GB2355850A - Forming oxide layers in semiconductor layers - Google Patents

Forming oxide layers in semiconductor layers Download PDF

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Publication number
GB2355850A
GB2355850A GB9925176A GB9925176A GB2355850A GB 2355850 A GB2355850 A GB 2355850A GB 9925176 A GB9925176 A GB 9925176A GB 9925176 A GB9925176 A GB 9925176A GB 2355850 A GB2355850 A GB 2355850A
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United Kingdom
Prior art keywords
vapour
oxidising
reactor
controlled
carrier gas
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Withdrawn
Application number
GB9925176A
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GB9925176D0 (en
Inventor
Nicolae Chitica
Fredrik Salomonsson
Anita Risberg
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Microsemi Semiconductor AB
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Mitel Semiconductor AB
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Application filed by Mitel Semiconductor AB filed Critical Mitel Semiconductor AB
Priority to GB9925176A priority Critical patent/GB2355850A/en
Publication of GB9925176D0 publication Critical patent/GB9925176D0/en
Priority to US09/693,233 priority patent/US6555407B1/en
Priority to SE0003837A priority patent/SE0003837L/en
Priority to DE10053025A priority patent/DE10053025A1/en
Priority to FR0013722A priority patent/FR2799990A1/en
Priority to CA002324689A priority patent/CA2324689A1/en
Publication of GB2355850A publication Critical patent/GB2355850A/en
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J15/00—Chemical processes in general for reacting gaseous media with non-particulate solids, e.g. sheet material; Apparatus specially adapted therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/006—Processes utilising sub-atmospheric pressure; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H01S5/2215—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides using native oxidation of semiconductor layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

A method of oxidising a layer of a semi conductor device comprises placing the device 14 in a furnace 10 and supplying a carrier gas such as nitrogen containing an oxidising vapour such as water vapour to the furnace. The device may be a VCSEL having an AlGaAs layer which is to be oxidised to form an optical aperture. The partial pressure of the water vapour is controlled by controlling the temperature of a water bath 18.

Description

2355850 METHOD AND APPARATUS FOR THE CONTROLLED OXIDIATION OF MATERIALS
This invention relates to a method and apparatus for the controlled oxidation of materials, such as AI(Ga)As alloys.
In the optoelectronics industry, for example in the manufacture of LEDs and VCSELs (Vertical Cavity Surface Emitting Lasers), there is a need to effect the controlled conversion of AI(Ga)As to AlO,, in order to fabricate current or optical apertures. The oxidation process for converting AI(Ga)As to AlO,, is dependent on the kinetics of the oxidation reaction, supply of reactant (oxygen containing species) and removal of the by- lo products of the conversion reaction (e.g As). Unfortunately, this makes the Al(Ga) As-: >AIO,, conversion process very sensitive to factors such as temperature of the sample, composition of the AI(Ga)As material, the thickness of the layer, surface treatment prior to oxidation, amount of moisture in the reactive atmosphere of the furnace, exposure to air prior to the oxidation process, and opening/closing mode of the furnace when the sample is loaded. While some of these factors, such as temperature, can be relatively easily, others are very difficult if not impossible to control accurately enough (e.g. exposure to air, loading mode) and are generally considered "noise factors"'. The many investigations on various AI(Ga)As oxidation processes that have been carried out by different researchers indicate a large variability in the process, suggesting a large contribution by the noise factors. This makes it difficult to control the conversion process with sufficient precision, resulting in a degradation of the device performance and an inability to produce higher speed devices.
An object of the invention is to alleviate this disadvantage.
According to the present invention there is provided a method of carrying out the z5 controlled oxidation of an oxidisable material, comprising the steps of placing the oxidisable material into a reactor, and causing a carrier gas to flow over said oxidisable material, said carrier gas containing an oxidising vapour at a controlled partial pressure.
The oxidising vapour is typically water vapour and the carrier gas, and inert gas, typically nitrogen, in which case the partial pressure of the water vapour can be controlled by controlling the temperature of a water bath, in turn to accurately control the oxidation process.
The oxidation process is typically carried out in a reactor tube at temperatures in the range of 400-500C and pressures in the range of 50100 mbar. These ranges are typical and not limiting. Precise control of the oxidation rate and of the final oxide thickness is achieved by controlling the partial pressure of the water vapor in the furnace tube.
The invention can be applied, for example, to the oxidation of AI(Ga)As in the manufacture of high speed VCSELs.
The process in accordance with the invention reduces the noise factors present when AI(Ga)As is converted A10,, The oxidation process is designed so that rate depends mainly on one control factor, namely the partial pressure of the oxidising vapour or the time of exposure.
The time of exposure can be controlled in practice by removing the sample from the oven orjust turning off the water vapour.
Using the method of the invention, it has surprisingly been found that the reaction parameters can be chosen so that the oxidation process is tolerant to variations in temperature and total pressure in the furnace, to variations in the composition and thickness of the Al-containing layers or to the preparation of the samples.
While primarily intended for Al-containing layers, such as AI(Ga) As, the invention can be applied to other materials that need to be oxidised in a highly controlled manner.
Typically, the reaction is carried out at a low pressure, for example, 50100mbar at temperatures in the range 400-500'C. These parameters are purely exemplary and not limiting. Persons skilled in the art can determine the optimum parameters for any particular application by routing experiment.
Gil The invention also provides an apparatus for carrying out the controlled oxidation of an oxidisable material, comprising a reactor for containing the oxidisable material, a supply of carrier gas for flowing over said oxidisable material, and a supply of oxidising vapour, and a mixing device for mixing said oxidising vapour with carrier gas at a controlled partial pressure.
The apparatus and process parameters presented here provide for the precisely controlled oxidation of layered semiconductor structures including at least one layer of Al containing alloy. As a particular case, an isotropic oxidation rate can achieved for an AlAs alloy without addition of Ga.
The invention will now be described in more detail, by way of example only, with reference to the accompanying drawings, in which:- Figure 1 shows an apparatus for carrying out the invention; io Figure 2 shows the reproducibility of the oxidation depth for various samples oxidised in accordance with the principles of the invention over a span of three months; Figure 3 shows the uniformity of oxidation depth for mesas with various diameters and at different locations over the chip; Figure 4 shows typical aspects of the oxide aperture; and Figure 5a shows the dependence of oxidation depth on time for various furnace temperatures, and Figure 5b shows the dependence of the oxidation depth on partial pressure of water vapors for a temperature of the furnace of 400'C and a time of 30 minutes.
An apparatus for carrying out the novel method is shown in Figure 1. A furnace 10 with reactor tube 12 contains a sample to be oxidised, for example, a VCSEL precursor having an AI(Ga)As layer, which needs to be oxidised to form an optical aperture.
The furnace 10 heats the reactor tube to a temperature of 430T and pump 16 evacuates it to a pressure of 40mbar.
A water bath 18 is heated to a temperature of 20C by thermostatically controlled beater 20 to produce a controlled supply of water vapour. A source 22 supplies nitrogen at two atmospheres to supply line 24 where it is mixed with water vapour flowing along line 26 from the water bath 18. Valves 28 and 30 enable the flow rate of the water vapour and combined gases to be controlled. In this example, the flow rate is 50sccm.
The partial pressure of the water vapor is controlled by controlling the temperature of the water bath 18. The temperature of the reservoir is typically set in the range of 0-20'C, but it is not limited to this.
The design of the apparatus ensures that the partial pressure of the water vapor in the furnace is accurately maintained at the desired value and that it can be changed in a short time from zero to the desired working value ("on") and also from this value to a much lower, near-zero value ("off").
The oxidation time is accurately set by switching "on" and "off' the water vapor as the oxidation rate is negligible in the "off' state. The parameters are chosen such that the io oxidation process is tolerant to variations in temperature and total pressure in the furnace, to variations in the composition and thickness of the Al- containing layers or to the preparation of the samples. Good reproducibility of the oxide thickness has been achieved with various samples over a time span of several months.
It will thus be seen in accordance with the principles of the invention that the reaction rate is directly controlled by the partial pressure of the water vapor fed into the reactor (furnace tube). The partial pressure of the water vapor is accurately set and maintained through the temperature of a water bath. This control is facilitated by having the reservoir in a thermostat bath at a near ambient temperature.
The design and construction of the water bath and of the lines feeding the gas mixture to the reactor provide for the accuracy of the control over the partial pressure of the water vapors in the reactor. The design relies on a fundamental physical law that states that at equilibrium the partial pressure of the water vapor is uniquely defined by the temperature of the vapor/liquid system to control the process.
The apparatus provides a means for effectively switching on and off the water vapor.
When switched "on", the partial pressure of the vapor in the furnace tube will settle in a short time to the desired working value. When switched to "off' the partial pressure will be reduced to a near-zero value and only carrier gas only will flow through the furnace tube. This provides the way to define the oxidation time.
By conducting the reaction at a low pressure (50- 100 mbar range), good control can be ensures over residual gases enabling effective contaminant control.
The apparatus also has the advantage of low gas flows and easy-to-handle exhausts.
Figure 2 shows a series of samples taken over a period of three months. The square points are for a resist mask and the round points are for a silicon nitride mask. It will be seen that between December 1998 and March 1999, it was possible to maintain the oxidation depth 5 between 18 and 20 gm.
Figure 3 illustrates the uniformity of oxidation depth for mesas with various diameters and different locations over the chip. This represents a significant improvement.
Figure 4 illustrates how both circular and rectangular windows can be formed with the invention. The circular shape results from an isotropic rate wherein the oxidation front io copies the shape of the mesa, and the rectangular shape results from an anisotropic oxidation rate. The conditions for the various samples shown in Figure 4 were: 440T at a partial pressure of 22mbar for 8 mins., 400C at a partial pressure of 8mbar for 30 mins., 440C at a partial pressure of 22 mbar for 15 mins., and 480'C at a partial pressure of 22 mbar for 15 mins.
Figures 5a shows the dependence of oxidation depth on time for various furnace temperatures. Figure 5b shows the dependence of the oxidation depth on the partial pressure of water vapour for a furnace temperature of 400T and an exposure time of 30 mins.
In all cases, the oxidation depth is determined almost solely by the partial pressure of the water vapour and the exposure time. Unlike the prior art, in accordance with the principles of the invention the variables can be selected so that the noise parameters have very little impact on the oxidation process.
In summary, the process according to the principles of the invention offers easily controllable process parameters and oxidation time, very good reproducibility and stability, good uniformity, an isotropic rate without using ternary alloys, and is tolerant to sample preparation.
Although water vapour has been described as the oxidising vapour, the invention could also work with other oxidising vapours.

Claims (18)

Claims:
1. A method of carrying out the controlled oxidation of an oxidisable material, comprising the steps of placing the oxidisable material in a reactor, and causing a carrier gas to flow over said oxidisable material, said carrier gas containing an oxidising vapour at a controlled partial pressure.
2. A method as claimed in claim 1, wherein the flow of said oxidising vapour is cut off after a predetermined time while maintaining flow of said carrier gas.
3. A method as claimed in claim 1 or 2, wherein said carrier gas is nitrogen.
4. A method as claimed in any one of claims I to 3, wherein said oxidising vapour is water.
5. A method as claimed in any one of claims 1 to 4, wherein said oxidising vapour is generated in a thermostatically controlled bath.
6. A method as claimed in claim 5, wherein the temperature of said bath is controlled to control the partial pressure of said oxidising vapour and thus the oxidation process.
7. A method as claimed in any one of claims I to 5, wherein said reactor is provided inside a furnace maintained a target temperature.
8. A method as claimed in claim 7, wherein said target temperature is about 400 5000C.
9. A method as claimed in any one of claims 1 to 8, wherein said reactor is maintained at a pressure of about 50-100mbar.
10. A method as claimed in any one of claims I to 9, wherein said material is an Alcontaining layer.
11. A method as claimed in claim 10, wherein said material is AI(Ga)As.
12. A method as claimed in any one of claims I to 10 used in the manufacture of a 25 VCSEL or LED.
13. An apparatus for carrying out the controlled oxidation of an oxidisable material, comprising a reactor for containing the oxidisable material, a supply of carrier gas for flowing over said oxidisable material, and a supply of oxidising vapour, and a mixing device for mixing said oxidising vapour with carrier gas at a controlled partial pressure.
14. An apparatus as claimed in claim 13, comprising a thermostatically controlled bath for providing said oxidising vapour.
15. An apparatus as claimed in claim 13, wherein said thermostatically controlled bath is a water bath.
16. An apparatus as claimed in any one of claims 13 to 15, wherein said reactor is mounted in a furnace for maintaining said reactor at a high temperature.
17. An apparatus as claimed in any one of claims 13 to 16, further comprising a io vacuum pump for maintaining a low pressure in said reactor.
18. An apparatus as claimed in any one of claims 13 to 17, further comprising mixing valves for controlling the relative flow rates of the oxidising vapour and the carrier gas.
GB9925176A 1999-10-26 1999-10-26 Forming oxide layers in semiconductor layers Withdrawn GB2355850A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB9925176A GB2355850A (en) 1999-10-26 1999-10-26 Forming oxide layers in semiconductor layers
US09/693,233 US6555407B1 (en) 1999-10-26 2000-10-20 Method for the controlled oxidiation of materials
SE0003837A SE0003837L (en) 1999-10-26 2000-10-24 Method and apparatus for controlled oxidation of materials
DE10053025A DE10053025A1 (en) 1999-10-26 2000-10-26 Method and device for the controlled oxidation of materials
FR0013722A FR2799990A1 (en) 1999-10-26 2000-10-26 Controlled oxidation of oxidizable material for manufacturing vertical cavity surface emitting lasers, involves flowing carrier gas containing oxidizing vapor at controlled partial pressure over oxidizable material
CA002324689A CA2324689A1 (en) 1999-10-26 2000-10-26 Method and apparatus for the controlled oxidation of materials

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Application Number Priority Date Filing Date Title
GB9925176A GB2355850A (en) 1999-10-26 1999-10-26 Forming oxide layers in semiconductor layers

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GB9925176D0 GB9925176D0 (en) 1999-12-22
GB2355850A true GB2355850A (en) 2001-05-02

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CA (1) CA2324689A1 (en)
DE (1) DE10053025A1 (en)
FR (1) FR2799990A1 (en)
GB (1) GB2355850A (en)
SE (1) SE0003837L (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10234694A1 (en) * 2002-07-30 2004-02-12 Infineon Technologies Ag Oxidizing a layer comprises inserting the substrate carrying a layer stack into a heating unit, feeding an oxidation gas onto the substrate, heating to a process temperature, and regulating or controlling the temperature

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10140791A1 (en) * 2001-08-20 2003-03-13 Mattson Thermal Products Gmbh Process for the thermal treatment of a multi-layer substrate
CN114783870B (en) * 2022-06-22 2022-09-20 度亘激光技术（苏州）有限公司 Method for manufacturing semiconductor structure

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB809644A (en) * 1955-12-02 1959-02-25 Western Electric Co Improvements in or relating to the manufacture of semi-conductor bodies
US4505028A (en) * 1983-01-19 1985-03-19 Hitachi, Ltd. Method of producing semiconductor device
GB2295271A (en) * 1994-11-15 1996-05-22 Korea Electronics Telecomm Fabricating a compound semiconductor thin film on dielectric thin film
WO1999003141A1 (en) * 1997-07-11 1999-01-21 Applied Materials, Inc. Method and apparatus for in situ vapor generation
US5959329A (en) * 1995-03-18 1999-09-28 Kabushiki Kaisha Toshiba Insulating oxide film formed by high-temperature wet oxidation

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE548227A (en) * 1955-07-22
US3939293A (en) * 1974-04-30 1976-02-17 International Business Machines, Corporation Method for passivating chromium
CA1244969A (en) * 1986-10-29 1988-11-15 Mitel Corporation Method for diffusing p-type material using boron disks
JPH01155686A (en) * 1987-12-11 1989-06-19 Hitachi Metals Ltd Multilayer substrate of aluminum nitride and manufacture thereof
JP3277043B2 (en) * 1993-09-22 2002-04-22 株式会社東芝 Method for manufacturing semiconductor device
JPH0831813A (en) * 1994-07-15 1996-02-02 Kawasaki Steel Corp Formation of oxide film and production of semiconductor therewith
US5633527A (en) * 1995-02-06 1997-05-27 Sandia Corporation Unitary lens semiconductor device
US5568499A (en) * 1995-04-07 1996-10-22 Sandia Corporation Optical device with low electrical and thermal resistance bragg reflectors
US5978408A (en) * 1997-02-07 1999-11-02 Xerox Corporation Highly compact vertical cavity surface emitting lasers
JP2000114253A (en) * 1998-09-30 2000-04-21 Toshiba Corp Semiconductor oxide film formation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB809644A (en) * 1955-12-02 1959-02-25 Western Electric Co Improvements in or relating to the manufacture of semi-conductor bodies
US4505028A (en) * 1983-01-19 1985-03-19 Hitachi, Ltd. Method of producing semiconductor device
GB2295271A (en) * 1994-11-15 1996-05-22 Korea Electronics Telecomm Fabricating a compound semiconductor thin film on dielectric thin film
US5959329A (en) * 1995-03-18 1999-09-28 Kabushiki Kaisha Toshiba Insulating oxide film formed by high-temperature wet oxidation
WO1999003141A1 (en) * 1997-07-11 1999-01-21 Applied Materials, Inc. Method and apparatus for in situ vapor generation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10234694A1 (en) * 2002-07-30 2004-02-12 Infineon Technologies Ag Oxidizing a layer comprises inserting the substrate carrying a layer stack into a heating unit, feeding an oxidation gas onto the substrate, heating to a process temperature, and regulating or controlling the temperature
US7615499B2 (en) 2002-07-30 2009-11-10 Infineon Technologies Ag Method for oxidizing a layer, and associated holding devices for a substrate

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SE0003837D0 (en) 2000-10-24
CA2324689A1 (en) 2001-04-26
FR2799990A1 (en) 2001-04-27

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