FR1315934A - Appareil horizontal pour la purification et le tirage de cristaux semi-conducteurs - Google Patents

Appareil horizontal pour la purification et le tirage de cristaux semi-conducteurs

Info

Publication number
FR1315934A
FR1315934A FR882069A FR882069A FR1315934A FR 1315934 A FR1315934 A FR 1315934A FR 882069 A FR882069 A FR 882069A FR 882069 A FR882069 A FR 882069A FR 1315934 A FR1315934 A FR 1315934A
Authority
FR
France
Prior art keywords
purification
extraction
semiconductor crystals
horizontal apparatus
horizontal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR882069A
Other languages
English (en)
Inventor
Michel Brunet
Emile Deyris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique SA
Original Assignee
Radiotechnique SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique SA filed Critical Radiotechnique SA
Priority to FR882069A priority Critical patent/FR1315934A/fr
Priority to GB46939/62A priority patent/GB1007329A/en
Priority to DEN22473A priority patent/DE1206858B/de
Priority to US245289A priority patent/US3188373A/en
Application granted granted Critical
Publication of FR1315934A publication Critical patent/FR1315934A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Furnace Details (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
FR882069A 1961-12-15 1961-12-15 Appareil horizontal pour la purification et le tirage de cristaux semi-conducteurs Expired FR1315934A (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR882069A FR1315934A (fr) 1961-12-15 1961-12-15 Appareil horizontal pour la purification et le tirage de cristaux semi-conducteurs
GB46939/62A GB1007329A (en) 1961-12-15 1962-12-12 Improvements in or relating to devices for zone-melting
DEN22473A DE1206858B (de) 1961-12-15 1962-12-13 Vorrichtung zum Zonenschmelzen
US245289A US3188373A (en) 1961-12-15 1962-12-17 Device for zone melting

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR882069A FR1315934A (fr) 1961-12-15 1961-12-15 Appareil horizontal pour la purification et le tirage de cristaux semi-conducteurs

Publications (1)

Publication Number Publication Date
FR1315934A true FR1315934A (fr) 1963-01-25

Family

ID=8768792

Family Applications (1)

Application Number Title Priority Date Filing Date
FR882069A Expired FR1315934A (fr) 1961-12-15 1961-12-15 Appareil horizontal pour la purification et le tirage de cristaux semi-conducteurs

Country Status (4)

Country Link
US (1) US3188373A (fr)
DE (1) DE1206858B (fr)
FR (1) FR1315934A (fr)
GB (1) GB1007329A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1243642B (de) * 1963-04-27 1967-07-06 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterial
DE1284942B (de) * 1964-06-30 1968-12-12 Halbleiterwerk Frankfurt Oder Vorrichtung zur thermischen Behandlung von Kristallen und Schmelzen, insbesondere aus Halbleitermaterial

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3273969A (en) * 1963-12-05 1966-09-20 Philco Corp Apparatus for growing fluoride crystals
US3414387A (en) * 1966-01-05 1968-12-03 Sysoev Leonid Andreevich Process for growing single crystals of sulfides, selenides and tellurides of metals of groups ii and iii of periodic system
US4162293A (en) * 1974-03-27 1979-07-24 Siemens Aktiengesellschaft Apparatus for preparation of a compound or an alloy
DE2414776C2 (de) * 1974-03-27 1984-04-19 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Herstellen einer Verbindung oder Legierung
DE2414856C2 (de) * 1974-03-27 1983-01-27 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Herstellen einer Halbleiterverbindung, insbesondere Galliumphosphid
US4224100A (en) * 1978-06-16 1980-09-23 Litton Systems, Inc. Method and apparatus for making crystals
US5248377A (en) * 1989-12-01 1993-09-28 Grumman Aerospace Corporation Crystal-growth furnace for interface curvature control
DE102018206345A1 (de) 2018-04-25 2019-10-31 Robert Bosch Gmbh Schmelzsicherung, Gasbehälter und Verfahren zum Zusammenbauen einer Schmelzsicherung und zum Einbauen derselben in einen Gasbehälter

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL89230C (fr) * 1952-12-17 1900-01-01
US2826666A (en) * 1954-02-15 1958-03-11 Tung Sol Electric Inc Improvement in apparatus for growing single crystals
GB797950A (en) * 1954-06-10 1958-07-09 Rca Corp Semi-conductor alloys
US2902350A (en) * 1954-12-21 1959-09-01 Rca Corp Method for single crystal growth

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1243642B (de) * 1963-04-27 1967-07-06 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterial
DE1284942B (de) * 1964-06-30 1968-12-12 Halbleiterwerk Frankfurt Oder Vorrichtung zur thermischen Behandlung von Kristallen und Schmelzen, insbesondere aus Halbleitermaterial

Also Published As

Publication number Publication date
DE1206858B (de) 1965-12-16
GB1007329A (en) 1965-10-13
US3188373A (en) 1965-06-08

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