FR1365101A - Perfectionnements aux semi-conducteurs, en particulier avec jonction p-n, et à leur fabrication - Google Patents

Perfectionnements aux semi-conducteurs, en particulier avec jonction p-n, et à leur fabrication

Info

Publication number
FR1365101A
FR1365101A FR943561A FR943561A FR1365101A FR 1365101 A FR1365101 A FR 1365101A FR 943561 A FR943561 A FR 943561A FR 943561 A FR943561 A FR 943561A FR 1365101 A FR1365101 A FR 1365101A
Authority
FR
France
Prior art keywords
semiconductors
junction
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR943561A
Other languages
English (en)
Inventor
Cyril Francis Drake
Kenneth Leopold Ellington
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB2995862A external-priority patent/GB1008542A/en
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Application granted granted Critical
Publication of FR1365101A publication Critical patent/FR1365101A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
FR943561A 1962-08-03 1963-08-02 Perfectionnements aux semi-conducteurs, en particulier avec jonction p-n, et à leur fabrication Expired FR1365101A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB2995862A GB1008542A (en) 1962-08-03 1962-08-03 Improvements in or relating to p-n junction semiconductors
GB3875362 1962-10-12

Publications (1)

Publication Number Publication Date
FR1365101A true FR1365101A (fr) 1964-06-26

Family

ID=26260176

Family Applications (2)

Application Number Title Priority Date Filing Date
FR943561A Expired FR1365101A (fr) 1962-08-03 1963-08-02 Perfectionnements aux semi-conducteurs, en particulier avec jonction p-n, et à leur fabrication
FR950323A Expired FR84515E (fr) 1962-08-03 1963-10-11 Perfectionnements aux semi-conducteurs, en particulier avec jonction p-n, et à leur fabrication

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR950323A Expired FR84515E (fr) 1962-08-03 1963-10-11 Perfectionnements aux semi-conducteurs, en particulier avec jonction p-n, et à leur fabrication

Country Status (5)

Country Link
US (1) US3320103A (fr)
BE (2) BE638518A (fr)
DE (2) DE1444501B2 (fr)
FR (2) FR1365101A (fr)
NL (2) NL299036A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2058408A1 (fr) * 1969-08-20 1971-05-28 Gen Electric
FR2090238A1 (fr) * 1970-05-22 1972-01-14 Philips Nv
FR2412163A1 (fr) * 1977-12-13 1979-07-13 Bosch Gmbh Robert Procede pour la fabrication d'un composant semi-conducteur

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3905836A (en) * 1968-04-03 1975-09-16 Telefunken Patent Photoelectric semiconductor devices
US3860947A (en) * 1970-03-19 1975-01-14 Hiroshi Gamo Thyristor with gold doping profile
FR2252653B1 (fr) * 1973-11-28 1976-10-01 Thomson Csf
US4177477A (en) * 1974-03-11 1979-12-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor switching device
JPS5719869B2 (fr) * 1974-09-18 1982-04-24
CH579827A5 (fr) * 1974-11-04 1976-09-15 Bbc Brown Boveri & Cie
US4018626A (en) * 1975-09-10 1977-04-19 International Business Machines Corporation Impact sound stressing for semiconductor devices
US4231809A (en) * 1979-05-25 1980-11-04 Bell Telephone Laboratories, Incorporated Method of removing impurity metals from semiconductor devices
JPS5824006B2 (ja) * 1980-01-30 1983-05-18 株式会社日立製作所 不純物拡散法
DE3017512A1 (de) * 1980-05-07 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum gettern von in halbleiterkristallen verhandenen verunreinigungen
CH657478A5 (en) * 1982-08-16 1986-08-29 Bbc Brown Boveri & Cie Power semiconductor component
US4740256A (en) * 1986-08-14 1988-04-26 Minnesota Mining And Manufacturing Company Method of making a weather strip

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE118888C (fr) *
US2691736A (en) * 1950-12-27 1954-10-12 Bell Telephone Labor Inc Electrical translation device, including semiconductor
US2784121A (en) * 1952-11-20 1957-03-05 Bell Telephone Labor Inc Method of fabricating semiconductor bodies for translating devices
AT187556B (de) * 1954-03-05 1956-11-10 Western Electric Co Verfahren zur Herstellung eines Halbleiters mit einer PN-Verbindung
US2868988A (en) * 1955-12-22 1959-01-13 Miller William Method of reducing transient reverse current
US3007090A (en) * 1957-09-04 1961-10-31 Ibm Back resistance control for junction semiconductor devices
US2978367A (en) * 1958-05-26 1961-04-04 Rca Corp Introduction of barrier in germanium crystals
USRE26282E (en) * 1958-07-29 1967-10-17 Method op making semiconductor device
NL258192A (fr) * 1959-12-15
NL262701A (fr) * 1960-03-25
DE1193610B (de) * 1960-10-28 1965-05-26 Rudolf Rost Dr Ing Schalt- und Schwingtransistor
US3200017A (en) * 1960-09-26 1965-08-10 Gen Electric Gallium arsenide semiconductor devices
US3193419A (en) * 1960-12-30 1965-07-06 Texas Instruments Inc Outdiffusion method
US3174882A (en) * 1961-02-02 1965-03-23 Bell Telephone Labor Inc Tunnel diode
NL276412A (fr) * 1961-03-30
US3212939A (en) * 1961-12-06 1965-10-19 John L Davis Method of lowering the surface recombination velocity of indium antimonide crystals

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2058408A1 (fr) * 1969-08-20 1971-05-28 Gen Electric
FR2090238A1 (fr) * 1970-05-22 1972-01-14 Philips Nv
FR2412163A1 (fr) * 1977-12-13 1979-07-13 Bosch Gmbh Robert Procede pour la fabrication d'un composant semi-conducteur

Also Published As

Publication number Publication date
US3320103A (en) 1967-05-16
DE1444501A1 (de) 1968-12-19
DE1208411B (de) 1966-01-05
BE635742A (fr)
FR84515E (fr) 1965-02-26
DE1444501B2 (de) 1971-10-21
NL296231A (fr)
BE638518A (fr)
NL299036A (fr)

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