Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
  • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
  • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
  • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
  • G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
  • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
  • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
  • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
  • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
  • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
  • H03K3/356—Bistable circuits
  • H03K3/356017—Bistable circuits using additional transistors in the input circuit
  • H03K3/356052—Bistable circuits using additional transistors in the input circuit using pass gates
  • H03K3/35606—Bistable circuits using additional transistors in the input circuit using pass gates with synchronous operation

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Computer Hardware Design (AREA)
• Static Random-Access Memory (AREA)
• Semiconductor Memories (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=24571472

Family Applications (1)

Country Status (9)

Families Citing this family (3)

• 1968
  • 1968-03-28 FR FR1564148D patent/FR1564148A/fr not_active Expired
  • 1968-03-28 BE BE712913D patent/BE712913A/xx unknown
  • 1968-04-12 JP JP43024105A patent/JPS4813257B1/ja active Pending
  • 1968-04-24 GB GB1930568A patent/GB1218866A/en not_active Expired
  • 1968-04-26 DE DE19681774175 patent/DE1774175C3/de not_active Expired
  • 1968-05-06 NL NL6806360A patent/NL6806360A/xx unknown
  • 1968-05-21 ES ES354131A patent/ES354131A1/es not_active Expired
  • 1968-05-22 CH CH763468A patent/CH464294A/de unknown
  • 1968-05-24 SE SE06989/68A patent/SE353616B/xx unknown

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