FR2106956A5 - Cadmium sulphide-selenide crystals produc- - tion - Google Patents

Cadmium sulphide-selenide crystals produc- - tion

Info

Publication number
FR2106956A5
FR2106956A5 FR7035374A FR7035374A FR2106956A5 FR 2106956 A5 FR2106956 A5 FR 2106956A5 FR 7035374 A FR7035374 A FR 7035374A FR 7035374 A FR7035374 A FR 7035374A FR 2106956 A5 FR2106956 A5 FR 2106956A5
Authority
FR
France
Prior art keywords
produc
tion
temp
cadmium sulphide
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7035374A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to FR7035374A priority Critical patent/FR2106956A5/en
Application granted granted Critical
Publication of FR2106956A5 publication Critical patent/FR2106956A5/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Crystals of CdSxSe1-x where 0 x 1 are produced by evaporation from three individual crucible containing Cd, Se and S and condensation in ceramic or glass receiving vessel under high vacuum. REceiving vessel temp. is maintained at 120-400 degree sC., and the above compn. is achieved by varying crucible temp. of S with respect to Se whilst maintaining Cd crucible temp. constant. Crystal layers are used in solar cells.
FR7035374A 1970-09-30 1970-09-30 Cadmium sulphide-selenide crystals produc- - tion Expired FR2106956A5 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7035374A FR2106956A5 (en) 1970-09-30 1970-09-30 Cadmium sulphide-selenide crystals produc- - tion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7035374A FR2106956A5 (en) 1970-09-30 1970-09-30 Cadmium sulphide-selenide crystals produc- - tion

Publications (1)

Publication Number Publication Date
FR2106956A5 true FR2106956A5 (en) 1972-05-05

Family

ID=9062072

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7035374A Expired FR2106956A5 (en) 1970-09-30 1970-09-30 Cadmium sulphide-selenide crystals produc- - tion

Country Status (1)

Country Link
FR (1) FR2106956A5 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4227948A (en) * 1977-12-27 1980-10-14 The United States Of America As Represented By The Secretary Of The Navy Growth technique for preparing graded gap semiconductors and devices
FR2557562A1 (en) * 1983-12-29 1985-07-05 Menn Roger Process for the manufacture of nonconductive layers with change in atomic composition
FR2557730A1 (en) * 1983-12-29 1985-07-05 Menn Roger Photoresistant layer with variation in atomic composition and its method of manufacture, photoresistant cell provided with such a layer and with a wavelength filter and arrangement of such cells.
EP4043609A1 (en) * 2018-08-10 2022-08-17 First Solar, Inc. Systems for vaporization and vapor distribution

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4227948A (en) * 1977-12-27 1980-10-14 The United States Of America As Represented By The Secretary Of The Navy Growth technique for preparing graded gap semiconductors and devices
FR2557562A1 (en) * 1983-12-29 1985-07-05 Menn Roger Process for the manufacture of nonconductive layers with change in atomic composition
FR2557730A1 (en) * 1983-12-29 1985-07-05 Menn Roger Photoresistant layer with variation in atomic composition and its method of manufacture, photoresistant cell provided with such a layer and with a wavelength filter and arrangement of such cells.
EP4043609A1 (en) * 2018-08-10 2022-08-17 First Solar, Inc. Systems for vaporization and vapor distribution

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Legal Events

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ST Notification of lapse