FR2206589B1 - - Google Patents
Info
- Publication number
- FR2206589B1 FR2206589B1 FR7339853A FR7339853A FR2206589B1 FR 2206589 B1 FR2206589 B1 FR 2206589B1 FR 7339853 A FR7339853 A FR 7339853A FR 7339853 A FR7339853 A FR 7339853A FR 2206589 B1 FR2206589 B1 FR 2206589B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4822—Beam leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/24—Frequency- independent attenuators
- H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
- H03H7/253—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode
- H03H7/255—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode the element being a PIN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76289—Lateral isolation by air gap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Power Conversion In General (AREA)
- Amplitude Modulation (AREA)
- Attenuators (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Non-Reversible Transmitting Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7215200A NL7215200A (xx) | 1972-11-10 | 1972-11-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2206589A1 FR2206589A1 (xx) | 1974-06-07 |
FR2206589B1 true FR2206589B1 (xx) | 1978-02-24 |
Family
ID=19817338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7339853A Expired FR2206589B1 (xx) | 1972-11-10 | 1973-11-09 |
Country Status (15)
Country | Link |
---|---|
US (1) | US4143383A (xx) |
JP (1) | JPS5227031B2 (xx) |
AT (1) | ATA936373A (xx) |
BE (1) | BE807079A (xx) |
BR (1) | BR7308693D0 (xx) |
CA (1) | CA1006274A (xx) |
CH (1) | CH574165A5 (xx) |
DE (1) | DE2353770C3 (xx) |
ES (1) | ES420364A1 (xx) |
FR (1) | FR2206589B1 (xx) |
GB (1) | GB1445724A (xx) |
IN (1) | IN140549B (xx) |
IT (1) | IT996919B (xx) |
NL (1) | NL7215200A (xx) |
SE (1) | SE391997B (xx) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4932640A (xx) * | 1972-07-20 | 1974-03-25 | ||
US4050055A (en) * | 1976-07-26 | 1977-09-20 | Krautkramer-Branson, Incorporated | Attenuator circuit ultrasonic testing |
US4257061A (en) * | 1977-10-17 | 1981-03-17 | John Fluke Mfg. Co., Inc. | Thermally isolated monolithic semiconductor die |
JPS5474820A (en) * | 1977-11-28 | 1979-06-15 | Stanley Electric Co Ltd | Anticlouding apparatus |
US4275362A (en) * | 1979-03-16 | 1981-06-23 | Rca Corporation | Gain controlled amplifier using a pin diode |
US4500845A (en) * | 1983-03-15 | 1985-02-19 | Texas Instruments Incorporated | Programmable attenuator |
JPS60126643A (ja) * | 1983-12-13 | 1985-07-06 | Matsushita Electric Ind Co Ltd | 印刷媒体 |
US4738933A (en) * | 1985-08-27 | 1988-04-19 | Fei Microwave, Inc. | Monolithic PIN diode and method for its manufacture |
DE3675611D1 (de) * | 1985-08-31 | 1990-12-20 | Licentia Gmbh | Verfahren zum herstellen eines beidseitig kontaktierten halbleiterkoerpers. |
US4786828A (en) * | 1987-05-15 | 1988-11-22 | Hoffman Charles R | Bias scheme for achieving voltage independent capacitance |
US6835967B2 (en) * | 2003-03-25 | 2004-12-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor diodes with fin structure |
JP2008516441A (ja) * | 2004-10-05 | 2008-05-15 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体デバイス及びその使用 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT270747B (de) * | 1963-12-17 | 1969-05-12 | Western Electric Co | Verfahren zum Herstellen von mechanisch abgestützten, elektrisch leitenden Anschlüssen an Halbleiterscheiben |
DE1514453A1 (de) * | 1965-04-26 | 1969-08-14 | Siemens Ag | Verfahren zum Herstellen von Halbleiterschaltungen |
FR1540051A (fr) * | 1966-09-21 | 1968-09-20 | Rca Corp | Microcircuit et son procédé de fabrication |
US3475700A (en) * | 1966-12-30 | 1969-10-28 | Texas Instruments Inc | Monolithic microwave duplexer switch |
US3518585A (en) * | 1966-12-30 | 1970-06-30 | Texas Instruments Inc | Voltage controlled a.c. signal attenuator |
US3549960A (en) * | 1967-12-20 | 1970-12-22 | Massachusetts Inst Technology | Thermo-photovoltaic converter having back-surface junctions |
GB1259883A (en) * | 1968-07-26 | 1972-01-12 | Signetics Corp | Encapsulated beam lead construction for semiconductor device and assembly and method |
NL159822B (nl) * | 1969-01-02 | 1979-03-15 | Philips Nv | Halfgeleiderinrichting. |
JPS4828958B1 (xx) * | 1969-07-22 | 1973-09-06 | ||
FR2071043A5 (xx) * | 1969-12-16 | 1971-09-17 | Thomson Csf | |
US3714473A (en) * | 1971-05-12 | 1973-01-30 | Bell Telephone Labor Inc | Planar semiconductor device utilizing confined charge carrier beams |
DE2203247C3 (de) * | 1972-01-24 | 1980-02-28 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiterbauelement mit steuerbarer Dämpfung sowie Schaltungsanordnung zu dessen Betrieb |
-
1972
- 1972-11-10 NL NL7215200A patent/NL7215200A/xx not_active Application Discontinuation
-
1973
- 1973-10-26 DE DE2353770A patent/DE2353770C3/de not_active Expired
- 1973-10-31 IN IN2407/CAL/73A patent/IN140549B/en unknown
- 1973-11-07 AT AT936373A patent/ATA936373A/de not_active Application Discontinuation
- 1973-11-07 BR BR8693/73A patent/BR7308693D0/pt unknown
- 1973-11-07 SE SE7315118A patent/SE391997B/xx unknown
- 1973-11-07 CH CH1561673A patent/CH574165A5/xx not_active IP Right Cessation
- 1973-11-07 CA CA185,225A patent/CA1006274A/en not_active Expired
- 1973-11-07 GB GB5162073A patent/GB1445724A/en not_active Expired
- 1973-11-07 IT IT70268/73A patent/IT996919B/it active
- 1973-11-08 ES ES420364A patent/ES420364A1/es not_active Expired
- 1973-11-08 JP JP48125022A patent/JPS5227031B2/ja not_active Expired
- 1973-11-08 BE BE137545A patent/BE807079A/xx unknown
- 1973-11-09 FR FR7339853A patent/FR2206589B1/fr not_active Expired
-
1976
- 1976-09-23 US US05/725,781 patent/US4143383A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ES420364A1 (es) | 1976-04-16 |
GB1445724A (en) | 1976-08-11 |
CH574165A5 (xx) | 1976-03-31 |
US4143383A (en) | 1979-03-06 |
IT996919B (it) | 1975-12-10 |
BE807079A (nl) | 1974-05-08 |
BR7308693D0 (pt) | 1974-08-22 |
FR2206589A1 (xx) | 1974-06-07 |
NL7215200A (xx) | 1974-05-14 |
AU6232073A (en) | 1975-05-15 |
DE2353770B2 (de) | 1981-07-16 |
SE391997B (sv) | 1977-03-07 |
JPS5227031B2 (xx) | 1977-07-18 |
IN140549B (xx) | 1976-11-27 |
JPS50772A (xx) | 1975-01-07 |
DE2353770C3 (de) | 1982-03-25 |
CA1006274A (en) | 1977-03-01 |
ATA936373A (de) | 1979-06-15 |
DE2353770A1 (de) | 1974-05-16 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |