FR2130662A1 - High purity thin layers - prodn by zone melting/recrystallisation - Google Patents

High purity thin layers - prodn by zone melting/recrystallisation

Info

Publication number
FR2130662A1
FR2130662A1 FR7210403A FR7210403A FR2130662A1 FR 2130662 A1 FR2130662 A1 FR 2130662A1 FR 7210403 A FR7210403 A FR 7210403A FR 7210403 A FR7210403 A FR 7210403A FR 2130662 A1 FR2130662 A1 FR 2130662A1
Authority
FR
France
Prior art keywords
zone
prodn
recrystallisation
high purity
thin layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7210403A
Other languages
French (fr)
Other versions
FR2130662B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2130662A1 publication Critical patent/FR2130662A1/en
Application granted granted Critical
Publication of FR2130662B1 publication Critical patent/FR2130662B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Fabrication of thin, very homogeneous crystalline layer of high chemical purity, by sweeping an amorphous mono-crystalline or polycrystalline surface layer of poor homogeneity and medium chemical purity, zone by zone with a high energy beam and to fuse the material in these zones bringing it only up to the melting point and allowing it to crystallise once the hot zone has moved away. Pref. the surface layer together with its support or a base layer on which it has been deposited is preheated to bring it to a temp. just below the fusion pt. Used in semiconductor mfr.
FR7210403A 1971-03-25 1972-03-24 High purity thin layers - prodn by zone melting/recrystallisation Granted FR2130662A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712114593 DE2114593A1 (en) 1971-03-25 1971-03-25 Zone recrystallization process for thin layers

Publications (2)

Publication Number Publication Date
FR2130662A1 true FR2130662A1 (en) 1972-11-03
FR2130662B1 FR2130662B1 (en) 1975-12-26

Family

ID=5802779

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7210403A Granted FR2130662A1 (en) 1971-03-25 1972-03-24 High purity thin layers - prodn by zone melting/recrystallisation

Country Status (6)

Country Link
BE (1) BE781228A (en)
DE (1) DE2114593A1 (en)
FR (1) FR2130662A1 (en)
IT (1) IT950450B (en)
LU (1) LU65027A1 (en)
NL (1) NL7202781A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56145198A (en) * 1980-04-04 1981-11-11 Hitachi Ltd Forming method of single crystal silicon membrane and device therefor
DE3017923A1 (en) * 1980-05-09 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Mfg. crystalline silicon sheet or strip with columnar structure - suitable for making large solar cell, by sintering and brief pulsed surface heating
DE3126050A1 (en) * 1981-07-02 1983-01-13 Hanno Prof. Dr. 2000 Hamburg Schaumburg Process for preparing monocrystalline or coarsely polycrystalline layers
FR2547319B1 (en) * 1983-06-09 1987-10-09 Gleizes Raymond PROCESS AND APPARATUS FOR MANUFACTURING MONOCRYSTALLINE AND MACROCRYSTALLINE LAYERS, PARTICULARLY FOR PHOTOVOLTAIC CELLS

Also Published As

Publication number Publication date
BE781228A (en) 1972-07-17
IT950450B (en) 1973-06-20
DE2114593A1 (en) 1972-11-09
FR2130662B1 (en) 1975-12-26
LU65027A1 (en) 1972-07-11
NL7202781A (en) 1972-09-27

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Legal Events

Date Code Title Description
ST Notification of lapse