FR1152632A - Procédé de purification du silicium - Google Patents

Procédé de purification du silicium

Info

Publication number
FR1152632A
FR1152632A FR1152632DA FR1152632A FR 1152632 A FR1152632 A FR 1152632A FR 1152632D A FR1152632D A FR 1152632DA FR 1152632 A FR1152632 A FR 1152632A
Authority
FR
France
Prior art keywords
purification process
silicon purification
silicon
purification
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1152632A publication Critical patent/FR1152632A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR1152632D 1955-07-22 1956-03-13 Procédé de purification du silicium Expired FR1152632A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US523897A US2901325A (en) 1955-07-22 1955-07-22 Method of preparing silicon

Publications (1)

Publication Number Publication Date
FR1152632A true FR1152632A (fr) 1958-02-21

Family

ID=24086883

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1152632D Expired FR1152632A (fr) 1955-07-22 1956-03-13 Procédé de purification du silicium

Country Status (5)

Country Link
US (1) US2901325A (fr)
BE (1) BE548227A (fr)
CH (1) CH363971A (fr)
FR (1) FR1152632A (fr)
GB (1) GB792166A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0530567A1 (fr) * 1991-08-27 1993-03-10 Bayer Ag Procédé de fabrication de silicium et appareil pour sa mise en oeuvre

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3069241A (en) * 1958-03-21 1962-12-18 Int Standard Electric Corp Manufacture of high purity silicon
NL251304A (fr) * 1959-05-08
NL256017A (fr) * 1959-09-23 1900-01-01
US3090678A (en) * 1960-02-24 1963-05-21 American Metal Prod Method of refining silicon
DE1207341B (de) * 1960-06-11 1965-12-23 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen von Germanium- oder Siliciumstaeben
US3348915A (en) * 1961-11-07 1967-10-24 Norton Co Method for producing a crystalline carbide, boride or silicide
US3251658A (en) * 1963-02-26 1966-05-17 Monsanto Co Zone refining start-up
GB1103329A (en) * 1964-09-15 1968-02-14 Gen Trustee Co Ltd Refining of silicon
FR2430917A1 (fr) * 1978-07-11 1980-02-08 Comp Generale Electricite Procede et dispositif d'elaboration de silicium polycristallin
FR2487808A1 (fr) * 1980-08-01 1982-02-05 Electricite De France Procede et dispositif d'elimination du bore dans le silicium par fusion de zone sous plasma reactif
US4400232A (en) * 1981-11-09 1983-08-23 Eagle-Picher Industries, Inc. Control of oxygen- and carbon-related crystal defects in silicon processing
DE3635064A1 (de) * 1986-10-15 1988-04-21 Bayer Ag Verfahren zur raffination von silicium und derart gereinigtes silicium
JPH0699218B2 (ja) * 1989-04-26 1994-12-07 信越半導体株式会社 単結晶育成用コイル
GB2355850A (en) * 1999-10-26 2001-05-02 Mitel Semiconductor Ab Forming oxide layers in semiconductor layers
US6555407B1 (en) 1999-10-26 2003-04-29 Zarlink Semiconductor Ab Method for the controlled oxidiation of materials
WO2008026931A1 (fr) * 2006-08-30 2008-03-06 Norsk Hydro Asa Procédé et équipement pour la fabrication d'un silicium multicristallin de grade solaire à partir de silicium métallurgique
CN107364870B (zh) * 2017-08-30 2019-11-12 宁晋松宫电子材料有限公司 一种半熔底部籽晶的高效除杂破碎工艺

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
NL63276C (fr) * 1941-04-04
BE510303A (fr) * 1951-11-16

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0530567A1 (fr) * 1991-08-27 1993-03-10 Bayer Ag Procédé de fabrication de silicium et appareil pour sa mise en oeuvre

Also Published As

Publication number Publication date
BE548227A (fr)
US2901325A (en) 1959-08-25
GB792166A (en) 1958-03-19
CH363971A (de) 1962-08-31

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