FI20140362A - Fotoniavusteinen pinnan pinnoitusmenetelmä - Google Patents

Fotoniavusteinen pinnan pinnoitusmenetelmä

Info

Publication number
FI20140362A
FI20140362A FI20140362A FI20140362A FI20140362A FI 20140362 A FI20140362 A FI 20140362A FI 20140362 A FI20140362 A FI 20140362A FI 20140362 A FI20140362 A FI 20140362A FI 20140362 A FI20140362 A FI 20140362A
Authority
FI
Finland
Prior art keywords
photo
coating process
assisted coating
assisted
coating
Prior art date
Application number
FI20140362A
Other languages
English (en)
Swedish (sv)
Other versions
FI126794B (fi
Inventor
Timo Malinen
Original Assignee
Picosun Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FI20140362A priority Critical patent/FI126794B/fi
Application filed by Picosun Oy filed Critical Picosun Oy
Priority to KR1020177016666A priority patent/KR102546076B1/ko
Priority to CN202210175783.1A priority patent/CN114561631A/zh
Priority to PCT/FI2015/050820 priority patent/WO2016102749A1/en
Priority to SG11201703666QA priority patent/SG11201703666QA/en
Priority to CN201580069843.XA priority patent/CN107109646B/zh
Priority to US15/536,853 priority patent/US10597778B2/en
Priority to RU2017124606A priority patent/RU2704875C2/ru
Priority to JP2017531469A priority patent/JP6639506B2/ja
Priority to EP15872019.3A priority patent/EP3237651B1/en
Priority to TW104140940A priority patent/TWI676705B/zh
Publication of FI20140362A publication Critical patent/FI20140362A/fi
Application granted granted Critical
Publication of FI126794B publication Critical patent/FI126794B/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
FI20140362A 2014-12-22 2014-12-22 Fotoniavusteinen pinnan pinnoitusmenetelmä FI126794B (fi)

Priority Applications (11)

Application Number Priority Date Filing Date Title
FI20140362A FI126794B (fi) 2014-12-22 2014-12-22 Fotoniavusteinen pinnan pinnoitusmenetelmä
CN202210175783.1A CN114561631A (zh) 2014-12-22 2015-11-25 Ald方法和包括光子源的设备
PCT/FI2015/050820 WO2016102749A1 (en) 2014-12-22 2015-11-25 Ald method and apparatus including a photon source
SG11201703666QA SG11201703666QA (en) 2014-12-22 2015-11-25 Ald method and apparatus including a photon source
KR1020177016666A KR102546076B1 (ko) 2014-12-22 2015-11-25 광자 소스를 포함하는 ald 방법 및 장치
CN201580069843.XA CN107109646B (zh) 2014-12-22 2015-11-25 Ald方法和包括光子源的设备
US15/536,853 US10597778B2 (en) 2014-12-22 2015-11-25 ALD method and apparatus including a photon source
RU2017124606A RU2704875C2 (ru) 2014-12-22 2015-11-25 Устройство и способ атомно-слоевого осаждения покрытия на поверхность подложки
JP2017531469A JP6639506B2 (ja) 2014-12-22 2015-11-25 Ａｌｄ方法および光子源を備えるａｌｄ装置
EP15872019.3A EP3237651B1 (en) 2014-12-22 2015-11-25 Ald method and apparatus including a photon source
TW104140940A TWI676705B (zh) 2014-12-22 2015-12-07 沉積技術（二）

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20140362A FI126794B (fi) 2014-12-22 2014-12-22 Fotoniavusteinen pinnan pinnoitusmenetelmä

Publications (2)

Publication Number Publication Date
FI20140362A true FI20140362A (fi) 2016-06-23
FI126794B FI126794B (fi) 2017-05-31

Family

ID=56149318

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20140362A FI126794B (fi) 2014-12-22 2014-12-22 Fotoniavusteinen pinnan pinnoitusmenetelmä

Country Status (10)

Country Link
US (1) US10597778B2 (fi)
EP (1) EP3237651B1 (fi)
JP (1) JP6639506B2 (fi)
KR (1) KR102546076B1 (fi)
CN (2) CN107109646B (fi)
FI (1) FI126794B (fi)
RU (1) RU2704875C2 (fi)
SG (1) SG11201703666QA (fi)
TW (1) TWI676705B (fi)
WO (1) WO2016102749A1 (fi)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109457234A (zh) * 2018-10-29 2019-03-12 吉林大学 一种高能光子辅助的原子层沉积方法
FI129557B (fi) * 2019-11-28 2022-04-29 Picosun Oy Substraatin prosessointilaitteisto ja -menetelmä

Family Cites Families (24)

* Cited by examiner, † Cited by third party
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JPS5992523A (ja) * 1982-11-18 1984-05-28 Nec Corp 結晶成長法
JPS6357771A (ja) 1986-08-26 1988-03-12 Matsushita Electric Ind Co Ltd 炭化硅素膜の製法
JPS6411320A (en) * 1987-07-06 1989-01-13 Toshiba Corp Photo-cvd device
DE3926023A1 (de) 1988-09-06 1990-03-15 Schott Glaswerke Cvd-beschichtungsverfahren zur herstellung von schichten und vorrichtung zur durchfuehrung des verfahrens
JP3244809B2 (ja) * 1992-09-30 2002-01-07 株式会社東芝 薄膜形成方法及び薄膜形成装置
US5728224A (en) * 1995-09-13 1998-03-17 Tetra Laval Holdings & Finance S.A. Apparatus and method for manufacturing a packaging material using gaseous phase atmospheric photo chemical vapor deposition to apply a barrier layer to a moving web substrate
TWI251506B (en) * 2000-11-01 2006-03-21 Shinetsu Eng Co Ltd Excimer UV photo reactor
US7160577B2 (en) * 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US20040018750A1 (en) * 2002-07-02 2004-01-29 Sophie Auguste J.L. Method for deposition of nitrogen doped silicon carbide films
US7351656B2 (en) 2005-01-21 2008-04-01 Kabushiki Kaihsa Toshiba Semiconductor device having oxidized metal film and manufacture method of the same
US7727912B2 (en) * 2006-03-20 2010-06-01 Tokyo Electron Limited Method of light enhanced atomic layer deposition
US20070259111A1 (en) * 2006-05-05 2007-11-08 Singh Kaushal K Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
DE102009026249B4 (de) 2009-07-24 2012-11-15 Q-Cells Se Plasma unterstütztes Abscheideverfahren, Halbleitervorrichtung und Abscheidevorrichtung
RU2436727C2 (ru) * 2010-01-29 2011-12-20 Государственное образовательное учреждение высшего профессионального образования "Воронежский государственный университет" Способ получения нанокристаллических пленок рутила
TWI563582B (en) 2010-06-03 2016-12-21 Novellus Systems Inc Method of improving film non-uniformity and throughput
BE1019439A3 (fr) 2010-07-30 2012-07-03 Diarotech Procede pour synthetiser par depot chimique en phase vapeur une matiere solide, en particulier du diamant, ainsi qu'un dispositif pour l'application du procede.
US20120046480A1 (en) * 2010-08-20 2012-02-23 Cheng-Jye Chu Dense cu based thin film and the manufacturing process thereof
JP2012126977A (ja) * 2010-12-16 2012-07-05 Ulvac Japan Ltd 真空成膜装置及び成膜方法
EP2592173A3 (de) * 2011-11-08 2014-03-05 FHR Anlagenbau GmbH Anordnung und Verfahren zur Durchführung eines Niedertemperatur - ALD-Prozesses
JP5746960B2 (ja) 2011-12-15 2015-07-08 豊田鉄工株式会社 赤外線加熱装置
CN102492939A (zh) 2011-12-29 2012-06-13 中国科学院半导体研究所 集成傅里叶变换红外原位监测***的原子层沉积装置
JP5842750B2 (ja) 2012-06-29 2016-01-13 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
DE102012221080A1 (de) 2012-11-19 2014-03-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Schicht auf einem Oberflächenbereich eines elektronischen Bauelements

Also Published As

Publication number Publication date
JP2018502219A (ja) 2018-01-25
WO2016102749A1 (en) 2016-06-30
RU2017124606A3 (fi) 2019-05-08
CN114561631A (zh) 2022-05-31
RU2017124606A (ru) 2019-01-24
RU2704875C2 (ru) 2019-10-31
KR20170095875A (ko) 2017-08-23
US10597778B2 (en) 2020-03-24
SG11201703666QA (en) 2017-06-29
CN107109646B (zh) 2022-03-18
FI126794B (fi) 2017-05-31
US20170342563A1 (en) 2017-11-30
JP6639506B2 (ja) 2020-02-05
EP3237651B1 (en) 2024-04-03
KR102546076B1 (ko) 2023-06-22
CN107109646A (zh) 2017-08-29
EP3237651A1 (en) 2017-11-01
TWI676705B (zh) 2019-11-11
TW201629263A (zh) 2016-08-16
EP3237651A4 (en) 2018-01-17

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