FI20095627A - Valoa emittoiva puolijohdelaite ja valmistusmenetelmä - Google Patents

Valoa emittoiva puolijohdelaite ja valmistusmenetelmä Download PDF

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Publication number
FI20095627A
FI20095627A FI20095627A FI20095627A FI20095627A FI 20095627 A FI20095627 A FI 20095627A FI 20095627 A FI20095627 A FI 20095627A FI 20095627 A FI20095627 A FI 20095627A FI 20095627 A FI20095627 A FI 20095627A
Authority
FI
Finland
Prior art keywords
manufacturing
light emitting
semiconductor device
emitting semiconductor
light
Prior art date
Application number
FI20095627A
Other languages
English (en)
Swedish (sv)
Other versions
FI122622B (fi
FI20095627A0 (fi
Inventor
Vladislav E Bougrov
Maxim A Odnoblyudov
Mikael Mulot
Original Assignee
Optogan Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optogan Oy filed Critical Optogan Oy
Publication of FI20095627A0 publication Critical patent/FI20095627A0/fi
Priority to FI20095627A priority Critical patent/FI122622B/fi
Priority to PCT/FI2010/050454 priority patent/WO2010139860A1/en
Priority to KR1020117030326A priority patent/KR20120030430A/ko
Priority to CN2010800247358A priority patent/CN102460743A/zh
Priority to TW099117868A priority patent/TW201110419A/zh
Priority to JP2012513647A priority patent/JP2012529170A/ja
Priority to EP10783033A priority patent/EP2438628A1/en
Priority to RU2011144445/28A priority patent/RU2011144445A/ru
Publication of FI20095627A publication Critical patent/FI20095627A/fi
Application granted granted Critical
Publication of FI122622B publication Critical patent/FI122622B/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
FI20095627A 2009-06-05 2009-06-05 Valoa emittoiva puolijohdelaite ja valmistusmenetelmä FI122622B (fi)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FI20095627A FI122622B (fi) 2009-06-05 2009-06-05 Valoa emittoiva puolijohdelaite ja valmistusmenetelmä
TW099117868A TW201110419A (en) 2009-06-05 2010-06-03 Light emitting semiconductor device and method for manufacturing
KR1020117030326A KR20120030430A (ko) 2009-06-05 2010-06-03 발광 반도체 디바이스 및 제조방법
CN2010800247358A CN102460743A (zh) 2009-06-05 2010-06-03 发光半导体器件及其制造方法
PCT/FI2010/050454 WO2010139860A1 (en) 2009-06-05 2010-06-03 Light emitting semiconductor device and method for manufacturing
JP2012513647A JP2012529170A (ja) 2009-06-05 2010-06-03 発光半導体装置及び製造方法
EP10783033A EP2438628A1 (en) 2009-06-05 2010-06-03 Light emitting semiconductor device and method for manufacturing
RU2011144445/28A RU2011144445A (ru) 2009-06-05 2010-06-03 Светоизлучающее полупроводниковое устройство и способ его изготовления

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20095627 2009-06-05
FI20095627A FI122622B (fi) 2009-06-05 2009-06-05 Valoa emittoiva puolijohdelaite ja valmistusmenetelmä

Publications (3)

Publication Number Publication Date
FI20095627A0 FI20095627A0 (fi) 2009-06-05
FI20095627A true FI20095627A (fi) 2010-12-06
FI122622B FI122622B (fi) 2012-04-30

Family

ID=40825331

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20095627A FI122622B (fi) 2009-06-05 2009-06-05 Valoa emittoiva puolijohdelaite ja valmistusmenetelmä

Country Status (8)

Country Link
EP (1) EP2438628A1 (fi)
JP (1) JP2012529170A (fi)
KR (1) KR20120030430A (fi)
CN (1) CN102460743A (fi)
FI (1) FI122622B (fi)
RU (1) RU2011144445A (fi)
TW (1) TW201110419A (fi)
WO (1) WO2010139860A1 (fi)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102637790A (zh) * 2012-05-03 2012-08-15 杭州士兰明芯科技有限公司 一种led芯片及其相应的制作方法
CN103117343B (zh) * 2013-02-05 2016-06-15 海迪科（南通）光电科技有限公司 具有反射镜结构的led发光器件及其制备方法
RU2530487C1 (ru) * 2013-06-04 2014-10-10 Федеральное государственное бюджетное учреждение науки "Научно-технологический центр микроэлектроники и субмикронных гетероструктур Российской академии наук" Способ изготовления нитридного светоизлучающего диода
CN105280666A (zh) * 2015-11-18 2016-01-27 海迪科（南通）光电科技有限公司 一种集成阵列式汽车大灯led芯片
CN105280777B (zh) * 2015-11-25 2018-03-13 湘能华磊光电股份有限公司 Led芯片及制备方法
US11600656B2 (en) 2020-12-14 2023-03-07 Lumileds Llc Light emitting diode device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW437104B (en) * 1999-05-25 2001-05-28 Wang Tien Yang Semiconductor light-emitting device and method for manufacturing the same
TWI322461B (en) * 2004-08-30 2010-03-21 Prime View Int Co Ltd Method of fabricating poly-crystal ito thin film and poly-crystal ito electrode
CN101218687B (zh) * 2005-07-05 2012-07-04 昭和电工株式会社 发光二极管及其制造方法
US20070018182A1 (en) * 2005-07-20 2007-01-25 Goldeneye, Inc. Light emitting diodes with improved light extraction and reflectivity
KR100661711B1 (ko) * 2005-08-30 2006-12-26 엘지이노텍 주식회사 반사 전극을 구비한 질화물 반도체 발광소자 및 그 제조방법
JP5016831B2 (ja) * 2006-03-17 2012-09-05 キヤノン株式会社 酸化物半導体薄膜トランジスタを用いた発光素子及びこれを用いた画像表示装置
GB2447091B8 (en) * 2007-03-02 2010-01-13 Photonstar Led Ltd Vertical light emitting diodes

Also Published As

Publication number Publication date
TW201110419A (en) 2011-03-16
KR20120030430A (ko) 2012-03-28
JP2012529170A (ja) 2012-11-15
CN102460743A (zh) 2012-05-16
WO2010139860A1 (en) 2010-12-09
RU2011144445A (ru) 2013-07-20
FI122622B (fi) 2012-04-30
EP2438628A1 (en) 2012-04-11
FI20095627A0 (fi) 2009-06-05

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