体記憶装置および半導体装置
TWI359422B (en) 2008-04-15 2012-03-01 Faraday Tech Corp 2t sram and associated cell structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0012802A1 (fr) * 1978-12-20 1980-07-09 International Business Machines Corporation Mémoire dynamique à semiconductor

Also Published As

Publication number Publication date
FR2276659B1 (fr) 1980-01-04
DE2431079B2 (de) 1979-04-26
JPS5428252B2 (fr) 1979-09-14
DE2431079A1 (de) 1976-02-12
GB1502334A (en) 1978-03-01
CH581885A5 (fr) 1976-11-15
JPS513824A (fr) 1976-01-13
DE2431079C3 (de) 1979-12-13
IT1038100B (it) 1979-11-20

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Legal Events

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