FR1199588A - Procédé de préparation de jonction rho-nu - Google Patents
Procédé de préparation de jonction rho-nuInfo
- Publication number
- FR1199588A FR1199588A FR1199588DA FR1199588A FR 1199588 A FR1199588 A FR 1199588A FR 1199588D A FR1199588D A FR 1199588DA FR 1199588 A FR1199588 A FR 1199588A
- Authority
- FR
- France
- Prior art keywords
- junction
- rho
- preparing
- preparing rho
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB778357A GB853029A (en) | 1957-03-08 | 1957-03-08 | Improvements in and relating to semi-conductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1199588A true FR1199588A (fr) | 1959-12-15 |
Family
ID=9839631
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1199588D Expired FR1199588A (fr) | 1957-03-08 | 1958-03-07 | Procédé de préparation de jonction rho-nu |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR1199588A (fr) |
GB (1) | GB853029A (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1156174B (de) * | 1959-10-30 | 1963-10-24 | Int Standard Electric Corp | Verfahren zum Herstellen von elektrischen Halbleiterbauelementen verminderter Durchbruchsspannung |
DE1228340B (de) * | 1961-06-23 | 1966-11-10 | Ibm | Schnellschaltende Halbleiterdiode mit verringerter Erholungszeit und epitaktisches Verfahren zu ihrer Herstellung |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL268758A (fr) * | 1960-09-20 | |||
NL6705415A (fr) * | 1966-04-29 | 1967-10-30 |
-
1957
- 1957-03-08 GB GB778357A patent/GB853029A/en not_active Expired
-
1958
- 1958-03-07 FR FR1199588D patent/FR1199588A/fr not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1156174B (de) * | 1959-10-30 | 1963-10-24 | Int Standard Electric Corp | Verfahren zum Herstellen von elektrischen Halbleiterbauelementen verminderter Durchbruchsspannung |
DE1228340B (de) * | 1961-06-23 | 1966-11-10 | Ibm | Schnellschaltende Halbleiterdiode mit verringerter Erholungszeit und epitaktisches Verfahren zu ihrer Herstellung |
Also Published As
Publication number | Publication date |
---|---|
GB853029A (en) | 1960-11-02 |
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