FR2246021A1 - Storage cell for field or dynamic storage cells - has memory nodule and read-write line - Google Patents

Storage cell for field or dynamic storage cells - has memory nodule and read-write line

Info

Publication number
FR2246021A1
FR2246021A1 FR7426483A FR7426483A FR2246021A1 FR 2246021 A1 FR2246021 A1 FR 2246021A1 FR 7426483 A FR7426483 A FR 7426483A FR 7426483 A FR7426483 A FR 7426483A FR 2246021 A1 FR2246021 A1 FR 2246021A1
Authority
FR
France
Prior art keywords
read
field
write line
nodule
storage cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7426483A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of FR2246021A1 publication Critical patent/FR2246021A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)

Abstract

The first main electrode of the transistor is connected to a memory nodule, its second main electrode is connected to a read-write line and its gate electrode is connected to a first selector line. A tank capacitor has its first side linked to the memory nodule and its second side linked to a second selector line. The transistor can be a field-effect transistor of the enrichment type, whose control electrode is the gate electrode. The second selector line can be connected to the control electrode of a second storage cell.
FR7426483A 1973-07-30 1974-07-30 Storage cell for field or dynamic storage cells - has memory nodule and read-write line Withdrawn FR2246021A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US38387373A 1973-07-30 1973-07-30

Publications (1)

Publication Number Publication Date
FR2246021A1 true FR2246021A1 (en) 1975-04-25

Family

ID=23515092

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7426483A Withdrawn FR2246021A1 (en) 1973-07-30 1974-07-30 Storage cell for field or dynamic storage cells - has memory nodule and read-write line

Country Status (3)

Country Link
JP (1) JPS5045527A (en)
DE (1) DE2436648A1 (en)
FR (1) FR2246021A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5121450A (en) * 1974-08-15 1976-02-20 Nippon Electric Co
WO2011096264A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
KR101932909B1 (en) * 2010-03-04 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device and semiconductor device
WO2011125432A1 (en) * 2010-04-07 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
TWI541981B (en) * 2010-11-12 2016-07-11 半導體能源研究所股份有限公司 Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3533089A (en) * 1969-05-16 1970-10-06 Shell Oil Co Single-rail mosfet memory with capacitive storage

Also Published As

Publication number Publication date
DE2436648A1 (en) 1975-03-06
JPS5045527A (en) 1975-04-23

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Legal Events

Date Code Title Description
ST Notification of lapse