FI20115982A - Detektorkonstruktion för avbildningstillämpningar och tillverkningsförfarande i samband med denna - Google Patents

Detektorkonstruktion för avbildningstillämpningar och tillverkningsförfarande i samband med denna Download PDF

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Publication number
FI20115982A
FI20115982A FI20115982A FI20115982A FI20115982A FI 20115982 A FI20115982 A FI 20115982A FI 20115982 A FI20115982 A FI 20115982A FI 20115982 A FI20115982 A FI 20115982A FI 20115982 A FI20115982 A FI 20115982A
Authority
FI
Finland
Prior art keywords
manufacturing process
associated therewith
process associated
imaging applications
detector design
Prior art date
Application number
FI20115982A
Other languages
English (en)
Finnish (fi)
Other versions
FI20115982A0 (sv
FI124818B (sv
Inventor
Juha Kalliopuska
Jan Jakubek
Original Assignee
Teknologian Tutkimuskeskus Vtt Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teknologian Tutkimuskeskus Vtt Oy filed Critical Teknologian Tutkimuskeskus Vtt Oy
Priority to FI20115982A priority Critical patent/FI124818B/sv
Publication of FI20115982A0 publication Critical patent/FI20115982A0/sv
Priority to PCT/EP2012/068113 priority patent/WO2013050229A1/en
Priority to EP12772889.7A priority patent/EP2764552B1/en
Priority to US14/350,137 priority patent/US8928155B2/en
Publication of FI20115982A publication Critical patent/FI20115982A/sv
Application granted granted Critical
Publication of FI124818B publication Critical patent/FI124818B/sv

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14661—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14669—Infrared imagers
    • H01L27/1467—Infrared imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/901—Assemblies of multiple devices comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FI20115982A 2011-10-06 2011-10-06 Hybridpixeldetektorkonstruktion och ett förfarande för att dess tillverkning FI124818B (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FI20115982A FI124818B (sv) 2011-10-06 2011-10-06 Hybridpixeldetektorkonstruktion och ett förfarande för att dess tillverkning
PCT/EP2012/068113 WO2013050229A1 (en) 2011-10-06 2012-09-14 Detector structure for imaging applications and related method of manufacture
EP12772889.7A EP2764552B1 (en) 2011-10-06 2012-09-14 Detector structure for imaging applications and related method of manufacture
US14/350,137 US8928155B2 (en) 2011-10-06 2012-09-14 Detector structure for imaging applications and related method of manufacture

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20115982A FI124818B (sv) 2011-10-06 2011-10-06 Hybridpixeldetektorkonstruktion och ett förfarande för att dess tillverkning
FI20115982 2011-10-06

Publications (3)

Publication Number Publication Date
FI20115982A0 FI20115982A0 (sv) 2011-10-06
FI20115982A true FI20115982A (sv) 2013-04-07
FI124818B FI124818B (sv) 2015-02-13

Family

ID=44883650

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20115982A FI124818B (sv) 2011-10-06 2011-10-06 Hybridpixeldetektorkonstruktion och ett förfarande för att dess tillverkning

Country Status (4)

Country Link
US (1) US8928155B2 (sv)
EP (1) EP2764552B1 (sv)
FI (1) FI124818B (sv)
WO (1) WO2013050229A1 (sv)

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US20140312450A1 (en) * 2013-04-23 2014-10-23 Sensors Unlimited, Inc. Small Size, Weight, and Packaging of Image Sensors
CZ2013669A3 (cs) * 2013-08-30 2015-01-07 České vysoké učení technické v Praze Ústav technické a experimentální fyziky Detektor ionizujícího záření umožňující vytvoření souvislého digitálního obrazu
CN106659451B (zh) * 2014-06-10 2020-10-09 皇家飞利浦有限公司 模块化成像检测器asic
US9689997B2 (en) * 2014-09-04 2017-06-27 General Electric Company Systems and methods for modular imaging detectors
DE102014225396B3 (de) * 2014-12-10 2016-04-28 Siemens Aktiengesellschaft Sensorboard für ein Detektormodul und Verfahren zu dessen Herstellung
US10075657B2 (en) 2015-07-21 2018-09-11 Fermi Research Alliance, Llc Edgeless large area camera system
US10352991B2 (en) 2015-07-21 2019-07-16 Fermi Research Alliance, Llc Edgeless large area ASIC
CN107923987B (zh) * 2015-09-08 2020-05-15 深圳帧观德芯科技有限公司 用于制作x射线检测器的方法
WO2017059573A1 (en) 2015-10-09 2017-04-13 Shenzhen Xpectvision Technology Co., Ltd. Packaging methods of semiconductor x-ray detectors
US10283557B2 (en) * 2015-12-31 2019-05-07 General Electric Company Radiation detector assembly
US10686003B2 (en) 2015-12-31 2020-06-16 General Electric Company Radiation detector assembly
JP6842528B2 (ja) 2016-07-14 2021-03-17 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 検出器モジュール、検出器、イメージング装置及び検出器モジュールの製造方法
EP3743742A4 (en) * 2018-01-24 2021-07-28 Shenzhen Xpectvision Technology Co., Ltd. PACKAGING RADIATION DETECTORS IN AN IMAGE SENSOR
US10658262B2 (en) * 2018-02-27 2020-05-19 Ball Aerospace & Technologies Corp. Pin flexure array
US11094605B2 (en) 2018-02-27 2021-08-17 Ball Aerospace & Technologies Corp. Systems and methods for supporting a component
DE102019202442A1 (de) * 2019-02-22 2020-08-27 Bruker Axs Gmbh Messanordnung für Röntgenstrahlung für eine spaltfreie 1D-Messung
CN111613679B (zh) * 2020-06-01 2022-03-29 清华大学 一种电子成像探测器及其制备方法和电子显微成像***
EP4220235A1 (en) * 2022-01-31 2023-08-02 Redlen Technologies, Inc. Radiation detector unit with three-side buttable read-out integrated circuit
KR20240081089A (ko) 2022-11-30 2024-06-07 주식회사 비투지홀딩스 방사선 디텍터

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GB2315157B (en) 1996-07-11 1998-09-30 Simage Oy Imaging apparatus
AU4603200A (en) 1999-04-26 2000-11-10 Simage Oy Device for imaging radiation
US7189971B2 (en) * 2002-02-15 2007-03-13 Oy Ajat Ltd Radiation imaging device and system
US7117588B2 (en) 2002-04-23 2006-10-10 Ge Medical Systems Global Technology Company, Llc Method for assembling tiled detectors for ionizing radiation based image detection
US6909100B2 (en) * 2002-07-25 2005-06-21 Ii-Vi Incorporated Radiation detector assembly
EP2587552A1 (en) * 2004-03-12 2013-05-01 Kyosemi Corporation Laminated solar battery
WO2008003351A1 (en) 2006-07-04 2008-01-10 Mario Caria Imaging system with tiled sensor chips having partially overlapping active areas
US8835748B2 (en) * 2009-01-06 2014-09-16 Sunlight Photonics Inc. Multi-junction PV module
JP5518045B2 (ja) * 2009-03-18 2014-06-11 三菱電機株式会社 光電変換装置およびその製造方法
US8117741B2 (en) 2009-04-07 2012-02-21 Oy Ajat Ltd Method for manufacturing a radiation imaging panel comprising imaging tiles
WO2011156887A1 (en) * 2010-06-17 2011-12-22 Mosaid Technologies Incorporated Semiconductor device with through-silicon vias
US8866281B2 (en) * 2012-07-19 2014-10-21 Nanya Technology Corporation Three-dimensional integrated circuits and fabrication thereof

Also Published As

Publication number Publication date
WO2013050229A1 (en) 2013-04-11
FI20115982A0 (sv) 2011-10-06
US8928155B2 (en) 2015-01-06
US20140284752A1 (en) 2014-09-25
FI124818B (sv) 2015-02-13
EP2764552A1 (en) 2014-08-13
EP2764552B1 (en) 2019-11-13

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