FR1199588A - Procédé de préparation de jonction rho-nu - Google Patents

Procédé de préparation de jonction rho-nu

Info

Publication number
FR1199588A
FR1199588A FR1199588DA FR1199588A FR 1199588 A FR1199588 A FR 1199588A FR 1199588D A FR1199588D A FR 1199588DA FR 1199588 A FR1199588 A FR 1199588A
Authority
FR
France
Prior art keywords
junction
rho
preparing
preparing rho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Thomson Houston Co Ltd
Original Assignee
British Thomson Houston Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Thomson Houston Co Ltd filed Critical British Thomson Houston Co Ltd
Application granted granted Critical
Publication of FR1199588A publication Critical patent/FR1199588A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92Capacitors having potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
FR1199588D 1957-03-08 1958-03-07 Procédé de préparation de jonction rho-nu Expired FR1199588A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB778357A GB853029A (en) 1957-03-08 1957-03-08 Improvements in and relating to semi-conductor devices

Publications (1)

Publication Number Publication Date
FR1199588A true FR1199588A (fr) 1959-12-15

Family

ID=9839631

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1199588D Expired FR1199588A (fr) 1957-03-08 1958-03-07 Procédé de préparation de jonction rho-nu

Country Status (2)

Country Link
FR (1) FR1199588A (fr)
GB (1) GB853029A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1156174B (de) * 1959-10-30 1963-10-24 Int Standard Electric Corp Verfahren zum Herstellen von elektrischen Halbleiterbauelementen verminderter Durchbruchsspannung
DE1228340B (de) * 1961-06-23 1966-11-10 Ibm Schnellschaltende Halbleiterdiode mit verringerter Erholungszeit und epitaktisches Verfahren zu ihrer Herstellung

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL268758A (fr) * 1960-09-20
NL6705415A (fr) * 1966-04-29 1967-10-30

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1156174B (de) * 1959-10-30 1963-10-24 Int Standard Electric Corp Verfahren zum Herstellen von elektrischen Halbleiterbauelementen verminderter Durchbruchsspannung
DE1228340B (de) * 1961-06-23 1966-11-10 Ibm Schnellschaltende Halbleiterdiode mit verringerter Erholungszeit und epitaktisches Verfahren zu ihrer Herstellung

Also Published As

Publication number Publication date
GB853029A (en) 1960-11-02

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