FR1163274A - Dispositif à semi-conducteurs pour le redressement et la limitation de forts courants électriques - Google Patents
Dispositif à semi-conducteurs pour le redressement et la limitation de forts courants électriquesInfo
- Publication number
- FR1163274A FR1163274A FR1163274DA FR1163274A FR 1163274 A FR1163274 A FR 1163274A FR 1163274D A FR1163274D A FR 1163274DA FR 1163274 A FR1163274 A FR 1163274A
- Authority
- FR
- France
- Prior art keywords
- rectifying
- semiconductor device
- electric currents
- strong electric
- limiting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G11/00—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general
- H03G11/002—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general without controlling loop
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C25/00—Surface treatment of fibres or filaments made from glass, minerals or slags
- C03C25/10—Coating
- C03C25/24—Coatings containing organic materials
- C03C25/40—Organo-silicon compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0834—Compounds having one or more O-Si linkage
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/38—Polysiloxanes modified by chemical after-treatment
- C08G77/382—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon
- C08G77/388—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon containing nitrogen
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/12—Regulating voltage or current wherein the variable actually regulated by the final control device is ac
- G05F1/40—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices
- G05F1/44—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices semiconductor devices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/125—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for rectifiers
- H02H7/127—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for rectifiers having auxiliary control electrode to which blocking control voltages or currents are applied in case of emergency
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
- H02H9/025—Current limitation using field effect transistors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/145—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
- H02M7/155—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
- H02M7/19—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only arranged for operation in series, e.g. for voltage multiplication
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/25—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only arranged for operation in series, e.g. for multiplication of voltage
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Radar, Positioning & Navigation (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Automation & Control Theory (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Rectifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2980809X | 1956-12-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1163274A true FR1163274A (fr) | 1958-09-24 |
Family
ID=32395708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1163274D Expired FR1163274A (fr) | 1956-12-12 | 1956-12-12 | Dispositif à semi-conducteurs pour le redressement et la limitation de forts courants électriques |
Country Status (3)
Country | Link |
---|---|
US (1) | US2980809A (fr) |
BE (1) | BE650550A (fr) |
FR (1) | FR1163274A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1156898B (de) * | 1960-08-10 | 1963-11-07 | Siemens Ag | Unipolartransistor mit einem oder mehreren steuerbaren Strompfaden auf einer Halbleiterplatte und Verfahren zu seiner Herstellung |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3102228A (en) * | 1958-05-12 | 1963-08-27 | Acf Ind Inc | Alternating current voltage reference |
US3244867A (en) * | 1960-10-26 | 1966-04-05 | Bendix Corp | Function generator with current limiting means |
US3261984A (en) * | 1961-03-10 | 1966-07-19 | Philco Corp | Tunnel-emission amplifying device and circuit therefor |
US3215859A (en) * | 1962-11-20 | 1965-11-02 | Radiation Inc | Field effect transistor gate |
US3311756A (en) * | 1963-06-24 | 1967-03-28 | Hitachi Seisakusho Tokyoto Kk | Electronic circuit having a fieldeffect transistor therein |
US3593071A (en) * | 1969-04-04 | 1971-07-13 | Ncr Co | Pointed gate semiconductor device |
US4393391A (en) * | 1980-06-16 | 1983-07-12 | Supertex, Inc. | Power MOS transistor with a plurality of longitudinal grooves to increase channel conducting area |
US4903189A (en) * | 1988-04-27 | 1990-02-20 | General Electric Company | Low noise, high frequency synchronous rectifier |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
US2836797A (en) * | 1953-03-23 | 1958-05-27 | Gen Electric | Multi-electrode field controlled germanium devices |
US2891171A (en) * | 1954-09-03 | 1959-06-16 | Cons Electrodynamics Corp | Transistor switch |
US2869000A (en) * | 1954-09-30 | 1959-01-13 | Ibm | Modified binary counter circuit |
US2868455A (en) * | 1954-09-30 | 1959-01-13 | Ibm | Binary counter with fast carry |
US2825822A (en) * | 1955-08-03 | 1958-03-04 | Sylvania Electric Prod | Transistor switching circuits |
US2885572A (en) * | 1955-10-20 | 1959-05-05 | Bell Telephone Labor Inc | Transistor pulse transmission circuits |
-
1956
- 1956-12-12 FR FR1163274D patent/FR1163274A/fr not_active Expired
-
1957
- 1957-12-09 US US701478A patent/US2980809A/en not_active Expired - Lifetime
-
1964
- 1964-07-15 BE BE650550D patent/BE650550A/fr unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1156898B (de) * | 1960-08-10 | 1963-11-07 | Siemens Ag | Unipolartransistor mit einem oder mehreren steuerbaren Strompfaden auf einer Halbleiterplatte und Verfahren zu seiner Herstellung |
Also Published As
Publication number | Publication date |
---|---|
US2980809A (en) | 1961-04-18 |
BE650550A (fr) | 1964-07-31 |
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