FR2047058B1 - - Google Patents
Info
- Publication number
- FR2047058B1 FR2047058B1 FR7023009A FR7023009A FR2047058B1 FR 2047058 B1 FR2047058 B1 FR 2047058B1 FR 7023009 A FR7023009 A FR 7023009A FR 7023009 A FR7023009 A FR 7023009A FR 2047058 B1 FR2047058 B1 FR 2047058B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/415—Address circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
- H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US83549569A | 1969-06-23 | 1969-06-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2047058A1 FR2047058A1 (fr) | 1971-03-12 |
FR2047058B1 true FR2047058B1 (fr) | 1975-01-10 |
Family
ID=25269646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7023009A Expired FR2047058B1 (fr) | 1969-06-23 | 1970-06-22 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3624620A (fr) |
DE (1) | DE2031038C3 (fr) |
FR (1) | FR2047058B1 (fr) |
GB (1) | GB1311683A (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3740730A (en) * | 1971-06-30 | 1973-06-19 | Ibm | Latchable decoder driver and memory array |
US3732440A (en) * | 1971-12-23 | 1973-05-08 | Ibm | Address decoder latch |
US3757310A (en) * | 1972-01-03 | 1973-09-04 | Honeywell Inf Systems | Memory address selction apparatus including isolation circuits |
US3914628A (en) * | 1972-10-27 | 1975-10-21 | Raytheon Co | T-T-L driver circuitry |
US3999080A (en) * | 1974-12-23 | 1976-12-21 | Texas Instruments Inc. | Transistor coupled logic circuit |
US3959671A (en) * | 1975-06-20 | 1976-05-25 | The United States Of America As Represented By The Secretary Of The Navy | High current pulser circuit |
DE2648425A1 (de) * | 1976-10-26 | 1978-04-27 | Itt Ind Gmbh Deutsche | Binaere logische grundschaltung |
US4156291A (en) * | 1977-07-08 | 1979-05-22 | Xerox Corporation | Circuitry for eliminating double ram row addressing |
JPS55146680A (en) * | 1979-04-26 | 1980-11-15 | Fujitsu Ltd | Decoding circuit |
US4409675A (en) * | 1980-12-22 | 1983-10-11 | Fairchild Camera & Instrument Corporation | Address gate for memories to protect stored data, and to simplify memory testing, and method of use thereof |
US4424455A (en) * | 1982-04-22 | 1984-01-03 | Motorola, Inc. | Glitch eliminating data selector |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1039567B (de) * | 1956-10-05 | 1958-09-25 | Ibm Deutschland | Aus bistabilen Magnetkernen bestehende Schaltmatrix |
US3177373A (en) * | 1960-10-28 | 1965-04-06 | Richard H Graham | Transistorized loading circuit |
US3176144A (en) * | 1960-11-16 | 1965-03-30 | Ncr Co | Selective signaling system |
US3313949A (en) * | 1963-06-25 | 1967-04-11 | James J Nyberg | Magnetic core driver and inhibit circuit |
US3436738A (en) * | 1966-06-28 | 1969-04-01 | Texas Instruments Inc | Plural emitter type active element memory |
-
1969
- 1969-06-23 US US835495A patent/US3624620A/en not_active Expired - Lifetime
-
1970
- 1970-04-23 GB GB1964270A patent/GB1311683A/en not_active Expired
- 1970-06-22 FR FR7023009A patent/FR2047058B1/fr not_active Expired
- 1970-06-23 DE DE2031038A patent/DE2031038C3/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3624620A (en) | 1971-11-30 |
FR2047058A1 (fr) | 1971-03-12 |
GB1311683A (en) | 1973-03-28 |
DE2031038B2 (fr) | 1979-02-22 |
DE2031038A1 (de) | 1971-01-14 |
DE2031038C3 (de) | 1979-10-18 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |