FR1262176A - Dispositif semi-conducteur et conducteur - Google Patents

Dispositif semi-conducteur et conducteur

Info

Publication number
FR1262176A
FR1262176A FR831640A FR831640A FR1262176A FR 1262176 A FR1262176 A FR 1262176A FR 831640 A FR831640 A FR 831640A FR 831640 A FR831640 A FR 831640A FR 1262176 A FR1262176 A FR 1262176A
Authority
FR
France
Prior art keywords
semiconductor
conductor device
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR831640A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US830507A external-priority patent/US2981877A/en
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Priority to FR831640A priority Critical patent/FR1262176A/fr
Application granted granted Critical
Publication of FR1262176A publication Critical patent/FR1262176A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
FR831640A 1959-07-30 1960-06-30 Dispositif semi-conducteur et conducteur Expired FR1262176A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR831640A FR1262176A (fr) 1959-07-30 1960-06-30 Dispositif semi-conducteur et conducteur

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US830507A US2981877A (en) 1959-07-30 1959-07-30 Semiconductor device-and-lead structure
FR831640A FR1262176A (fr) 1959-07-30 1960-06-30 Dispositif semi-conducteur et conducteur

Publications (1)

Publication Number Publication Date
FR1262176A true FR1262176A (fr) 1961-05-26

Family

ID=26186616

Family Applications (1)

Application Number Title Priority Date Filing Date
FR831640A Expired FR1262176A (fr) 1959-07-30 1960-06-30 Dispositif semi-conducteur et conducteur

Country Status (1)

Country Link
FR (1) FR1262176A (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208407B (de) * 1961-12-27 1966-01-05 Ass Elect Ind Verfahren zur Herstellung von Halbleiterbauelementen
DE1228003B (de) * 1963-02-15 1966-11-03 Itt Ind Ges Mit Beschraenkter Transistor hoher Abbruchspannung und hoher Emitterergiebigkeit
US3319311A (en) * 1963-05-24 1967-05-16 Ibm Semiconductor devices and their fabrication
DE1282196B (de) * 1963-12-17 1968-11-07 Western Electric Co Halbleiterbauelement mit einer Schutzvorrichtung fuer seine pn-UEbergaenge
DE1293904B (de) * 1961-07-15 1969-04-30 Telefunken Patent Verfahren zum Kontaktieren der Legierungselektroden von Halbleiteranordnungen
DE1489247B1 (de) * 1963-07-08 1970-07-23 Rca Corp Halbleiterbauelement mit einem scheibenfoermigen Halbleiterkoerper
DE1489031B1 (de) * 1963-11-08 1972-01-05 Ibm Transistor mit einem scheibenfoermigen Halbleiterkoerper und Verfahren zu seiner Herstellung

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1293904B (de) * 1961-07-15 1969-04-30 Telefunken Patent Verfahren zum Kontaktieren der Legierungselektroden von Halbleiteranordnungen
DE1208407B (de) * 1961-12-27 1966-01-05 Ass Elect Ind Verfahren zur Herstellung von Halbleiterbauelementen
DE1228003B (de) * 1963-02-15 1966-11-03 Itt Ind Ges Mit Beschraenkter Transistor hoher Abbruchspannung und hoher Emitterergiebigkeit
US3319311A (en) * 1963-05-24 1967-05-16 Ibm Semiconductor devices and their fabrication
DE1259469B (de) * 1963-05-24 1968-01-25 Ibm Verfahren zur Herstellung von inversionsschichtfreien Halbleiteruebergaengen
DE1489247B1 (de) * 1963-07-08 1970-07-23 Rca Corp Halbleiterbauelement mit einem scheibenfoermigen Halbleiterkoerper
DE1489031B1 (de) * 1963-11-08 1972-01-05 Ibm Transistor mit einem scheibenfoermigen Halbleiterkoerper und Verfahren zu seiner Herstellung
DE1282196B (de) * 1963-12-17 1968-11-07 Western Electric Co Halbleiterbauelement mit einer Schutzvorrichtung fuer seine pn-UEbergaenge

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