FR2012004A1 - - Google Patents
Info
- Publication number
- FR2012004A1 FR2012004A1 FR6920455A FR6920455A FR2012004A1 FR 2012004 A1 FR2012004 A1 FR 2012004A1 FR 6920455 A FR6920455 A FR 6920455A FR 6920455 A FR6920455 A FR 6920455A FR 2012004 A1 FR2012004 A1 FR 2012004A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28537—Deposition of Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH971168A CH497792A (de) | 1968-06-28 | 1968-06-28 | Verfahren zur Herstellung von Halbleitervorrichtungen |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2012004A1 true FR2012004A1 (de) | 1970-03-13 |
FR2012004B1 FR2012004B1 (de) | 1974-02-22 |
Family
ID=4354823
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR696920455A Expired FR2012004B1 (de) | 1968-06-28 | 1969-06-19 | |
FR6920431A Withdrawn FR2012003A1 (de) | 1968-06-28 | 1969-06-19 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR6920431A Withdrawn FR2012003A1 (de) | 1968-06-28 | 1969-06-19 |
Country Status (8)
Country | Link |
---|---|
US (1) | US3669732A (de) |
BE (1) | BE733950A (de) |
CH (2) | CH497792A (de) |
DE (1) | DE1966841A1 (de) |
FR (2) | FR2012004B1 (de) |
GB (2) | GB1262758A (de) |
NL (1) | NL164156C (de) |
SE (1) | SE355266B (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH506188A (de) * | 1970-09-02 | 1971-04-15 | Ibm | Feldeffekt-Transistor |
US4032341A (en) * | 1973-01-16 | 1977-06-28 | Katsumi Momose | Pattern exposure using a polychromatic light source |
JPS5612011B2 (de) * | 1973-01-16 | 1981-03-18 | ||
GB2140460B (en) * | 1983-05-27 | 1986-06-25 | Dowty Electronics Ltd | Insulated metal substrates |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB953031A (en) * | 1961-03-30 | 1964-03-25 | Siemens Ag | A process for use in the production of a semi-conductor device |
FR1515415A (fr) * | 1966-03-19 | 1968-03-01 | Siemens Ag | Surface métallique de contact d'un composant semiconducteur |
FR1518245A (fr) * | 1966-04-07 | 1968-03-22 | Philips Nv | Transistors à effet de champ et leur procédé de fabrication |
CH471242A (de) * | 1968-03-01 | 1969-04-15 | Ibm | Verfahren zur selektiven Maskierung zu bearbeitender Flächen |
-
1968
- 1968-06-28 CH CH971168A patent/CH497792A/de not_active IP Right Cessation
- 1968-06-28 CH CH152669A patent/CH484517A/de not_active IP Right Cessation
-
1969
- 1969-05-21 NL NL6907747.A patent/NL164156C/xx not_active IP Right Cessation
- 1969-05-22 US US827495A patent/US3669732A/en not_active Expired - Lifetime
- 1969-05-31 DE DE19691966841 patent/DE1966841A1/de active Pending
- 1969-06-02 BE BE733950D patent/BE733950A/xx unknown
- 1969-06-13 GB GB29996/69A patent/GB1262758A/en not_active Expired
- 1969-06-13 GB GB1258158D patent/GB1258158A/en not_active Expired
- 1969-06-19 FR FR696920455A patent/FR2012004B1/fr not_active Expired
- 1969-06-19 FR FR6920431A patent/FR2012003A1/fr not_active Withdrawn
- 1969-06-25 SE SE09037/69A patent/SE355266B/xx unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB953031A (en) * | 1961-03-30 | 1964-03-25 | Siemens Ag | A process for use in the production of a semi-conductor device |
FR1515415A (fr) * | 1966-03-19 | 1968-03-01 | Siemens Ag | Surface métallique de contact d'un composant semiconducteur |
FR1518245A (fr) * | 1966-04-07 | 1968-03-22 | Philips Nv | Transistors à effet de champ et leur procédé de fabrication |
CH471242A (de) * | 1968-03-01 | 1969-04-15 | Ibm | Verfahren zur selektiven Maskierung zu bearbeitender Flächen |
Non-Patent Citations (2)
Title |
---|
(REVUE SUISSE "BULL DES SCHWEIZERISCHEN ELEKTROTECHN. VEREINS" VOL. 60, 18 JAN 1969 : "MIKROWELLEN FET MIT SCHOTTKY-STEUER ELECTRODE" PAGE 76) * |
REVUE AMERICAINE "SOLID STATE TECHNOLOGY" VOL. 11 DEC. 1968 "IBM ANNOUNCES MICRO-WAVE SCHOTTKY GATE FET" PAGE 74) * |
Also Published As
Publication number | Publication date |
---|---|
DE1927955B2 (de) | 1972-11-16 |
GB1258158A (de) | 1971-12-22 |
NL6907747A (de) | 1969-12-30 |
US3669732A (en) | 1972-06-13 |
CH497792A (de) | 1970-10-15 |
NL164156C (nl) | 1980-11-17 |
BE733950A (de) | 1969-11-17 |
NL164156B (nl) | 1980-06-16 |
FR2012003A1 (de) | 1970-03-13 |
GB1262758A (en) | 1972-02-09 |
DE1927955A1 (de) | 1970-01-02 |
CH484517A (de) | 1970-01-15 |
SE355266B (de) | 1973-04-09 |
DE1966841A1 (de) | 1974-08-08 |
FR2012004B1 (de) | 1974-02-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |