ES8601580A1 - Un dispositivo semiconductor para producir radiacion electromagnetica en la zona activa semiconductora en forma de capa - Google Patents

Un dispositivo semiconductor para producir radiacion electromagnetica en la zona activa semiconductora en forma de capa

Info

Publication number
ES8601580A1
ES8601580A1 ES537758A ES537758A ES8601580A1 ES 8601580 A1 ES8601580 A1 ES 8601580A1 ES 537758 A ES537758 A ES 537758A ES 537758 A ES537758 A ES 537758A ES 8601580 A1 ES8601580 A1 ES 8601580A1
Authority
ES
Spain
Prior art keywords
semiconductor laser
lateral injection
active layers
degenerate
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES537758A
Other languages
English (en)
Other versions
ES537758A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES8601580A1 publication Critical patent/ES8601580A1/es
Publication of ES537758A0 publication Critical patent/ES537758A0/es
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Geometry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

DISPOSITIVO SEMICONDUCTOR PARA PRODUCIR RADIACION ELECTROMAGNETICA EN UNA REGION SEMICONDUCTORA ACTIVA EN FORMA DE CAPAS. EN UN LASER DE SEMICONDUCTORES SE INCREMENTA LA EFICACIA MEDIANTE INYECCION LATERAL. CON ESTE FIN LA REGION ACTIVA (3) ESTA COMPUESTA DE CAPAS ACTIVAS (4) Y CAPAS DE BARRERA (5) LIMITADAS LATERALMENTE POR ZONAS SEMICONDUCTORAS (6 7) PREFERIBLEMENTE DEGENERADAS LAS CUALES INYECTAN PORTADORES DE CARGAS EN LA DIRECCION LONGITUDINAL DE LAS CAPAS ACTIVAS. LA INVERSION DE POBLACION DE LAS CAPAS ACTIVAS SE INCREMENTA ADEMAS PORQUE OCURRE LA SUPERINYECCION EN LA TRANSICION CON LAS ZONAS DEGENERADAS (6 7).
ES537758A 1983-11-22 1984-11-19 Un dispositivo semiconductor para producir radiacion electromagnetica en la zona activa semiconductora en forma de capa Granted ES537758A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8304008A NL8304008A (nl) 1983-11-22 1983-11-22 Halfgeleiderinrichting voor het opwekken van elektro-magnetische straling.

Publications (2)

Publication Number Publication Date
ES8601580A1 true ES8601580A1 (es) 1985-10-16
ES537758A0 ES537758A0 (es) 1985-10-16

Family

ID=19842752

Family Applications (1)

Application Number Title Priority Date Filing Date
ES537758A Granted ES537758A0 (es) 1983-11-22 1984-11-19 Un dispositivo semiconductor para producir radiacion electromagnetica en la zona activa semiconductora en forma de capa

Country Status (10)

Country Link
US (1) US4644553A (es)
JP (1) JPS60192381A (es)
AU (1) AU3537484A (es)
CA (1) CA1241421A (es)
DE (1) DE3441201A1 (es)
ES (1) ES537758A0 (es)
FR (1) FR2555370A1 (es)
GB (1) GB2150350B (es)
IT (1) IT1177256B (es)
NL (1) NL8304008A (es)

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JPS61190980A (ja) * 1985-02-19 1986-08-25 Canon Inc 半導体装置
JPS61244086A (ja) * 1985-04-22 1986-10-30 Sharp Corp 半導体レ−ザ素子
US4881235A (en) * 1985-07-26 1989-11-14 Hitachi, Ltd. Semiconductor laser having a multiple quantum well structure doped with impurities
JPS6267890A (ja) * 1985-09-20 1987-03-27 Hitachi Ltd 半導体レ−ザ
JPS62188295A (ja) * 1986-02-13 1987-08-17 Sharp Corp 半導体レ−ザ素子
US4941025A (en) * 1987-12-30 1990-07-10 Bell Communications Research, Inc. Quantum well semiconductor structures for infrared and submillimeter light sources
JPH0775265B2 (ja) * 1988-02-02 1995-08-09 三菱電機株式会社 半導体レーザおよびその製造方法
US5045894A (en) * 1988-06-29 1991-09-03 Hitachi, Ltd. Compound semiconductor light emitting device
US5003548A (en) * 1988-09-21 1991-03-26 Cornell Research Foundation, Inc. High power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (λ-658 nm) laser
EP0360011B1 (de) * 1988-09-22 1994-02-16 Siemens Aktiengesellschaft Abstimmbarer DFB-Laser
US4901327A (en) * 1988-10-24 1990-02-13 General Dynamics Corporation, Electronics Division Transverse injection surface emitting laser
US4943970A (en) * 1988-10-24 1990-07-24 General Dynamics Corporation, Electronics Division Surface emitting laser
US4873696A (en) * 1988-10-31 1989-10-10 The Regents Of The University Of California Surface-emitting lasers with periodic gain and a parallel driven nipi structure
US4933302A (en) * 1989-04-19 1990-06-12 International Business Machines Corporation Formation of laser mirror facets and integration of optoelectronics
US5075743A (en) * 1989-06-06 1991-12-24 Cornell Research Foundation, Inc. Quantum well optical device on silicon
US4965806A (en) * 1989-06-15 1990-10-23 The United States Of America As Represented By The United States Department Of Energy Semiconductor laser devices having lateral refractive index tailoring
JPH03151684A (ja) * 1989-11-08 1991-06-27 Mitsubishi Electric Corp 多波長集積化半導体レーザの製造方法
JPH03208388A (ja) * 1990-01-09 1991-09-11 Nec Corp 半導体レーザ及びその製造方法と不純物拡散方法
US5079774A (en) * 1990-12-27 1992-01-07 International Business Machines Corporation Polarization-tunable optoelectronic devices
US6528829B1 (en) * 1999-03-25 2003-03-04 Trw Inc. Integrated circuit structure having a charge injection barrier
US7535031B2 (en) * 2005-09-13 2009-05-19 Philips Lumiled Lighting, Co. Llc Semiconductor light emitting device with lateral current injection in the light emitting region
TW200737626A (en) * 2005-11-14 2007-10-01 Applied Materials Inc Semiconductor device having a laterally injected active region
US8421057B2 (en) * 2010-06-25 2013-04-16 Invenlux Corporation Light-emitting devices with improved active-region
JP6244667B2 (ja) * 2013-05-31 2017-12-13 住友電気工業株式会社 量子カスケードレーザ
JP6244668B2 (ja) * 2013-05-31 2017-12-13 住友電気工業株式会社 量子カスケードレーザ
DE102015104665A1 (de) 2015-03-26 2016-09-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
DE102016208717B4 (de) * 2016-05-20 2022-03-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit erhöhter Effizienz und Verfahren zur Herstellung eines Bauelements
CN106253055B (zh) * 2016-08-26 2019-08-20 武汉光迅科技股份有限公司 一种基于侧向p-i-n结构的电吸收激光器及其制造方法
US10355453B2 (en) * 2017-11-08 2019-07-16 International Business Machines Corporation Electro-optical device with lateral electron blocking layer
JP6947113B2 (ja) * 2018-04-23 2021-10-13 日本電信電話株式会社 半導体光素子
CA3179454A1 (en) 2020-05-19 2021-11-25 Benjamin Leung Quantum well-based led structure enhanced with sidewall hole injection

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3983509A (en) * 1975-04-25 1976-09-28 Xerox Corporation Distributed feedback diode laser
US4365260A (en) * 1978-10-13 1982-12-21 University Of Illinois Foundation Semiconductor light emitting device with quantum well active region of indirect bandgap semiconductor material
JPS57176785A (en) * 1981-04-22 1982-10-30 Hitachi Ltd Semiconductor laser device
EP0067586B1 (en) * 1981-06-11 1988-09-07 Honeywell Inc. Electro-optic element and method of making the same
JPS58225680A (ja) * 1982-06-23 1983-12-27 Nec Corp 半導体レ−ザ
JPS5923584A (ja) * 1982-07-29 1984-02-07 Nec Corp 半導体レ−ザ
JPS5929484A (ja) * 1982-08-12 1984-02-16 Fujitsu Ltd 半導体発光装置

Also Published As

Publication number Publication date
GB8429171D0 (en) 1984-12-27
CA1241421A (en) 1988-08-30
IT1177256B (it) 1987-08-26
FR2555370A1 (fr) 1985-05-24
DE3441201A1 (de) 1985-05-30
IT8423650A1 (it) 1986-05-19
JPS60192381A (ja) 1985-09-30
GB2150350A (en) 1985-06-26
US4644553A (en) 1987-02-17
AU3537484A (en) 1986-09-11
ES537758A0 (es) 1985-10-16
NL8304008A (nl) 1985-06-17
IT8423650A0 (it) 1984-11-19
GB2150350B (en) 1987-07-08

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