FR2006332A1 - - Google Patents
Info
- Publication number
- FR2006332A1 FR2006332A1 FR6905651A FR6905651A FR2006332A1 FR 2006332 A1 FR2006332 A1 FR 2006332A1 FR 6905651 A FR6905651 A FR 6905651A FR 6905651 A FR6905651 A FR 6905651A FR 2006332 A1 FR2006332 A1 FR 2006332A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/136—Resistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/167—Two diffusions in one hole
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72212668A | 1968-04-17 | 1968-04-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2006332A1 true FR2006332A1 (fr) | 1969-12-26 |
Family
ID=24900617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR6905651A Withdrawn FR2006332A1 (fr) | 1968-04-17 | 1969-02-27 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3611062A (fr) |
DE (2) | DE1916969B2 (fr) |
FR (1) | FR2006332A1 (fr) |
GB (1) | GB1262013A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0013340A1 (fr) * | 1978-12-28 | 1980-07-23 | International Business Machines Corporation | Résistance à tension de claquage améliorée obtenue par une double implantation ionique dans un substrat semi-conducteur et son procédé de fabrication |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA957782A (en) * | 1970-01-26 | 1974-11-12 | Theodore Kamprath | Capacitor structure for integrated circuits |
US3962713A (en) * | 1972-06-02 | 1976-06-08 | Texas Instruments Incorporated | Large value capacitor |
US4115797A (en) * | 1976-10-04 | 1978-09-19 | Fairchild Camera And Instrument Corporation | Integrated injection logic with heavily doped injector base self-aligned with injector emitter and collector |
FR2430653A1 (fr) * | 1978-07-04 | 1980-02-01 | Thomson Csf | Resistance au silicium a tres faible coefficient de temperature |
JPS5929138Y2 (ja) * | 1982-07-23 | 1984-08-22 | 日本ノ−シヨン工業株式会社 | 合成樹脂製なす環 |
JPS60143219A (ja) * | 1984-11-12 | 1985-07-29 | 株式会社 ニフコ | 合成樹脂製ナス環 |
US20030178057A1 (en) * | 2001-10-24 | 2003-09-25 | Shuichi Fujii | Solar cell, manufacturing method thereof and electrode material |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
US2930950A (en) * | 1956-12-10 | 1960-03-29 | Teszner Stanislas | High power field-effect transistor |
US3022472A (en) * | 1958-01-22 | 1962-02-20 | Bell Telephone Labor Inc | Variable equalizer employing semiconductive element |
NL243218A (fr) * | 1958-12-24 | |||
NL255154A (fr) * | 1959-04-15 | |||
US3025438A (en) * | 1959-09-18 | 1962-03-13 | Tungsol Electric Inc | Field effect transistor |
US3171068A (en) * | 1960-10-19 | 1965-02-23 | Merck & Co Inc | Semiconductor diodes |
BE624904A (fr) * | 1961-11-17 | |||
US3252003A (en) * | 1962-09-10 | 1966-05-17 | Westinghouse Electric Corp | Unipolar transistor |
DE1295237B (de) * | 1964-10-22 | 1969-05-14 | Siemens Ag | Druckempfindliche Halbleiteranordnung und Verfahren zu ihrer Herstellung |
DE1564790C3 (de) * | 1966-12-22 | 1978-03-09 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Spannungsabhängiger Halbleiterkondensator |
-
1968
- 1968-04-17 US US722126A patent/US3611062A/en not_active Expired - Lifetime
-
1969
- 1969-02-27 FR FR6905651A patent/FR2006332A1/fr not_active Withdrawn
- 1969-04-02 DE DE19691916969 patent/DE1916969B2/de not_active Ceased
- 1969-04-09 DE DE19691918014 patent/DE1918014B2/de not_active Ceased
- 1969-04-15 GB GB09287/69A patent/GB1262013A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0013340A1 (fr) * | 1978-12-28 | 1980-07-23 | International Business Machines Corporation | Résistance à tension de claquage améliorée obtenue par une double implantation ionique dans un substrat semi-conducteur et son procédé de fabrication |
FR2445617A1 (fr) * | 1978-12-28 | 1980-07-25 | Ibm France | Resistance a tension de claquage amelioree obtenue par une double implantation ionique dans un substrat semi-conducteur et son procede de fabrication |
Also Published As
Publication number | Publication date |
---|---|
DE1916969A1 (de) | 1969-11-06 |
DE1918014B2 (de) | 1976-12-02 |
US3611062A (en) | 1971-10-05 |
DE1918014A1 (de) | 1969-11-13 |
GB1262013A (en) | 1972-02-02 |
DE1916969B2 (de) | 1976-10-28 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |