FI20115982A - Detektorirakenne kuvantamissovelluksiin ja tähän liittyvä valmistusmenetelmä - Google Patents
Detektorirakenne kuvantamissovelluksiin ja tähän liittyvä valmistusmenetelmä Download PDFInfo
- Publication number
- FI20115982A FI20115982A FI20115982A FI20115982A FI20115982A FI 20115982 A FI20115982 A FI 20115982A FI 20115982 A FI20115982 A FI 20115982A FI 20115982 A FI20115982 A FI 20115982A FI 20115982 A FI20115982 A FI 20115982A
- Authority
- FI
- Finland
- Prior art keywords
- manufacturing process
- associated therewith
- process associated
- imaging applications
- detector design
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14661—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
- H01L27/1467—Infrared imagers of the hybrid type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/901—Assemblies of multiple devices comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20115982A FI124818B (fi) | 2011-10-06 | 2011-10-06 | Hybridipikseli-ilmaisinrakenne ja tämän valmistusmenetelmä |
US14/350,137 US8928155B2 (en) | 2011-10-06 | 2012-09-14 | Detector structure for imaging applications and related method of manufacture |
EP12772889.7A EP2764552B1 (en) | 2011-10-06 | 2012-09-14 | Detector structure for imaging applications and related method of manufacture |
PCT/EP2012/068113 WO2013050229A1 (en) | 2011-10-06 | 2012-09-14 | Detector structure for imaging applications and related method of manufacture |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20115982 | 2011-10-06 | ||
FI20115982A FI124818B (fi) | 2011-10-06 | 2011-10-06 | Hybridipikseli-ilmaisinrakenne ja tämän valmistusmenetelmä |
Publications (3)
Publication Number | Publication Date |
---|---|
FI20115982A0 FI20115982A0 (fi) | 2011-10-06 |
FI20115982A true FI20115982A (fi) | 2013-04-07 |
FI124818B FI124818B (fi) | 2015-02-13 |
Family
ID=44883650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20115982A FI124818B (fi) | 2011-10-06 | 2011-10-06 | Hybridipikseli-ilmaisinrakenne ja tämän valmistusmenetelmä |
Country Status (4)
Country | Link |
---|---|
US (1) | US8928155B2 (fi) |
EP (1) | EP2764552B1 (fi) |
FI (1) | FI124818B (fi) |
WO (1) | WO2013050229A1 (fi) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140312450A1 (en) * | 2013-04-23 | 2014-10-23 | Sensors Unlimited, Inc. | Small Size, Weight, and Packaging of Image Sensors |
CZ304899B6 (cs) | 2013-08-30 | 2015-01-07 | České vysoké učení technické v Praze Ústav technické a experimentální fyziky | Detektor ionizujícího záření umožňující vytvoření souvislého digitálního obrazu |
EP3155663B1 (en) * | 2014-06-10 | 2018-05-16 | Koninklijke Philips N.V. | Modular imaging detector asic |
US9689997B2 (en) * | 2014-09-04 | 2017-06-27 | General Electric Company | Systems and methods for modular imaging detectors |
DE102014225396B3 (de) * | 2014-12-10 | 2016-04-28 | Siemens Aktiengesellschaft | Sensorboard für ein Detektormodul und Verfahren zu dessen Herstellung |
US10075657B2 (en) | 2015-07-21 | 2018-09-11 | Fermi Research Alliance, Llc | Edgeless large area camera system |
US10352991B2 (en) | 2015-07-21 | 2019-07-16 | Fermi Research Alliance, Llc | Edgeless large area ASIC |
CN107923987B (zh) * | 2015-09-08 | 2020-05-15 | 深圳帧观德芯科技有限公司 | 用于制作x射线检测器的方法 |
CN108027448B (zh) | 2015-10-09 | 2022-02-11 | 深圳帧观德芯科技有限公司 | 半导体x射线检测器的封装方法 |
US10686003B2 (en) * | 2015-12-31 | 2020-06-16 | General Electric Company | Radiation detector assembly |
US10283557B2 (en) * | 2015-12-31 | 2019-05-07 | General Electric Company | Radiation detector assembly |
US10868074B2 (en) | 2016-07-14 | 2020-12-15 | Koninklijke Philips N.V. | Detector module, detector, imaging apparatus and method of manufacturing a detector module |
EP3743742A4 (en) * | 2018-01-24 | 2021-07-28 | Shenzhen Xpectvision Technology Co., Ltd. | PACKAGING RADIATION DETECTORS IN AN IMAGE SENSOR |
US11094605B2 (en) | 2018-02-27 | 2021-08-17 | Ball Aerospace & Technologies Corp. | Systems and methods for supporting a component |
US10658262B2 (en) * | 2018-02-27 | 2020-05-19 | Ball Aerospace & Technologies Corp. | Pin flexure array |
CN111613679B (zh) * | 2020-06-01 | 2022-03-29 | 清华大学 | 一种电子成像探测器及其制备方法和电子显微成像*** |
EP4220235A1 (en) * | 2022-01-31 | 2023-08-02 | Redlen Technologies, Inc. | Radiation detector unit with three-side buttable read-out integrated circuit |
KR20240081089A (ko) | 2022-11-30 | 2024-06-07 | 주식회사 비투지홀딩스 | 방사선 디텍터 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2315157B (en) | 1996-07-11 | 1998-09-30 | Simage Oy | Imaging apparatus |
AU4603200A (en) | 1999-04-26 | 2000-11-10 | Simage Oy | Device for imaging radiation |
US7189971B2 (en) | 2002-02-15 | 2007-03-13 | Oy Ajat Ltd | Radiation imaging device and system |
US7117588B2 (en) | 2002-04-23 | 2006-10-10 | Ge Medical Systems Global Technology Company, Llc | Method for assembling tiled detectors for ionizing radiation based image detection |
US6909100B2 (en) | 2002-07-25 | 2005-06-21 | Ii-Vi Incorporated | Radiation detector assembly |
CN100561755C (zh) * | 2004-03-12 | 2009-11-18 | 京半导体股份有限公司 | 叠层型太阳能电池 |
WO2008003351A1 (en) * | 2006-07-04 | 2008-01-10 | Mario Caria | Imaging system with tiled sensor chips having partially overlapping active areas |
US8835748B2 (en) * | 2009-01-06 | 2014-09-16 | Sunlight Photonics Inc. | Multi-junction PV module |
CN102356470B (zh) * | 2009-03-18 | 2014-07-02 | 三菱电机株式会社 | 光电转换装置 |
US8117741B2 (en) * | 2009-04-07 | 2012-02-21 | Oy Ajat Ltd | Method for manufacturing a radiation imaging panel comprising imaging tiles |
KR20130133748A (ko) * | 2010-06-17 | 2013-12-09 | 모사이드 테크놀로지스 인코퍼레이티드 | 관통 실리콘 비아를 갖는 반도체 디바이스 |
US8866281B2 (en) * | 2012-07-19 | 2014-10-21 | Nanya Technology Corporation | Three-dimensional integrated circuits and fabrication thereof |
-
2011
- 2011-10-06 FI FI20115982A patent/FI124818B/fi active IP Right Grant
-
2012
- 2012-09-14 EP EP12772889.7A patent/EP2764552B1/en active Active
- 2012-09-14 US US14/350,137 patent/US8928155B2/en not_active Expired - Fee Related
- 2012-09-14 WO PCT/EP2012/068113 patent/WO2013050229A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
FI124818B (fi) | 2015-02-13 |
EP2764552A1 (en) | 2014-08-13 |
WO2013050229A1 (en) | 2013-04-11 |
FI20115982A0 (fi) | 2011-10-06 |
US20140284752A1 (en) | 2014-09-25 |
US8928155B2 (en) | 2015-01-06 |
EP2764552B1 (en) | 2019-11-13 |
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PC | Transfer of assignment of patent |
Owner name: ADVACAM OY |
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