NL276412A - - Google Patents

Info

Publication number
NL276412A
NL276412A NL276412DA NL276412A NL 276412 A NL276412 A NL 276412A NL 276412D A NL276412D A NL 276412DA NL 276412 A NL276412 A NL 276412A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL276412A publication Critical patent/NL276412A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F3/00—Changing the physical structure of non-ferrous metals or alloys by special physical methods, e.g. treatment with neutrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
NL276412D 1961-03-30 NL276412A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEZ8650A DE1186952B (de) 1961-03-30 1961-03-30 Verfahren und Vorrichtung zum Umwandeln von n- in p-leitendes Halbleitermaterial fuer Halbleiterbauelemente durch Beschuss mit einem Elektronenstrahl

Publications (1)

Publication Number Publication Date
NL276412A true NL276412A (fr)

Family

ID=7620580

Family Applications (1)

Application Number Title Priority Date Filing Date
NL276412D NL276412A (fr) 1961-03-30

Country Status (5)

Country Link
US (1) US3206336A (fr)
CH (1) CH402191A (fr)
DE (1) DE1186952B (fr)
GB (1) GB958716A (fr)
NL (1) NL276412A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5308241A (en) * 1957-06-27 1994-05-03 Lemelson Jerome H Surface shaping and finshing apparatus and method
US5552675A (en) * 1959-04-08 1996-09-03 Lemelson; Jerome H. High temperature reaction apparatus
US3272661A (en) * 1962-07-23 1966-09-13 Hitachi Ltd Manufacturing method of a semi-conductor device by controlling the recombination velocity
BE638518A (fr) * 1962-08-03
US3323947A (en) * 1964-12-17 1967-06-06 Bell Telephone Labor Inc Method for making electrode connections to potassium tantalate-niobate
US3351503A (en) * 1965-09-10 1967-11-07 Horizons Inc Production of p-nu junctions by diffusion
US3496029A (en) * 1966-10-12 1970-02-17 Ion Physics Corp Process of doping semiconductor with analyzing magnet
US3430029A (en) * 1967-01-06 1969-02-25 Smith Corp A O Rapid load system for electron beam welder
US3667116A (en) * 1969-05-15 1972-06-06 Avio Di Felice Method of manufacturing zener diodes having improved characteristics
GB1280013A (en) * 1969-09-05 1972-07-05 Atomic Energy Authority Uk Improvements in or relating to apparatus bombarding a target with ions
US3612815A (en) * 1970-01-16 1971-10-12 Smith Corp A O Electron beam apparatus
US3826889A (en) * 1970-10-12 1974-07-30 I Brukovsky System for automatic control of electron beam heating device
DE2449265A1 (de) * 1974-10-16 1976-04-22 Steigerwald Strahltech Vorrichtung zum herstellen von mittels elektronenstrahlen fein perforierten folien-zuschnitten, insbesondere schuh-oberteilen
US3951695A (en) * 1975-02-11 1976-04-20 Accelerators, Inc. Automatic end station for ion implantation system

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device
BE500536A (fr) * 1950-01-31
US2771568A (en) * 1951-01-31 1956-11-20 Zeiss Carl Utilizing electron energy for physically and chemically changing members
DE896827C (de) * 1951-09-08 1953-11-16 Licentia Gmbh Verfahren zur formgebenden Bearbeitung von kristallenen Halbleiterkoerpern
GB778383A (en) * 1953-10-02 1957-07-03 Standard Telephones Cables Ltd Improvements in or relating to the production of material for semi-conductors
US2860251A (en) * 1953-10-15 1958-11-11 Rauland Corp Apparatus for manufacturing semi-conductor devices
US2816847A (en) * 1953-11-18 1957-12-17 Bell Telephone Labor Inc Method of fabricating semiconductor signal translating devices
US2803569A (en) * 1953-12-03 1957-08-20 Jacobs Harold Formation of junctions in semiconductors
US2743200A (en) * 1954-05-27 1956-04-24 Bell Telephone Labor Inc Method of forming junctions in silicon
US2883544A (en) * 1955-12-19 1959-04-21 Sprague Electric Co Transistor manufacture
GB844747A (en) * 1955-12-20 1960-08-17 Nat Res Dev Production of p-n junctions in semiconductors
US2868988A (en) * 1955-12-22 1959-01-13 Miller William Method of reducing transient reverse current
US2968723A (en) * 1957-04-11 1961-01-17 Zeiss Carl Means for controlling crystal structure of materials
US2989385A (en) * 1957-05-14 1961-06-20 Bell Telephone Labor Inc Process for ion bombarding and etching metal
DE1099659B (de) * 1958-08-30 1961-02-16 Zeiss Carl Fa Abschirmvorrichtung
US3049608A (en) * 1959-08-24 1962-08-14 Air Reduction Electron beam welding
US3118050A (en) * 1960-04-06 1964-01-14 Alloyd Electronics Corp Electron beam devices and processes

Also Published As

Publication number Publication date
US3206336A (en) 1965-09-14
GB958716A (en) 1964-05-27
CH402191A (de) 1965-11-15
DE1186952B (de) 1965-02-11

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