FR1172900A - Dispositif semi-conducteur - Google Patents
Dispositif semi-conducteurInfo
- Publication number
- FR1172900A FR1172900A FR1172900DA FR1172900A FR 1172900 A FR1172900 A FR 1172900A FR 1172900D A FR1172900D A FR 1172900DA FR 1172900 A FR1172900 A FR 1172900A
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Rectifiers (AREA)
- Thermistors And Varistors (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US570577A US2930948A (en) | 1956-03-09 | 1956-03-09 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1172900A true FR1172900A (fr) | 1959-02-17 |
Family
ID=24280197
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1172900D Expired FR1172900A (fr) | 1956-03-09 | 1957-03-08 | Dispositif semi-conducteur |
Country Status (3)
Country | Link |
---|---|
US (1) | US2930948A (fr) |
FR (1) | FR1172900A (fr) |
GB (2) | GB855381A (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1160545B (de) * | 1959-08-27 | 1964-01-02 | Philips Nv | Halbleiterelektrodensystem mit einem Halbleiterkoerper und mit wenigstens einer Aluminium enthaltenden Elektrode auf diesem Koerper |
DE1289194B (de) * | 1964-11-13 | 1969-02-13 | Itt Ind Gmbh Deutsche | Halbleiterdiode mit Druckkontakt |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3032695A (en) * | 1957-03-20 | 1962-05-01 | Bosch Gmbh Robert | Alloyed junction semiconductive device |
US3151378A (en) * | 1960-11-01 | 1964-10-06 | Int Rectifier Corp | Process for the manufacture of pure tin alloyed contact for diffused silicon devices |
BE623873A (fr) * | 1961-10-24 | 1900-01-01 | ||
BE627303A (fr) * | 1962-01-19 | 1900-01-01 | ||
FR2150214A1 (fr) * | 1971-08-20 | 1973-04-06 | Thomson Csf |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2197115A (en) * | 1937-01-27 | 1940-04-16 | Gen Motors Corp | Electric thermogauge engine unit |
US2776920A (en) * | 1952-11-05 | 1957-01-08 | Gen Electric | Germanium-zinc alloy semi-conductors |
US2725505A (en) * | 1953-11-30 | 1955-11-29 | Rca Corp | Semiconductor power devices |
US2751528A (en) * | 1954-12-01 | 1956-06-19 | Gen Electric | Rectifier cell mounting |
US2784300A (en) * | 1954-12-29 | 1957-03-05 | Bell Telephone Labor Inc | Method of fabricating an electrical connection |
FR1094755A (fr) * | 1955-01-20 | 1955-05-24 | ||
US2822512A (en) * | 1955-05-17 | 1958-02-04 | Westinghouse Brake & Signal | Rectifier assemblies |
-
1956
- 1956-03-09 US US570577A patent/US2930948A/en not_active Expired - Lifetime
-
1957
- 1957-02-25 GB GB6205/57A patent/GB855381A/en not_active Expired
- 1957-02-25 GB GB1229/60A patent/GB855382A/en not_active Expired
- 1957-03-08 FR FR1172900D patent/FR1172900A/fr not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1160545B (de) * | 1959-08-27 | 1964-01-02 | Philips Nv | Halbleiterelektrodensystem mit einem Halbleiterkoerper und mit wenigstens einer Aluminium enthaltenden Elektrode auf diesem Koerper |
DE1289194B (de) * | 1964-11-13 | 1969-02-13 | Itt Ind Gmbh Deutsche | Halbleiterdiode mit Druckkontakt |
Also Published As
Publication number | Publication date |
---|---|
GB855381A (en) | 1960-11-30 |
GB855382A (en) | 1960-11-30 |
US2930948A (en) | 1960-03-29 |
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